UPA1763G-E2-A

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UPA1763G-E2-A: Automotive Power MOSFETs in SOP Configuration

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Quality Assurance

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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UPA1763G-E2-A DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for UPA1763G-E2-A or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters.FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 mΩ MAX. (VGS = 4.0 V, ID = 2.3 A) • Low input capacitance Ciss = 870 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8)

Key Features

  • Dual chip type
  • Low on-resistance
  • RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A)
  • RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A)
  • RDS(on)3 = 66.0 mΩ MAX. (VGS = 4.0 V, ID = 2.3 A)
  • Low input capacitance
  • Ciss = 870 pF TYP.
  • Built-in G-S protection diode
  • Small and surface mount package (Power SOP8)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Part Package Code SOP
Pin Count ! 8 Reach Compliance Code compliant
ECCN Code 5A002 Drain Current-Max (Abs) (ID) 4.5 A
Drain Current-Max (ID) 4.5 A FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e6 Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 2 W
Surface Mount ! YES Terminal Finish TIN BISMUTH

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification UPA1763G-E2-A PDF Download

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