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TO-247 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| IRGPS60B120KD | N-Channel Insulated Gate Bipolar Transistor, rated for 105A Collector Current and 1200V Breakdown Voltage, TO-274AA package | IR | 3~7 Days | 7,085 | ||
| IRG4PC50KD | Featuring an N-channel design | IR | 3~7 Days | 7,830 | ||
| IRFP3415 | 43A continuous drain current | INFINEON | 3~7 Days | 4,893 | ||
| IRFP2907Z | TO-247AC plastic package for easy mounting | INFINEON | 3~7 Days | 4,891 | ||
| IRFP240N | Advanced MOSFET technology enables high-speed switching | Infineon | 3~7 Days | 3,942 | ||
| STW10NK80Z | 800V N-channel MOSFET with 9A current capability, TO-247 Tube | STMicroelectronics | 3~7 Days | 3,002 | ||
| STW40N90K5 | TO-247 packaged N-channel 900 V, 0.088 Ohm typical, 40 A MDmesh K5 Power MOSFET | STMicroelectronics | 3~7 Days | 4,217 | ||
| MJH11019 | Bipolar Darlington Transistors rated at 15A and 200V | Onsemi | 3~7 Days | 4,455 | ||
| SPW16N50C3 | N-Channel power transistor | INFINEON | 3~7 Days | 7,305 | ||
| DSA90C200HB | DSA90C200HB: A Schottky diode renowned for its high performance, minimal loss, and smooth recovery, boasting a common cathode setup." | Ixys | ACTIVE | 3~7 Days | 7,354 | |
| IRFP4410Z | Find IRFP4410Z equivalent transistors for your electronic projects | Infineon | Restricted Availability | 3~7 Days | 6,146 | |
| IRFP4137 | IRFP4137 is a power MOSFET transistor that can handle up to 240A and 75V. | INFINEON | 3~7 Days | 7,624 | ||
| 11N60C2 | Power MOSFET for high-speed switching applications with low on-resistance. | INFINEON | 3~7 Days | 5,626 | ||
| STW60NE10 | Transistor MOSFET suitable for switching applications | STMicroelectronics | 3~7 Days | 7,123 | ||
| IRGP4266 | IRGP4266 is a high power IGBT chip for industrial applications. | IR | 3~7 Days | 6,978 | ||
| RJH1CF7 | Multifunctional automotive microcontroller with high performance and safety features. | IXYS | 3~7 Days | 5,178 | ||
| IRFP23N50 | IRFP23N50 is a MOSFET transistor chip used for high power applications. | INFINEON | 3~7 Days | 4,049 | ||
| KGT50N60KDA | Package Type: TO-247 | KEC | 3~7 Days | 7,683 | ||
| 2SC5168 | Two-Element Bipolar Transistor for Small Signal Applications | MITSUBISHI | 3~7 Days | 6,334 | ||
| SCT3080KL | The SCT3080KL is a high power N-channel MOSFET with a gate-source voltage of ± 30V and drain current of 75A. | ROHM | 3~7 Days | 5,135 | ||
| BUT70W | Trans GP BJT NPN 125V 200000mW 3-Pin TO-247 Tube | STMicroelectronics | Active | 3~7 Days | 3,472 | |
| IXFX32N50 | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 | IXYS | Obsolete | 3~7 Days | 3,545 | |
| IRFP460Z | INFINEON | 3~7 Days | 3,620 | |||
| IRFP460B | MOSFET N-CH 500V 20A TO-247AC | VISHAY | 3~7 Days | 4,540 | ||
| IRGP30B120KD | IGBT; Package/Case: TO-247AD; Leaded Process Compatible: No; Mounting Type: Through Hole; Peak Reflow Compatible (260... | IR | 3~7 Days | 4,692 | ||
| FJA4213 | Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN | FAIRCHILD | 3~7 Days | 4,376 | ||
| FGA180N33ATD | IGBT 330V 180A 390W TO3P | FAIRCHILD | 3~7 Days | 7,247 | ||
| CS30-16IO1 | Silicon Controlled Rectifier, 49A I(T)RMS, 31000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-247AD, ROHS COMPLIANT, ISOPLUS247, 3 PIN | IXYS | 3~7 Days | 4,148 | ||
| CS45-12IO1 | Silicon Controlled Rectifier, 75A I(T)RMS, 48000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-247AD, TO-247AD, 3 PIN | IXYS | 3~7 Days | 7,262 | ||
| 24N60CFD | INFINEON | 3~7 Days | 7,886 | |||
| 1MBK50D-060S | Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, TO-247 | FUJITSU | 3~7 Days | 7,655 | ||
| 2SK3681 | N-CHANNEL SILICON POWER MOSFET | FUJITSU | 3~7 Days | 7,686 | ||
| 2SK3549 | N-CHANNEL SILICON POWER MOSFET | FUJITSU | 3~7 Days | 3,997 | ||
| IRG4PC30UD | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | IR | 3~7 Days | 6,182 | ||
| IRFP250A | Power Field-Effect Transistor, 32A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | INFINEON | 3~7 Days | 4,600 | ||
| IRFP150M | MOSFET N-CH 100V 42A TO-247AC | INFINEON | Active | 3~7 Days | 5,320 | |
| HUF75344G | MOSFET N-CH 55V 75A TO-247 | FAIRCHILD | 3~7 Days | 6,831 | ||
| 2STW100 | NPN power Darlington transistor | STMicroelectronics | End Of Life | 3~7 Days | 3,483 | |
| SPW24N60C3 | With a current rating of 24 | Infineon | ACTIVE | 3~7 Days | 8,932 | |
| RHRG1560CC | Fast recovery/high efficiency diode | Onsemi | Obsolete | 3~7 Days | 5,634 |
Additional Package/Case