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TO-247 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| RHRG3060CC | 0A, 600V V(RRM), TO-247 | Onsemi | OBSOLETE | 3~7 Days | 9,436 | |
| IXTH24N50 | MOSFET 24 Amps 500V 0.23 Rds | IXYS | NRND | 3~7 Days | 6,139 | |
| BU941ZP | Darlington NPN Power Transistors Darlington | Stmicroelectronics | 3~7 Days | 5,089 | ||
| APT1001RBN | Microchip Technology APT1001RBN specifications | Microchip | OBSOLETE | 3~7 Days | 5,776 | |
| NGTB20N120IHLWG | IGBT 1200V 20A FS1 Induction Heating | onsemi | OBSOLETE | 3~7 Days | 9,644 | |
| SPW47N65C3 | SPW47N65C3, an N-Channel MOSFET Transistor, boasts high performance and reliability | Infineon | NRND | 3~7 Days | 5,703 | |
| SPW47N60CFD | Power MOSFET, N-channel, 600V, 46A Continuous Drain Current, TO-247 Package | Infineon | NRND | 3~7 Days | 9,040 | |
| SPW47N60C3 | N-MOSFET transistor SPW47N60C3: 650V, 47A, 415W, unipolar, PG-TO247-3 | Infineon | ACTIVE | 3~7 Days | 7,739 | |
| SPW35N60CFD | MOSFET with 600V voltage rating, 34A current rating, and 120mOhm on-state resistance | Infineon | NRND | 3~7 Days | 8,614 | |
| SPW20N60S5 | SPW20N60S5: A 600V N-channel MOSFET designed to support currents of up to 20A | Infineon | OBSOLETE | 3~7 Days | 6,316 | |
| SPW17N80C3 | TO-247AC-3 package with a low drain-source on-resistance of 290mΩ | Infineon | ACTIVE | 3~7 Days | 9,450 | |
| SPW15N60C3 | Power MOSFET rated at 600V and 15A with TO-247 package | Infineon | NRND | 3~7 Days | 7,416 | |
| NGTB50N60FLWG | TO-247 package containing a high-power, 600V N-channel IGBT chip with 100A current rating | Onsemi | OBSOLETE | 3~7 Days | 5,989 | |
| NGTB40N120L3WG | The NGTB40N120L3WG is a TO-247-3 packaged Motor Driver, featuring advanced Ultra Field Stop technology for enhanced performance | Onsemi | OBSOLETE | 3~7 Days | 8,260 | |
| NGTB40N120IHLWG | Induction heating IGBT transistors 1200V 40A FS1 | Onsemi | Obsolete | 3~7 Days | 6,368 | |
| NGTB30N120IHSWG | 1200V 30A IGBT Transistors designed for Induction Heating | Onsemi | Obsolete | 3~7 Days | 8,078 | |
| NGTB25N120IHLWG | Transistor IGBT Chip | Onsemi | Obsolete | 3~7 Days | 8,261 | |
| IPW60R099CP | CoolMOS CP TO-247-3 600V 31A N-Channel MOSFET | Infineon | NRND | 3~7 Days | 8,747 | |
| IPW60R099C6 | ROHS-compliant N-channel TO-247AC-3 MOSFET suitable for various high-power applications with its low on-resistance of 99mΩ at a gate voltage of 10V | Infineon | NRND | 3~7 Days | 8,044 | |
| IPW60R075CP | Transistor MOSFET N-channel with a voltage rating of 600V and a current rating of 39A in TO-247 package | Infineon | NRND | 3~7 Days | 5,555 | |
| IPW60R070C6 | Automotive-grade N-channel MOSFET with 600V voltage rating and 53A current rating | Infineon | NRND | 3~7 Days | 7,055 | |
| IPW60R041C6 | High-voltage TO-247 Transistor | Infineon | NRND | 3~7 Days | 7,839 | |
| STGW45HF60WD | Transistor IGBT Chip | Stmicroelectronics | OBSOLETE | 3~7 Days | 8,208 | |
| FGH50T65UPD | Trans IGBT Chip | Onsemi | NRND | 3~7 Days | 9,968 | |
| APT60GT60BRG | Insulated Gate Bipolar Transistor (IGBT) semiconductor chip, N-channel, 600V, 100A, TO-247 packaging | Microchip | ACTIVE | 3~7 Days | 9,612 | |
| AOK40B65H2AL | The AOK40B65H2AL product features a N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications | Alpha And Omega Semiconductor | ACTIVE | 3~7 Days | 5,638 | |
| BYW99W200 | BYW99W-200 Rectifiers with 2X15 Amp and 200 Volt | Stmicroelectronics | 3~7 Days | 6,208 | ||
| FGH40T65UPD | TO-247 Tube Package Housing a Trans IGBT Chip | Onsemi | OBSOLETE | 3~7 Days | 5,038 | |
| STW14NC50 | Reliable and robust device suitable for industrial automation and motor control system | Stmicroelectronics | ACTIVE | 3~7 Days | 9,241 | |
| SPW47N60C2 | N-channel MOSFET with a voltage rating of 600V and a current handling capability of 47A, presented in a TO-247 package | Infineon Technologies Ag | ACTIVE | 3~7 Days | 9,945 | |
| LME49830TB/NOPB | Boost your audio fidelity with this robust and accurate power amplifier design | Texas Instruments | OBSOLETE | 3~7 Days | 5,053 | |
| LME49810TB | One-channel audio amplifier with a single function | Texas Instruments | OBSOLETE | 3~7 Days | 8,147 | |
| IGW50N60H3 | 333W 600V 50A IGBT Transistors | Infineon | 3~7 Days | 8,899 | ||
| STGW40N120KD | Robust IGBT transistors with a voltage rating of 1200 V and a current limit of 40 A | Stmicroelectronics | OBSOLETE | 3~7 Days | 9,898 | |
| DSEI60-06A | The FRED Low Vf series provides enhanced forward voltage characteristics and high breakdown voltages of up to 1200V | Littelfuse | 3~7 Days | 6,002 | ||
| DSEI30-06A | Rectifiers designed for 600V systems with 37A capacity | Littelfuse | 3~7 Days | 4,116 | ||
| NGTB30N135IHRWG | FS2-RC technology integrated in the 1350V IGBT for reliable induction heating operations | Onsemi | End Of Life | 3~7 Days | 5,294 | |
| IPW60R070CFD7 | Power MOSFET with 31A current rating and 650V voltage tolerance in a TO-247 package | Infineon | ACTIVE | 3~7 Days | 7,139 | |
| STW20NM60 | The STW20NM60 is a 600V N-channel transistor designed for power applications, featuring a TO-247 package and a maximum current rating of 20A | Stmicroelectronics | ACTIVE | 3~7 Days | 8,359 | |
| STW26NM50 | TO-247-packaged MDmesh Power MOSFET with an N-channel, rated for 500V and featuring a typical on-resistance of 100 milliohms at 26A | Stmicroelectronics | NRND | 3~7 Days | 8,897 |
Additional Package/Case