K4B4G0846D-BYK0

Name: K4B4G0846D-BYK0
Rating: 4.5 (10 reviews)

High-density memory chip

3,968 Effective Inventory

K4B4G0846D-BYK0

Effective Inventory3,968

High-density memory chip

Manufacturer Part # : K4B4G0846D-BYK0
Package/Case: FBGA96
Brand: SAMSUNG
Product Categories : Memory

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

About Payment

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If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K4B4G0846D-BYK0 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for K4B4G0846D-BYK0 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

DDR3 SDRAM Memory

Key Features

JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
VDDQ = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,
933MHz fCK for 1866Mb/sec/pin
8 Banks
Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13
Programmable Additive Latency: 0, CL-2 or CL-1 clock
Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
(DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9(DDR3-1866)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either On the fly using A12 or MRS]
Bi-directional Differential Data-Strobe
Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at
85°C
Support Industrial Temp ( -40 ~ 95°C )
- tREFI 7.8us at -40 °C ≤ TCASE ≤ 85°C
- tREFI 3.9us at 85 °C
Asynchronous Reset
Package : 78 balls FBGA - x4/x8
All of Lead-Free products are compliant for RoHS
All of products are Halogen-free

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer

Samsung

Product Category !

IC Chips

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K4B4G0846D-BYK0 PDF Download

FAQs

What is K4B4G0846D-BYK0?

The K4B4G0846D-BYK0 is a 4Gb (4 Gigabit) DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) module designed by Samsung. It is commonly used in computer systems, servers, and other electronic devices requiring high-speed, high-density memory.

How Does K4B4G0846D-BYK0 Work?

The K4B4G0846D-BYK0 works by providing high-speed access to stored data in a synchronous manner. The DDR4 SDRAM technology allows for data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data rate compared to single data rate RAM. This results in improved overall system performance and data throughput.

How Many Pins does K4B4G0846D-BYK0 have and What are the Functions of the Pinout Configuration?

The K4B4G0846D-BYK0 is housed in a standard 96-ball FBGA (Fine-pitch Ball Grid Array) package. The pinout configuration includes:

Data Bus: Multiple data pins for bi-directional communication of data.
Address Bus: Pins for specifying the memory address for read or write operations.
Control Signals: Pins for controlling the memory operation (e.g., chip enable, clock, reset, etc.).
Power and Ground Pins: Pins for supplying power and ground connections to the module.

What are the Pros and Cons of K4B4G0846D-BYK0?

Pros:

High Speed: Offers high-speed data transfer, improving system performance.
High Density: Provides a large memory capacity in a compact form factor.
Energy Efficiency: DDR4 technology offers improved power efficiency compared to previous generations.
Reliability: Manufactured by a reputable company known for producing high-quality memory products.

Cons:

Compatibility: May require specific hardware and motherboard support for proper functioning.
Cost: DDR4 memory modules can be more expensive compared to older generation memory types.

Are There Any Equivalents/Alternatives to K4B4G0846D-BYK0 for Recommendation?

Alternatives to the K4B4G0846D-BYK0 include:

The Hynix H5AN4G8NMFR from SK Hynix is a similar 4Gb DDR4 SDRAM module.
The Micron MT40A512M16JY from Micron Technology offers comparable specifications in the DDR4 SDRAM category.