TN5335K1-G

N-channel Silicon Power MOSFET with 350V rating and 0.11A current in SOT-23 package
3,778 Effective Inventory

TN5335K1-G

Effective Inventory3,778

N-channel Silicon Power MOSFET with 350V rating and 0.11A current in SOT-23 package

  • Manufacturer Part # : TN5335K1-G

  • Package/Case: SOT23-3

  • Brand: Microchip

  • Product Categories : Single FETs, MOSFETs

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Service & Packaging

Service & Packaging

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TN5335K1-G DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.566 $0.57
10 $0.472 $4.72
30 $0.423 $12.69
100 $0.377 $37.70
500 $0.349 $174.50
1000 $0.333 $333.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for TN5335K1-G or email to us: Email: [email protected], we will contact you in 12 hours.

Details

With a focus on high breakdown voltage, low input capacitance, and fast switching speeds, the TN5335K1-G transistor is able to meet the demanding requirements of a wide range of applications. Its vertical DMOS design sets it apart from traditional transistors, offering superior performance and efficiency. Whether used for amplification or as a switch, this transistor delivers consistent results and reliable operation. Its low threshold voltage makes it an ideal choice for applications where precision control is essential, while its high input impedance ensures minimal power loss and maximum efficiency

Key Features

    • Sophisticated power management
    • Efficient energy harvesting
    • Durable component selection
    • Rugged environmental tolerance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 350 V
Id - Continuous Drain Current 110 mA Rds On - Drain-Source Resistance 15 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 600 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 150 C
Pd - Power Dissipation 360 mW Channel Mode Enhancement
Brand Microchip Technology Configuration Single
Fall Time 25 ns Forward Transconductance - Min 125 mS
Height 0.95 mm Length 2.9 mm
Product MOSFET Small Signals Product Type ! MOSFET
Rise Time ! 15 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type FET Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 20 ns Width 1.3 mm
Unit Weight 0.000282 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification TN5335K1-G PDF Download

FAQs

What is TN5335K1-G?

The TN5335K1-G is a high-frequency NPN bipolar junction transistor (BJT) designed by STMicroelectronics. It is ideal for use in high-frequency amplifier and oscillator circuits, and other applications requiring high-speed switching and amplification.

How Does TN5335K1-G Work?

The TN5335K1-G operates as a high-frequency NPN BJT, capable of amplifying and switching signals at high speeds. It is designed to provide high gain and low noise performance, making it suitable for use in RF (radio frequency) applications and other high-speed electronic circuits.

How Many Pins does TN5335K1-G have and What are the Functions of the Pinout Configuration?

The TN5335K1-G is housed in a SMD (Surface Mount Device) TO-92 package. The pinout configuration includes:

  • Emitter (E): The emitter terminal of the transistor.
  • Base (B): The base terminal, which controls the transistor's action.
  • Collector (C): The collector terminal, where the amplified or switched current exits.

What are the Pros and Cons of TN5335K1-G?

Pros:

  • High-Frequency Operation: Suitable for high-speed RF and amplifier applications.
  • High Gain: Provides high voltage and current gain, contributing to signal amplification.
  • Compact Package: The SMD TO-92 package is space-efficient and suitable for compact designs.
  • Reliable Manufacturer: Manufactured by STMicroelectronics, a reputable semiconductor company.

Cons:

  • Heat Dissipation: May require additional thermal management in high-power applications.
  • Complex Biasing: Requires careful biasing and impedance matching for optimal performance in high-frequency circuits.

Are There Any Equivalents/Alternatives to TN5335K1-G for Recommendation?

  • Equivalents to the TN5335K1-G include the 2N2369A from Central Semiconductor and the PN2369A from Fairchild Semiconductor.
  • Alternatives to the TN5335K1-G include the MPSH10 from ON Semiconductor and the 2N5179 from Microsemi Corporation.

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