Specification Comparison: IRF5810 vs IRF540 vs IRF510
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Part Number
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Manufacturer | INFINEON | Onsemi | Onsemi |
Package | TSOP6 | TO-220-3 | TO-220-3 |
Description | The IRF5810 is a TSOP-6 packaged device that falls under the MO-193AA classification, featuring a 2.9A I(D) rating and 20V operation | Robust N-channel device for reliable power control applications | High-power N-channel MOSFET for amplifier applications |
Stock | 7036 | 7720 | 6679 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Single | Single |
Product Category | MOSFET | MOSFET | |
Technology | Si | Si | |
Mounting Style | Through Hole | Through Hole | |
Package / Case | TO-220-3 | TO-220-3 | |
Transistor Polarity | N-Channel | N-Channel | |
Number of Channels | 1 Channel | 1 Channel | |
Vds - Drain-Source Breakdown Voltage | 100 V | 100 V | |
Id - Continuous Drain Current | 28 A | 5.6 A | |
Rds On - Drain-Source Resistance | 77 mOhms | 540 mOhms | |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | - 20 V, + 20 V | |
Minimum Operating Temperature | - 55 C | - 55 C | |
Maximum Operating Temperature | + 175 C | + 175 C | |
Pd - Power Dissipation | 120 W | 43 W | |
Channel Mode | Enhancement | Enhancement | |
Series | IRF540 | IRF510 | |
Brand | onsemi / Fairchild | onsemi / Fairchild | |
Fall Time | 50 ns | 12 ns | |
Height | 16.3 mm | 16.3 mm | |
Length | 10.67 mm | 10.67 mm | |
Product Type | MOSFET | MOSFET | |
Rise Time | 70 ns | 25 ns | |
Subcategory | MOSFETs | MOSFETs | |
Transistor Type | 1 N-Channel | 1 N-Channel | |
Typical Turn-Off Delay Time | 40 ns | 15 ns | |
Typical Turn-On Delay Time | 15 ns | 8 ns | |
Width | 4.7 mm | 4.7 mm | |
Unit Weight | 0.068784 oz | 0.068784 oz | |
Rohs Code | No | ||
Part Life Cycle Code | Obsolete | ||
Reach Compliance Code | not_compliant | ||
ECCN Code | EAR99 | ||
DS Breakdown Voltage-Min | 20 V | ||
Drain Current-Max (Abs) (ID) | 2.9 A | ||
Drain Current-Max (ID) | 2.9 A | ||
Drain-source On Resistance-Max | 0.09 Ω | ||
FET Technology | METAL-OXIDE SEMICONDUCTOR | ||
JEDEC-95 Code | MO-193AA | ||
JESD-30 Code | R-PDSO-G6 | ||
JESD-609 Code | e0 | ||
Moisture Sensitivity Level | 2 | ||
Number of Elements | 2 | ||
Number of Terminals | 6 | ||
Operating Mode | ENHANCEMENT MODE | ||
Operating Temperature-Max | 150 °C | ||
Package Body Material | PLASTIC/EPOXY | ||
Package Shape | RECTANGULAR | ||
Package Style | SMALL OUTLINE | ||
Polarity/Channel Type | P-CHANNEL | ||
Power Dissipation-Max (Abs) | 0.96 W | ||
Qualification Status | Not Qualified | ||
Surface Mount | YES | ||
Terminal Finish | TIN LEAD | ||
Terminal Form | GULL WING | ||
Terminal Position | DUAL | ||
Transistor Application | SWITCHING | ||
Transistor Element Material | SILICON |
Part Number
Start with: IRF58
Part Number "IRF58" returned 22 results; all results matched and started with "IRF58".
Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|---|
IRF5852TRPBF |
2.7A 20V Dual N-Channel MOSFET Transistor |
Infineon Technologies | SOP-6 | Discontinued | 3~7 Days | 5,569.00 | |
IRF5851 |
Mosfet Array with 20V and 2.7A Rating in Surface Mount 6-TSOP Package |
Infineon Technologies | TSOP-6 | 3~7 Days | 5,659.00 | ||
IRF5850TRPBF |
-20V rated MOSFET with dual P-channel configuration, ideal for high power applications |
INFINEON | TSOP-6 | Obsolete | 3~7 Days | 4,483.00 | |
IRF5800TRPBF |
P-Channel 30V 4A Surface Mount Transistor |
INFINEON | TSOP-6 | Discontinued | 3~7 Days | 6,323.00 | |
IRF5800TR |
P-Channel 30 V 4A Surface Mount Micro6 |
INFINEON | SOT163 | 3~7 Days | 6,384.00 | ||
IRF5805 |
Advanced surface-mount technology enables efficient thermal dissipation |
INFINEON | SOT-16 | 3~7 Days | 3,074.00 | ||
IRF5803D2TRPBF |
P-Channel Silicon Transistor, 40V, 3.4A, 8-Pin SOIC Package |
INFINEON | SOIC-8 | 3~7 Days | 3,702.00 | ||
IRF5851TRPBF |
Micro 6 package size |
Infineon Technologies | TSOP-6 | Discontinued | 3~7 Days | 5,414.00 | |
IRF5850 |
Learn more about IRF5850 - Mosfet Array 20V 2.2A 960mW Surface Mount 6-TSOP |
INFINEON | SOT-23 | Discontinued | 3~7 Days | 3,424.00 | |
IRF5800 |
30V 4A P-Channel Transistor in Micro6™ Package |
INFINEON | SOT-23 | 3~7 Days | 6,388.00 | ||
IRF5803 |
Power Field-Effect Transistor, 3.4A I(D), 40V, 0.112ohm |
INFINEON | TSOP-6 | 3~7 Days | 5,847.00 | ||
IRF5852 |
852 Dual N-channel MOSFET 2.7A 20V": |
Infineon Technologies | TSO-6 | Discontinued | 3~7 Days | 7,861.00 | |
IRF5802 |
Power FET IRF5802 with 0.9A current and 150V voltage rating |
INFINEON | SOT-23-6 Thin | 3~7 Days | 6,146.00 | ||
IRF5801 |
Power Field-Effect Transistor with 0.6A Drain Current, 200V Voltage Rating, N-Channel Configuration, and Silicon Metal-Oxide Semiconductor Technology |
INFINEON | SOT-16 | NRND | 3~7 Days | 4,334.00 | |
IRF5803PBF |
This IRFPBF device is well-suited for automotive |
IR | TSOP-6 | 3~7 Days | 3,376.00 | ||
IRF5805TRPBF |
Transistor Metal-Oxide-Semiconductor Field-Effect Transistor designed for low-voltage applications |
Infineon | TSOP6L | OBSOLETE | 3~7 Days | 8,094.00 | |
IRF5802TRPBF |
540mA current capacity at 5.5V with a 1.2 ohm resistance at 10V |
Infineon Technologies | TSOP-6 | ACTIVE | 3~7 Days | 8,224.00 | |
IRF5803TRPBF |
Single P-Channel MOSFET with a 40V voltage rating, 190 milliohm on-resistance, and 37 nanocoulombs gate charge in a TSOP-6 package |
Infineon Technologies | SOT23-6 | ACTIVE | 3~7 Days | 7,207.00 | |
IRF5810TRPBF |
-20V, 2.9A rating |
Infineon Technologies | TSOP-6 | OBSOLETE | 3~7 Days | 6,918.00 | |
IRF5850TR |
6-TSOP Mosfet Array with 20V 2.2A 960mW Surface Mount |
Infineon Technologies | SOT-6 | 3~7 Days | 6,781.00 | ||
IRF5803D2 |
0V P-Channel Surface Mount 8-SO 3.4A (Ta) 2W (Ta) |
Infineon Technologies | 8-SOIC(0.154",3.90mmWidth) | OBSOLETE | 3~7 Days | 9,440.00 | |
IRF5851PBF |
High-performance power electronic compone |
infineon | TSOP-6 | NRND | 3~7 Days | 9,299.00 |