TO-247 Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
FGH40T100SMD | Described as FGH40T100SMD | Onsemi | OBSOLETE | 3~7 Days | 7,816 | |
TIP142 | Low voltage Darlington transistor for efficient power management | Onsemi | 3~7 Days | 6,057 | ||
TIP147G | Darlington Transistors BIP PNP 10A 100V | Onsemi | ACTIVE | 3~7 Days | 9,860 | |
RURG3060CC | General purpose and power diodes with ultra fast switching speed in TO-247 package | Onsemi | OBSOLETE | 3~7 Days | 6,967 | |
MJH6287G | Darlington Transistors 20A 100V Bipolar Power PNP | Onsemi | ACTIVE | 3~7 Days | 6,704 | |
MJH6284G | Darlington Transistors 20A 100V Bipolar Power NPN | Onsemi | ACTIVE | 3~7 Days | 8,291 | |
NGTB40N120FL3WG | IGBT Ultra Field Stop 1200V 40A | Onsemi | ACTIVE | 3~7 Days | 8,823 | |
NGTB40N120FL2WG | IGBT Transistors 1200V/40A FAST IGBT FSII | Onsemi | ACTIVE | 3~7 Days | 5,251 | |
TIP36C | Bipolar Transistors - BJT PNP Gen Pur Power | Onsemi | 3~7 Days | 4,678 | ||
TIP35C | The TIP35C devices, fashioned through epitaxial-base planar technology, excel in power linear and switching applications | Onsemi | 3~7 Days | 6,676 | ||
STGW80H65DFB | STGW80H65DFB is a high-speed trench gate field-stop IGBT from the HB Series | Stmicroelectronics Nv | Active | 3~7 Days | 9,928 | |
STGW60V60DF | Trench gate field-stop IGBT, V series 600 V, 60 A very high speed | Stmicroelectronics Nv | 3~7 Days | 5,809 | ||
SCT2280KE | Compact and efficient, SCT2280KE excels in automotive electronics | rohm semiconductor | 3~7 Days | 6,805 | ||
SCT2160KE | Silicon Carbide power FET featuring N-channel design, TO-247 packaging, 22A drain current, 1200V voltage rating, and 0.208 ohm on-resistance | rohm semiconductor | 3~7 Days | 8,740 | ||
AOK66914 | AOK66914 stands out with its advanced features as an N-channel trench power MOSFET | Alpha and Omega Semiconductor | ACTIVE | 3~7 Days | 5,730 | |
IRFP7537 | High-voltage N-channel MOSFET transistor suitable for high-power switching circuits and motor control system | infineon | NRND | 3~7 Days | 7,220 | |
IDW75D65D1 | Diodes suitable for various applications in Industry 14, including general purpose, power, and switching uses | infineon | ACTIVE | 3~7 Days | 9,018 | |
IMW65R072M1H | Detailed Overview of IMW65R072M1H Power FET | infineon | 3~7 Days | 9,694 | ||
IPW60R099P7 | TO-247-3 MOSFETs ROHS IPW60R099P7 | Infineon Technologies | ACTIVE | 3~7 Days | 9,187 | |
SCH2080KE | Robust and reliable component for demanding automotive applications | rohm semiconductor | Obsolete | 3~7 Days | 9,140 | |
IPW60R060P7 | High-power transistor suitable for high-voltage applications up t | Infineon | 3~7 Days | 3,111 | ||
NGTB40N60IHLWG | trans igbt chip n-ch 600v 80a 250w 3-pin(3+tab) to-247 tube | Onsemi | Obsolete | 3~7 Days | 9,832 | |
RURG75120 | Rectifiers rated at 80 amps and 1200 volts | Onsemi | OBSOLETE | 3~7 Days | 6,416 | |
RURG50100 | 50A 1000V Rectifiers | Onsemi | OBSOLETE | 3~7 Days | 6,888 | |
RURG30120 | Rectifiers boasting ultra-fast performance in TO-247 package | Onsemi | OBSOLETE | 3~7 Days | 9,412 | |
IRFP3710 | Advanced power management component for smart grid infrastructure | Infineon | 3~7 Days | 5,992 | ||
IRFP150N | High-power N-channel MOSFET for industrial application | Infineon | 3~7 Days | 3,202 | ||
IRFP2907 | State-of-the-art power MOSFET technology for high-reliability performance | Infineon | 3~7 Days | 4,220 | ||
IRFP250N | Efficient device with low Rds(on) for high-speed switchin | Infineon | 3~7 Days | 5,932 | ||
IRFP4710 | TO-247AC Package, 3 PIN | Infineon Technologies AG | 3~7 Days | 6,536 | ||
IRFP260N | High-power switching device for high-voltage applications up to and | Infineon | 3~7 Days | 6,354 | ||
IRFP9140N | High-power switching device for high-voltage applications up to 100V | Infineon | 3~7 Days | 2,951 | ||
IRFP064N | Compact TO-247AC package ideal for industrial and automotive applications | Infineon | 3~7 Days | 7,769 | ||
IPW60R099P6 | Top-notch power MOSFET | Infineon | Active | 3~7 Days | 5,997 | |
IPW60R125P6 | Top-performing high-power MOSFET at a competitive price | Infineon Technologies | ACTIVE | 3~7 Days | 9,026 | |
IXTH03N400 | High-voltage N-channel MOSFET with a current rating of 0.3A and a TO-247 package | IXYS | Obsolete | 3~7 Days | 7,153 | |
IPW60R160P6 | Description: High Power Legacy MOSFET | Infineon Technologies | ACTIVE | 3~7 Days | 6,740 | |
IPW60R070P6 | IPW60R070P6 is a TO-247-3 package MOSFET designed for use in applications requiring high voltage switching and power handling capabilities | Infineon Technologies | ACTIVE | 3~7 Days | 6,910 | |
IPW60R280P6 | High Voltage N-Channel MOSFET with 13.8A Output in TO-247 Package | infineon | ACTIVE | 3~7 Days | 5,042 | |
IDW30E65D1 | General purpose diodes for power applications | Infineon Technologies | ACTIVE | 3~7 Days | 7,379 |
Additional Package/Case