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Specification Comparison: CSD19535KTTT vs CSD19536KTTT vs CSD19534KCS
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| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | TO263-3 | D2PAK-3 | TO-220-3 |
| Description | MOSFET 100V N-Channel NexFET Power MOSFET | DDPAK N-channel Silicon Transistor with 100V 200A rating | 100-V, N channel NexFET™ power MOSFET, single TO-220, 16.5 mOhm 3-TO-220 -55 to 175 |
| Stock | 6635 | 6681 | 6558 |
| Configuration | Single | Single | SINGLE WITH BUILT-IN DIODE |
| VDS (V) | 100 | ||
| Rds(on) at VGS=10 V (max) (mΩ) | 3.4 | ||
| IDM - pulsed drain current (max) (A) | 400 | ||
| QG (typ) (nC) | 75 | ||
| QGD (typ) (nC) | 11 | ||
| QGS (typ) (nC) | 25 | ||
| VGS (V) | 20 | ||
| VGSTH typ (typ) (V) | 2.7 | ||
| ID - silicon limited at TC=25°C (A) | 197 | ||
| ID - package limited (A) | 200 | ||
| Logic level | No | ||
| Operating temperature range (°C) | -55 to 175 | ||
| Rating | Catalog | ||
| Product Category | MOSFET | ||
| RoHS | Details | ||
| REACH | Details | ||
| Technology | Si | ||
| Mounting Style | SMD/SMT | ||
| Package / Case | D2PAK-3 (TO-263-3) | ||
| Transistor Polarity | N-Channel | ||
| Number of Channels | 1 Channel | ||
| Vds - Drain-Source Breakdown Voltage | 100 V | ||
| Id - Continuous Drain Current | 272 A | ||
| Rds On - Drain-Source Resistance | 2.4 mOhms | ||
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | ||
| Vgs th - Gate-Source Threshold Voltage | 2.1 V | ||
| Qg - Gate Charge | 118 nC | ||
| Minimum Operating Temperature | - 55 C | ||
| Maximum Operating Temperature | + 175 C | ||
| Pd - Power Dissipation | 375 W | ||
| Channel Mode | Enhancement | ||
| Tradename | NexFET | ||
| Series | CSD19536KTT | ||
| Brand | Texas Instruments | ||
| Fall Time | 6 ns | ||
| Forward Transconductance - Min | 329 S | ||
| Height | 4.7 mm | ||
| Length | 9.25 mm | ||
| Moisture Sensitive | Yes | ||
| Product Type | MOSFET | ||
| Rise Time | 8 ns | ||
| Factory Pack Quantity | 50 | ||
| Subcategory | MOSFETs | ||
| Transistor Type | 1 N-Channel | ||
| Typical Turn-Off Delay Time | 32 ns | ||
| Typical Turn-On Delay Time | 13 ns | ||
| Width | 10.26 mm | ||
| Unit Weight | 0.068654 oz | ||
| Pbfree Code | Yes | ||
| Rohs Code | No | ||
| Part Life Cycle Code | Active | ||
| Reach Compliance Code | not_compliant | ||
| ECCN Code | EAR99 | ||
| HTS Code | 8541.29.00.95 | ||
| Additional Feature | AVALANCHE RATED | ||
| Avalanche Energy Rating (Eas) | 54 mJ | ||
| Case Connection | DRAIN | ||
| DS Breakdown Voltage-Min | 100 V | ||
| Drain Current-Max (ID) | 100 A | ||
| Drain-source On Resistance-Max | 0.02 Ω | ||
| FET Technology | METAL-OXIDE SEMICONDUCTOR | ||
| Feedback Cap-Max (Crss) | 7.4 pF | ||
| JEDEC-95 Code | TO-220 | ||
| JESD-30 Code | R-PSFM-T3 | ||
| JESD-609 Code | e3 | ||
| Number of Elements | 1 | ||
| Number of Terminals | 3 | ||
| Operating Mode | ENHANCEMENT MODE | ||
| Operating Temperature-Max | 175 °C | ||
| Operating Temperature-Min | -55 °C | ||
| Package Body Material | PLASTIC/EPOXY | ||
| Package Shape | RECTANGULAR | ||
| Package Style | FLANGE MOUNT | ||
| Polarity/Channel Type | N-CHANNEL | ||
| Pulsed Drain Current-Max (IDM) | 138 A | ||
| Surface Mount | NO | ||
| Terminal Finish | MATTE TIN | ||
| Terminal Form | THROUGH-HOLE | ||
| Terminal Position | SINGLE | ||
| Transistor Application | SWITCHING | ||
| Transistor Element Material | SILICON |
Part Number
Start with: CSD19
Part Number "CSD19" returned 20 results; all results matched and started with "CSD19".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| CSD19532KTT |
4-Pin(3+Tab) Double DPAK N-Channel Silicon Transistor MOSFET 100V 200A Bulk |
Texas Instruments | TO-263 (KTT)-3 | 3~7 Days | 7,096.00 | ||
| CSD19538Q2T |
Transistor Metal-Oxide-Semiconductor Field-Effect Si N-Channel 100V 14.4A 6-Pin Package WSON EP Tape and Reel |
Texas Instruments | (DQK) | 6 | ACTIVE | 3~7 Days | 7,779.00 | |
| CSD19502Q5B |
Space-Saving SON Package for High-Power Electronic Device |
Texas Instruments | VSON-CLIP (DNK)-8 | 3~7 Days | 7,981.00 | ||
| CSD19537Q3T |
MOSFET 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150 |
Texas Instruments | VSONCLIP-8 | ACTIVE | 3~7 Days | 7,606.00 | |
| CSD19532KTTT |
MOSFET 100V, N-channel NexFET Pwr MOSFET |
Texas Instruments | DDPAK/TO-263-3 | ACTIVE | 3~7 Days | 5,532.00 | |
| CSD19506KTT |
80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm 3-DDPAK/TO-263 -55 to 175 |
Texas Instruments | DDPAK/TO-263-3 | 3~7 Days | 6,422.00 | ||
| CSD19538Q3AT |
MOSFET 100-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150 |
Texas Instruments | (DNH) | 8 | ACTIVE | 3~7 Days | 4,678.00 | |
| CSD19532Q5B |
Silicon Power FET with 17A Drain Current, 100V Voltage Rating, 0.0057 Ohm On-Resistance |
texas instruments | WSON-8 | 3~7 Days | 6,024.00 | ||
| CSD19534Q5AT |
Tape and Reel Packaged N-Channel Si MOSFET |
Texas Instruments | VSONP-8 | ACTIVE | 3~7 Days | 3,980.00 | |
| CSD19531Q5AT |
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150 |
Texas Instruments | (DQJ) | 8 | 3~7 Days | 6,001.00 | ||
| CSD19531KCS |
100-V, N channel NexFET™ power MOSFET, single TO-220, 7.7 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 3,178.00 | ||
| CSD19503KCS |
80-V, N channel NexFET™ power MOSFET, single TO-220, 9.2 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 3,394.00 | ||
| CSD19533KCS |
100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 7,173.00 | ||
| CSD19506KCS |
80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 4,323.00 | ||
| CSD19501KCS |
80-V, N channel NexFET™ power MOSFET, single TO-220, 6.6 mOhm 3-TO-220 -55 to 175 |
Texas Instruments | TO-220-3 | 3~7 Days | 6,067.00 | ||
| CSD19531Q5A |
MOSFET 100V 5.3mOhm Pwr MOSFET |
Texas Instruments | VSONP-8 | 3~7 Days | 5,547.00 | ||
| CSD19532Q5BT |
VSON-8-EP(5x6) MOSFETs ROHS, identified by its product code CSD19532Q5BT, showcases high performance within its compact form factor |
Texas Instruments | VSON-CLIP-8 | ACTIVE | 3~7 Days | 7,788.00 | |
| CSD19502Q5BT |
MOSFET N-Channel, 3.4mOhm 80V |
Texas Instruments | VSONCLIP-8 | 3~7 Days | 4,567.00 | ||
| CSD19533Q5A |
MOSFET 100V 7.8mOhm N-CH Pwr MOSFET |
Texas Instruments | TDFN-8 | 3~7 Days | 6,252.00 | ||
| CSD19535KTT |
N-MOSFET Transistor |
Texas Instruments | DDPAK | 3~7 Days | 5,345.00 |