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Specification Comparison: MT47H32M16HR-3 IT:F vs MT47H32M16HW-25EIT:G vs MT47H32M16HR-25E:G
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| Manufacturer | MICRON | Micron Technology | Micron Technology |
| Package | FBGA-84 | BGA | FBGA |
| Description | Exclusively for OEMs and CMs | Low voltage 1.8V operation | High-performance memory module for demanding computing applications, featuring M x DDR DRAM and a fast access time of n |
| Stock | 5078 | 4013 | 3668 |
| Product Category | IC Chips | DRAM | |
| Organization | 32Mx16 | 32MX16 | |
| Pin Count | 84 | 84 | |
| ECCN (US) | EAR99 | ||
| Part Status | Obsolete | ||
| Automotive | No | ||
| PPAP | No | ||
| DRAM Type | DDR2 SDRAM | ||
| Chip Density (bit) | 512M | ||
| Number of Internal Banks | 4 | ||
| Number of Words per Bank | 8M | ||
| Number of Bits/Word (bit) | 16 | ||
| Data Bus Width (bit) | 16 | ||
| Maximum Clock Rate (MHz) | 667 | ||
| Maximum Access Time (ns) | 0.45 | ||
| Address Bus Width (bit) | 15 | ||
| Process Technology | CMOS | ||
| Interface Type | SSTL_18 | ||
| Minimum Operating Supply Voltage (V) | 1.7 | ||
| Typical Operating Supply Voltage (V) | 1.8 | ||
| Maximum Operating Supply Voltage (V) | 1.9 | ||
| Operating Current (mA) | 250 | ||
| Minimum Operating Temperature (°C) | -40 | ||
| Maximum Operating Temperature (°C) | 85 | ||
| Supplier Temperature Grade | Industrial | ||
| Number of I/O Lines (bit) | 16 | ||
| Packaging | Tray | ||
| Mounting | Surface Mount | ||
| Package Height | 0.8 | ||
| Package Width | 8 | ||
| Package Length | 12.5 | ||
| PCB changed | 84 | ||
| Standard Package Name | BGA | ||
| Supplier Package | FBGA | ||
| Lead Shape | Ball | ||
| Pbfree Code | No | ||
| Rohs Code | No | ||
| Part Life Cycle Code | Obsolete | ||
| Ihs Manufacturer | MICRON TECHNOLOGY INC | ||
| Part Package Code | BGA | ||
| Package Description | 8 X 12.50 MM, FBGA-84 | ||
| Reach Compliance Code | not_compliant | ||
| ECCN Code | EAR99 | ||
| HTS Code | 8542.32.00.28 | ||
| Access Mode | FOUR BANK PAGE BURST | ||
| Access Time-Max | 0.4 ns | ||
| Additional Feature | AUTO/SELF REFRESH | ||
| Clock Frequency-Max (fCLK) | 400 MHz | ||
| I/O Type | COMMON | ||
| Interleaved Burst Length | 4,8 | ||
| JESD-30 Code | R-PBGA-B84 | ||
| JESD-609 Code | e0 | ||
| Length | 12.5 mm | ||
| Memory Density | 536870912 bit | ||
| Memory IC Type | DDR2 DRAM | ||
| Memory Width | 16 | ||
| Number of Functions | 1 | ||
| Number of Ports | 1 | ||
| Number of Terminals | 84 | ||
| Number of Words | 33554432 words | ||
| Number of Words Code | 32000000 | ||
| Operating Mode | SYNCHRONOUS | ||
| Operating Temperature-Max | 85 °C | ||
| Operating Temperature-Min | -40 °C | ||
| Output Characteristics | 3-STATE | ||
| Package Body Material | PLASTIC/EPOXY | ||
| Package Code | TFBGA | ||
| Package Equivalence Code | BGA84,9X15,32 | ||
| Package Shape | RECTANGULAR | ||
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | ||
| Peak Reflow Temperature (Cel) | 235 | ||
| Power Supplies | 1.8 V | ||
| Qualification Status | Not Qualified | ||
| Refresh Cycles | 8192 | ||
| Seated Height-Max | 1.2 mm | ||
| Self Refresh | YES | ||
| Sequential Burst Length | 4,8 | ||
| Standby Current-Max | 0.007 A | ||
| Supply Current-Max | 0.215 mA | ||
| Supply Voltage-Max (Vsup) | 1.9 V | ||
| Supply Voltage-Min (Vsup) | 1.7 V | ||
| Supply Voltage-Nom (Vsup) | 1.8 V | ||
| Surface Mount | YES | ||
| Technology | CMOS | ||
| Temperature Grade | INDUSTRIAL | ||
| Terminal Finish | Tin/Lead/Silver (Sn/Pb/Ag) | ||
| Terminal Form | BALL | ||
| Terminal Pitch | 0.8 mm | ||
| Terminal Position | BOTTOM | ||
| Time@Peak Reflow Temperature-Max (s) | 30 | ||
| Width | 8 mm | ||
| Series | MT47H | ||
| Brand | Micron | ||
| Product Type | DRAM | ||
| Subcategory | Memory & Data Storage |
Part Number
Start with: MT47H
Part Number "MT47H" returned 22 results; all results matched and started with "MT47H".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| MT47H128M8SH-25E IT:M |
IT:M MT47H128M8SH-25E DDR2 Memory Component |
Micron Technology | FBGA-60 | 3~7 Days | 4,353.00 | ||
| MT47H64M16HR-3 IT:H |
High-speed 1Gbit Memory Device with 450 ps Timing |
Micron Technology | FBGA-84 | 3~7 Days | 4,481.00 | ||
| MT47H128M16RT-25E |
High-performance DDR3 SDRAM chip for optimized data processing |
MICRON | FBGA84 | Active | 3~7 Days | 7,115.00 | |
| MT47H32M16NF-25EIT:H |
32 Meg x 16 DDR DRAM |
MICRON | FBGA84 | ACTIVE | 3~7 Days | 7,889.00 | |
| MT47H64M16HR-25:H |
400MHz operating frequency |
Micron Technology | FBGA-84 | 3~7 Days | 6,036.00 | ||
| MT47H64M16HR-3IT:H |
High-speed 1Gbit Memory Device with 450 ps Timing |
Micron Technology | TFBGA-84 | 3~7 Days | 5,098.00 | ||
| MT47H64M16HR-25E IT:H |
1Gbit DDR2 SDRAM Chip |
Micron Technology | FBGA-84 | OBSOLETE | 3~7 Days | 7,172.00 | |
| MT47H32M16HW-25E IT:G |
Low voltage 1.8V operation |
Micron Technology | TFBGA-84 | 3~7 Days | 5,948.00 | ||
| MT47H128M8CF-25E IT:H |
This DRAM chip is packaged in a 60-pin FBGA format, making it suitable for various electronic devices |
MICRON | BGA-60 | 3~7 Days | 7,163.00 | ||
| MT47H64M16HR-25E:H |
Advanced memory solution for data-intensive industries, featuring advanced error detection and correction |
Micron Technology | FBGA-84 | OBSOLETE | 3~7 Days | 5,429.00 | |
| MT47H32M16HR-25E IT:G |
IT:G Memory Technology 512Mbit DDR2 SDRAM Chip |
Micron Technology | TFBGA-84 | OBSOLETE | 3~7 Days | 7,765.00 | |
| MT47H128M16HG-3IT |
CMOS technology |
MICRON | FBGA | 3~7 Days | 7,138.00 | ||
| MT47H64M16HR-3:H |
DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R/Tray DRAM Chip |
Micron Technology | FBGA-84 | OBSOLETE | 3~7 Days | 3,883.00 | |
| MT47H128M16HG-3IT:A |
DDR2 SDRAM Chip |
Micron Technology | FBGA | OBSOLETE | 3~7 Days | 7,630.00 | |
| MT47H32M16HR-25E IT:G TR |
Synchronous dynamic random-access memory |
Micron Technology | FBGA | 3~7 Days | 7,849.00 | ||
| MT47H64M16HR-3IT |
Advanced Integrated Circuit, offering 1 gigabit capacity for parallel data processing |
Micron | FBGA-84 | 3~7 Days | 4,403.00 | ||
| MT47H32M16NF-25E IT:H |
32 Meg x 16 DDR DRAM |
Micron Technology | FBGA-84 | 3~7 Days | 7,667.00 | ||
| MT47H128M16RT-25E:C |
Storage conditions: -25 to 85 degrees |
Micron Technology | FBGA-84 | ACTIVE | 3~7 Days | 6,169.00 | |
| MT47H32M16NF-25E AIT:H |
Advanced Interconnect Technology for High-speed Computing |
MICRON | 84-TFBGA | OBSOLETE | 3~7 Days | 7,510.00 | |
| MT47H64M16NF-25E AIT:M |
The MT47H64M16NF-25E AIT:M offers fast data transfer rates and reliable performance." |
Micron Technology | FBGA-84 | Active | 3~7 Days | 7,760.00 | |
| MT47H128M8CF-25:H |
PBGA60-packaged DDR DRAM chip with 128MX8 configuration, 0.4ns access time, CMOS technology integration |
Micron Technology | TFBGA-60 | 3~7 Days | 6,982.00 | ||
| MT47H64M16HR-3 IT:G |
84-Pin FBGA Tray Mount DRAM Chip for DDR2 SDRAM |
MICRON | FBGA84 | 3~7 Days | 4,092.00 |