Specification Comparison: IRF5810 vs IRF540 vs IRF510

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Part Number
Manufacturer INFINEON Onsemi Onsemi
Package TSOP6 TO-220-3 TO-220-3
Description The IRF5810 is a TSOP-6 packaged device that falls under the MO-193AA classification, featuring a 2.9A I(D) rating and 20V operation Robust N-channel device for reliable power control applications High-power N-channel MOSFET for amplifier applications
Stock 7036 7720 6679
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Single Single
Product Category MOSFET MOSFET
Technology Si Si
Mounting Style Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Transistor Polarity N-Channel N-Channel
Number of Channels 1 Channel 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Id - Continuous Drain Current 28 A 5.6 A
Rds On - Drain-Source Resistance 77 mOhms 540 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V - 20 V, + 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 120 W 43 W
Channel Mode Enhancement Enhancement
Series IRF540 IRF510
Brand onsemi / Fairchild onsemi / Fairchild
Fall Time 50 ns 12 ns
Height 16.3 mm 16.3 mm
Length 10.67 mm 10.67 mm
Product Type MOSFET MOSFET
Rise Time 70 ns 25 ns
Subcategory MOSFETs MOSFETs
Transistor Type 1 N-Channel 1 N-Channel
Typical Turn-Off Delay Time 40 ns 15 ns
Typical Turn-On Delay Time 15 ns 8 ns
Width 4.7 mm 4.7 mm
Unit Weight 0.068784 oz 0.068784 oz
Rohs Code No
Part Life Cycle Code Obsolete
Reach Compliance Code not_compliant
ECCN Code EAR99
DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 2.9 A
Drain Current-Max (ID) 2.9 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e0
Moisture Sensitivity Level 2
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.96 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
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Part Number

Start with: IRF58

Part Number "IRF58" returned 22 results; all results matched and started with "IRF58".

Part Number Description Brand Package/Case Lifecycle Status Cargo cycle In Stock Operation
IRF5852TRPBF

2.7A 20V Dual N-Channel MOSFET Transistor

Infineon Technologies SOP-6 Discontinued 3~7 Days 5,569.00
IRF5851

Mosfet Array with 20V and 2.7A Rating in Surface Mount 6-TSOP Package

Infineon Technologies TSOP-6 3~7 Days 5,659.00
IRF5850TRPBF

-20V rated MOSFET with dual P-channel configuration, ideal for high power applications

INFINEON TSOP-6 Obsolete 3~7 Days 4,483.00
IRF5800TRPBF

P-Channel 30V 4A Surface Mount Transistor

INFINEON TSOP-6 Discontinued 3~7 Days 6,323.00
IRF5800TR

P-Channel 30 V 4A Surface Mount Micro6

INFINEON SOT163 3~7 Days 6,384.00
IRF5805

Advanced surface-mount technology enables efficient thermal dissipation

INFINEON SOT-16 3~7 Days 3,074.00
IRF5803D2TRPBF

P-Channel Silicon Transistor, 40V, 3.4A, 8-Pin SOIC Package

INFINEON SOIC-8 3~7 Days 3,702.00
IRF5851TRPBF

Micro 6 package size

Infineon Technologies TSOP-6 Discontinued 3~7 Days 5,414.00
IRF5850

Learn more about IRF5850 - Mosfet Array 20V 2.2A 960mW Surface Mount 6-TSOP

INFINEON SOT-23 Discontinued 3~7 Days 3,424.00
IRF5800

30V 4A P-Channel Transistor in Micro6™ Package

INFINEON SOT-23 3~7 Days 6,388.00
IRF5803

Power Field-Effect Transistor, 3.4A I(D), 40V, 0.112ohm

INFINEON TSOP-6 3~7 Days 5,847.00
IRF5852

852 Dual N-channel MOSFET 2.7A 20V":

Infineon Technologies TSO-6 Discontinued 3~7 Days 7,861.00
IRF5802

Power FET IRF5802 with 0.9A current and 150V voltage rating

INFINEON SOT-23-6 Thin 3~7 Days 6,146.00
IRF5801

Power Field-Effect Transistor with 0.6A Drain Current, 200V Voltage Rating, N-Channel Configuration, and Silicon Metal-Oxide Semiconductor Technology

INFINEON SOT-16 NRND 3~7 Days 4,334.00
IRF5803PBF

This IRFPBF device is well-suited for automotive

IR TSOP-6 3~7 Days 3,376.00
IRF5805TRPBF

Transistor Metal-Oxide-Semiconductor Field-Effect Transistor designed for low-voltage applications

Infineon TSOP6L OBSOLETE 3~7 Days 8,094.00
IRF5802TRPBF

540mA current capacity at 5.5V with a 1.2 ohm resistance at 10V

Infineon Technologies TSOP-6 ACTIVE 3~7 Days 8,224.00
IRF5803TRPBF

Single P-Channel MOSFET with a 40V voltage rating, 190 milliohm on-resistance, and 37 nanocoulombs gate charge in a TSOP-6 package

Infineon Technologies SOT23-6 ACTIVE 3~7 Days 7,207.00
IRF5810TRPBF

-20V, 2.9A rating

Infineon Technologies TSOP-6 OBSOLETE 3~7 Days 6,918.00
IRF5850TR

6-TSOP Mosfet Array with 20V 2.2A 960mW Surface Mount

Infineon Technologies SOT-6 3~7 Days 6,781.00
IRF5803D2

0V P-Channel Surface Mount 8-SO 3.4A (Ta) 2W (Ta)

Infineon Technologies 8-SOIC(0.154",3.90mmWidth) OBSOLETE 3~7 Days 9,440.00
IRF5851PBF

High-performance power electronic compone

infineon TSOP-6 NRND 3~7 Days 9,299.00