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FBGA96 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| MT41J128M16JT-125 | Advanced technology enables faster data transfer rates up to Mbp | Micron Technology Inc | 3~7 Days | 5,053 | ||
| MT41K512M16HA-125IT:A | DRAM DDR3 8G 512MX16 FBGA | Micron | 3~7 Days | 3,626 | ||
| K4B2G1646Q-BCK0 | 128MX16 DDR3 DRAM | SAMSUNG | 3~7 Days | 6,030 | ||
| IS46TR16640B-15GBLA2 | Automotive DRAM module | ISSI | 3~7 Days | 7,513 | ||
| MT40A512M16JY-083E IT:B | MT40A512M16JY-083E DDR SDRAM | MICRON | 3~7 Days | 4,893 | ||
| W631GG6KB-12 | This is the description for product W631GG6KB-12 from Winbond Electronics Corporation | WINBOND | 3~7 Days | 6,183 | ||
| K4B1G1646G-BCH9 | Memory Chip DDR3 SDRAM | Samsung Electronics | OBSOLETE | 3~7 Days | 9,033 | |
| K4B4G0846D-BYK0 | High-density memory chip | SAMSUNG | 3~7 Days | 3,968 | ||
| NT5CB64M16FP-DH | Cutting-edge CMOS technology | Nanya Technology Corporation | 3~7 Days | 3,664 | ||
| H5TQ1G63EFR-PBC | Cutting-edge CMOS design for improved performance | SKHYNIX | 3~7 Days | 4,531 | ||
| W632GU6MB-12 | Low-voltage 2Gbit memory module | winbond | OBSOLETE | 3~7 Days | 9,552 | |
| K4B4G1646E-BMMA | Small outline, high-performance RAM module | Samsung | 3~7 Days | 7,033 | ||
| K4B2G1646F-BMMA | 96-pin FBGA Package for DRAM Chip | SAMSUNG | 3~7 Days | 6,002 | ||
| K4A8G165WB-BCTD | The K4A8G165WB-BCTD chip is a versatile solution for various applications requiring high-density memory storage | SAMSUNG | 3~7 Days | 6,718 | ||
| H5TC4G63CFR-PBA | FBGA-96 package | Hynix | 3~7 Days | 6,374 | ||
| D2516EC4BXGGB | DRAM Chip DDR3L SDRAM 4G-Bit 256Mx16 1.35V 96-Pin F-BGA | Kingston Technology | 3~7 Days | 2,000 | ||
| H5TC4G63AFR-PBA | 256MX16, 0.225ns, CMOS | SKHYNIX | 3~7 Days | 3,061 | ||
| K4B2G1646Q-BYK0 | DDR4 SDRAM chip with 8Gb capacity from Samsung. | SAMSUNG | 3~7 Days | 7,163 | ||
| K4B4G0846A-HCH9 | Samsung FBGA96 | SAMSUNG | 3~7 Days | 7,960 | ||
| D2516EC4BXGGB-U | High-speed 1600 MHz | Kingston | 3~7 Days | 2,617 | ||
| K4B2G1646F-BYK0 | Get high-speed performance with this DRAM chip, which boasts a capacity of 2Gbit and operates on low voltage | Samsung Electronics | OBSOLETE | 3~7 Days | 6,564 | |
| K4A4G165WE-BCTD | Model: K4A4G165WE-BCTD, FBGA-96 DRAM ROHS | Samsung Electronics | ACTIVE | 3~7 Days | 7,447 |
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