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FBGA-78 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| MT41K512M8RH-125:E | Low-voltage DRAM Chip with DDR3L SDRAM technology, 4Gbit capacity, and 512Mx8 configuration | Micron Technology | 3~7 Days | 4,254 | ||
| H5TQ1G83BFR-H9C | High-density DDR SDRAM module with 128 megabytes organized in an 18-bit configuration in a Fine-pitch Ball Grid Array package with 78 pins | SKHYNIX | 3~7 Days | 3,725 | ||
| MT41K512M8RH-125IT:E | Low-voltage DDR3L SDRAM chip for electronic devices | MICRON | 3~7 Days | 4,915 | ||
| K4B2G0846B-HCF8 | K4B2G0846B-HCF8 is a NAND flash memory chip manufactured by Samsung | SAMSUNG | 3~7 Days | 6,703 | ||
| MT40A512M8RH-083E:B | DDR DRAM 512MX8 | Micron Technology | OBSOLETE | 3~7 Days | 5,802 | |
| MT40A1G8SA-062E:J | 8 Gigabit capacity | Micron Technology | 3~7 Days | 7,613 | ||
| MT40A2G8VA-062E:B | Upgrade your system's memory capacity with the reliable MT40A2G8VA-062E:B DDR4 Z22A 16Gb module." | Micron Technology | Obsolete | 3~7 Days | 5,030 | |
| MT41K512M8DA-107 AIT:P | MICMT41K512M8DA-107 AIT:P | Micron Technology | 3~7 Days | 6,495 | ||
| MT41K512M8RH-125 IT:E | Low-voltage DDR3L SDRAM chip for electronic devices | Micron Technology | 3~7 Days | 5,891 | ||
| MT41K128M8DA-107:J | DDR3L SDRAM technology for efficiency and speed | Micron Technology | ACTIVE | 3~7 Days | 3,077 | |
| MT41J512M8THD-15E:D | Compact 78-Pin FBGA package | MICRON | 3~7 Days | 3,427 | ||
| K4A4G085WE-BCRC | The FBGA-78 DRAM ROHS module, K4A4G085WE-BCRC, offers reliable memory storage for a variety of applications." | Samsung Artik | 3~7 Days | 5,372 | ||
| MT41K512M8DA-107 | The MT41K512M8DA-107 is a DDR3 SDRAM chip with a capacity of 512 Meg x 8 bits. | MICRON | 3~7 Days | 4,906 | ||
| K4B2G0846C-HCH9 | K4B2G0846C-HCH9 is a high-performance 2Gb DDR3 SDRAM chip designed for optimal efficiency. | SAMSUNG | 3~7 Days | 6,494 | ||
| MT41J256M8DA-125:K | DRAM DDR3 2G 256MX8 FBGA | Micron Technology | 3~7 Days | 4,438 | ||
| MT41K512M8DA-107:P | Reliable CMOS-based memory solution ideal for PBGA-compatible system | Micron | ACTIVE | 3~7 Days | 5,571 | |
| MT40A1G8SA-062E:E | Memory chip for computers, offering 8 gigabits of storage capacity | Micron Technology | OBSOLETE | 3~7 Days | 7,065 | |
| MT40A512M16TB-062E:J | 'MT40A512M16TB-062E is a DRAM module with a capacity of 512MB and a 16-bit data bus | Micron | OBSOLETE | 3~7 Days | 9,405 | |
| H5AN8G8NCJR-VKC | Enhance your computing experience with this reliable and compatible memory solutio | Sk Hynix | 3~7 Days | 5,074 | ||
| KTDM2G3C818BGCEAT | Efficient 933 MHz clock speed ensures seamless data transfer | Smart | 3~7 Days | 3,832 | ||
| MT40A2G8NRE-083E:B | Double Data Rate Dynamic Random Access Memory with a capacity of 2 gigabits organized in an 8-bit configuration | Micron Technology | OBSOLETE | 3~7 Days | 9,958 | |
| AS4C128M8D3LC-12BIN | High-Speed Memory Module for Industrial Applications ( character | Alliance Memory | 3~7 Days | 2,890 | ||
| AS4C128M8D3LC-12BCN | 128M x 8 DDR3 memory module with 800MHz frequency" | Alliance Memory | 3~7 Days | 2,483 | ||
| IS46TR81024BL-125KBLA1 | Industrial-grade DDR SDRAM module for reliable data stora | Issi | 3~7 Days | 2,174 | ||
| AS4C1G8D3LA-10BINTR | Reliable and high-quality DRAM solution for everyday computing | Alliance Memory | 3~7 Days | 7,433 | ||
| AS4C512M8D3LC-12BCNTR | AS4C512M8D3LC-12BCNTR | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 8,226 | |
| IS43QR85120B-083RBLI | Upgrade your device's RAM to 4GB with this low-voltage DDR4 memory stick, compatible with most modern systems | Issi | 3~7 Days | 3,025 | ||
| IS43QR85120B-083RBL | DDR4 SDRAM DRAM Chip with 4Gbit Capacity, 512Mx8 Configuration, 1.2V Voltage, and 78-Pin TW-BGA Package | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 8,899 | |
| IS43QR85120B-083RBLI-TR | High-performance memory for demanding application | Issi | 3~7 Days | 4,586 | ||
| AS4C512M8D4-75BIN | 512M X 8 1.2V 78-Pin FBGA | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 8,135 | |
| AS4C1G8D4-75BCNTR | Industrial-grade DDRRAM IC with -pin FBGA packag | Alliance Memory | 3~7 Days | 3,417 | ||
| AS4C256M8D3LC-12BCN | High-performance memory for demanding applicatio | Alliance Memory | 3~7 Days | 4,528 | ||
| AS4C512M8D4-83BCNTR | Streamline your data processing with fast DDRRAM technology | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 7,081 | |
| AS4C512M8D4-75BCNTR | x DDRSDRAM for improved computing powe | Alliance Memory | 3~7 Days | 7,128 | ||
| AS4C256M8D3LC-12BINTR | Packaged in a 78-Pin Fine-Pitch Ball Grid Array in Tape and Reel format | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 6,701 | |
| MT40A2G4SA-075:E | Designed for high performance and efficiency, the MT40A2G4SA-075:E chip is ideal for various memory-intensive applications | MICRON TECHNOLOGY INC | Last Time Buy | 3~7 Days | 9,429 | |
| MT41K1G8SN-107:A | 1.35V Low Voltage Operation | Micron Technology | OBSOLETE | 3~7 Days | 6,705 | |
| MT41K512M8RG-107:N | DDR3 DRAM memory chip | Micron Technology | OBSOLETE | 3~7 Days | 5,965 | |
| MT41K128M8DA-107 IT:J | 1Gbit 128Mx8 chip | Micron Technology Inc. | ACTIVE | 3~7 Days | 8,635 | |
| MT41K512M8RH-107:E | MT41K512M8RH-107E 512Mx8 DDR3 SDRAM Plastic Pb-Free BGA for Commercial Use | Micron Technology | OBSOLETE | 3~7 Days | 9,142 |
Additional Package/Case