UF3SC065030B7S
650V/30mΩ SiCFET (Silicon Carbide Field-Effect Transistor) with G3 enhancement, packaged in TO263-7UF3SC065030B7S
650V/30mΩ SiCFET (Silicon Carbide Field-Effect Transistor) with G3 enhancement, packaged in TO263-7
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Manufacturer Part # : UF3SC065030B7S
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Package/Case: TO-263-8,D2PAK(7Leads+Tab),TO-263CA
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Part Status : ACTIVE
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Brand: Qorvo
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Product Categories : Single FETs, MOSFETs
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RoHS:
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Service & Packaging
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Initiate the application within 90 days from the shipment date.
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UF3SC065030B7S DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
UF3SC065030B7S is a high-performance electronic component, specifically categorized as a 650V/30MOHM SiC (Silicon Carbide) stacked fast C (capable of fast switching) device. The 650V rating indicates its ability to handle high voltages, making it suitable for various power electronics applications. The 30MOHM specifies the component's low on-state resistance, which helps minimize power losses and improve efficiency in circuits where it is used. The SiC material used in this component provides several advantages over traditional silicon-based components, including higher temperature tolerance, faster switching speeds, and lower switching losses. This makes UF3SC065030B7S ideal for applications requiring high efficiency and reliability, such as electric vehicles, renewable energy systems, and power supplies. The stacked fast C designation indicates that this component is designed for fast switching applications, enabling quick response times and precise control in dynamic systems.
Key Features
- Manufacturer: UnitedSiC
- Series: UF3SC
- Module Type: SiC Schottky Diode
- Repetitive Reverse Voltage: 650V
- Forward Current: 30A
- Package: D2PAK-3
- Fast switching speed
- High power efficiency
Application
- The UF3SC065030B7S is commonly used in aerospace and defense applications due to its high reliability and performance in harsh environments
- It is also used in industrial automation systems for control and communication purposes
- The UF3SC065030B7S can be found in medical devices for data processing and monitoring functions
- It is utilized in transportation systems for real-time data processing and communication
- The UF3SC065030B7S is also used in telecommunications systems for network and infrastructure management
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | FET Type | N-Channel |
Technology | SiCFET (Cascode SiCJFET) | Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 62A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 12V |
Rds On (Max) @ Id, Vgs | 35mOhm @ 40A, 12V | Vgs(th) (Max) @ Id | 6V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V | Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V | Power Dissipation (Max) | 214W (Tc) |
Operating Temperature ! | 175°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | D2PAK-7 | Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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