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TO247-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| STGWA40N120KD | Transistor IGBT Chip N-Channel 1200V 80A 240W TO-247 Package | Stmicroelectronics | 3~7 Days | 5,606 | ||
| IXXX100N60B3H1 | 695W power 200A current 600V voltage PT (Press-fit type) TO-247-3 IGBTs compliant with ROHS | Ixys Integrated Circuits Division | 3~7 Days | 3,794 | ||
| IXXH75N60B3D1 | N-channel 600V 160A 750W TO-247AD | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,101 | |
| IXXH75N60B3 | IGBT Transistors XPT-GENX3 | Ixys Integrated Circuits Division | 3~7 Days | 4,036 | ||
| IXXH50N60C3D1 | IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,365 | |
| IXXH50N60B3D1 | Power semiconductor device for high voltage applications | Ixys Integrated Circuits Division | 3~7 Days | 6,183 | ||
| IGW60T120 | The IGW60T120 is an insulated gate bipolar transistor featuring N-channel configuration, with a voltage tolerance of 1 | Infineon Technologies | End Of Life | 3~7 Days | 8,052 | |
| HGTG20N60C3D | Ignition Driver for Automotive Applications" | Onsemi | OBSOLETE | 3~7 Days | 8,328 | |
| FGH60N6S2 | Motion controllers and ignition drivers for single 600V N-Channel setups | Onsemi | OBSOLETE | 3~7 Days | 8,807 | |
| FGH30N6S2D | Trans IGBT Chip N-CH 600V 45A 167W 3-Pin(3+Tab) TO-247 Rail | Onsemi | 3~7 Days | 2,784 | ||
| APT30GT60BRDQ2G | High power handling capability of 250W | Microchip Technology | OBSOLETE | 3~7 Days | 8,802 | |
| AOK30B135W1 | Product AOK30B135W1 is a Trans IGBT Chip designed to handle high voltage and current levels, ensuring efficient operation in various applications | Alpha & Omega Semiconductor Inc. | ACTIVE | 3~7 Days | 9,734 | |
| STW9NA80 | TO-247-packaged N-channel silicon power MOSFET rated at 9.1A and 800V with 1-ohm impedance | Stmicroelectronics | OBSOLETE | 3~7 Days | 9,091 | |
| STW20NC50 | N-Channel Si Power MOSFET with 18.4A, 500V, and 0.27ohm | Stmicroelectronics | OBSOLETE | 3~7 Days | 6,638 | |
| MJW16212 | 650V 150W NPN Bipolar Transistors | Motorola | ACTIVE | 3~7 Days | 7,972 | |
| IHW40N135R3 | IGBT Transistors TrenchStop RC for IHW40N135R3 | Infineon Technologies | OBSOLETE | 3~7 Days | 7,268 | |
| IHW30N135R3 | IHW30N135R3 is an IGBT transistor designed specifically for high-power applications, featuring TrenchStop RC technology | Infineon Technologies | ACTIVE | 3~7 Days | 9,664 | |
| HGTG24N60D1 | Product description: 125 watt TO-247 IGBTs with a maximum current rating of 40A and voltage of 600V. ROHS compliant | Harris Corporation | 3~7 Days | 6,010 | ||
| HGTG15N120C3 | HGTG15N120C3, an N-Channel IGBT from the UFS Series, is rated for a maximum current of 35A and a voltage of 1200V | Harris Corporation | 3~7 Days | 6,066 | ||
| HGTG12N60D1D | TO-247 package IGBTs with 75W, 21A, 600V rating | Harris Corporation | 3~7 Days | 7,082 | ||
| C2M0025120D | N-Channel Silicon Carbide (SiC) Power MOSFET with 1.2KV Voltage Rating and 63A Current Capacity in TO-247 Package | Wolfspeed, Inc | 3~7 Days | 6,334 | ||
| IHW20N135R3 | 1350V 40A 310W 3-Pin(3+Tab) TO-247 Tube Transistor IGBT Chip | Infineon Technologies | OBSOLETE | 3~7 Days | 8,166 | |
| IXGH35N120C | 300mW Power Dissipation | Ixys Integrated Circuits Division | 3~7 Days | 2,483 | ||
| VS-80APF06PBF | 600V 80A 190ns 3-pin(3+tab) TO-247AC tube switching rectifier diode | Siliconix | 3~7 Days | 4,911 | ||
| IXDH35N60B | TO-247AD 3-Pin Transistor for IXDH35N60B | Ixys Integrated Circuits Division | 3~7 Days | 5,823 | ||
| IRG4PH50UDPBF | High Voltage Transistor IGBT Chip with 45A Capacity | Infineon Technologies | OBSOLETE | 3~7 Days | 5,547 | |
| AOK20B60D1 | TO-247 packaged N-channel IGBT chip with a voltage rating of 600V and a current rating of 40A | Alpha & Omega Semiconductor Inc. | 3~7 Days | 6,602 | ||
| IRG7PH42UDPBF | Electronic Component by IRG7PH42UDPBF | Infineon Technologies | OBSOLETE | 3~7 Days | 8,834 | |
| IXFH6N90 | IXFH6N90: 900V N-Channel Power MOSFET with 6A Continuous Drain Current | Ixys Integrated Circuits Division | 3~7 Days | 2,402 | ||
| RGTH00TS65DGC11 | IGBT Transistor with 650V and 50A | Rohm Semiconductor | 3~7 Days | 2,535 | ||
| C3M0280090D | 900V Silicon Carbide MOSFET with 280mOhm on-state resistance | Wolfspeed, Inc | ACTIVE | 3~7 Days | 9,664 | |
| APT5020BNFR | Featuring a TO-247AD package, the APT5020BNFR N-Channel MOSFET is optimized for high-power applications requiring a voltage rating of up to 500V | Microchip Technology | 3~7 Days | 4,910 | ||
| VS-60APH03-N3 | Single-Phase Rectifier Diode | Siliconix | Active | 3~7 Days | 5,026 | |
| VS-60CPU06-N3 | Rectifiers boasting Ultrafast 27ns FRED Pt technology, delivering 2x30A at 600V." | Siliconix | 3~7 Days | 2,804 | ||
| VS-80CPH03-N3 | Hyperfast 34ns FRED Pt Rectifiers 2x40A 300V | Siliconix | 3~7 Days | 6,691 | ||
| VS-80CPQ150-N3 | 50V VS-80CPQ150-N3 | Siliconix | ACTIVE | 3~7 Days | 6,185 | |
| VX60202PW-M3/P | 60A 200V Schottky Rectifier Diodes - Trench SKTY | Siliconix | 3~7 Days | 4,962 | ||
| STGW60H60DLFB | Product STGW60H60DLFB is a Trans IGBT Chip with a N-Channel | Stmicroelectronics | 3~7 Days | 4,440 | ||
| RJH60F7BDPQ-A0#T0 | Product Description: Trans IGBT Chip N-Channel 600V 90A 328.9W 3-Pin(3+Tab) TO-247A Tube | Renesas Electronics America Inc | 3~7 Days | 6,431 | ||
| RJH60F7DPQ-A0#T0 | Power Transistor Chip with N-Channel IGBT, 600 Volts, 90 Amps, 328.9 Watts | Renesas Electronics America Inc | 3~7 Days | 3,288 |
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