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TO247-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| CMF20120D | High power handling capabilities | Wolfspeed, Inc | OBSOLETE | 3~7 Days | 7,954 | |
| CMF10120D | CMF10120D is a N-channel Silicon Carbide MOSFET capable of operating at 1.2KV with a current rating of 24A in a TO-247 package | Wolfspeed, Inc | OBSOLETE | 3~7 Days | 8,192 | |
| C2D20120D | The C2D20120D from Wolfspeed is a dual SiC Schottky diode featuring a common cathode | Wolfspeed, Inc | OBSOLETE | 3~7 Days | 8,187 | |
| ARF447G | RF power transistor | Microchip Technology | 3~7 Days | 3,705 | ||
| APT6040BN | Ideal for high voltage and high current applications due to its robust design | Microsemi Corporation | 3~7 Days | 5,165 | ||
| APT1001R1BN | Microchip Technology APT1001R1BN | Microchip Technology | OBSOLETE | 3~7 Days | 9,304 | |
| ARF446G | Advanced semiconductor device for high-frequency applications requiring strong signal processing capabilities | Microchip Technology | 3~7 Days | 5,980 | ||
| APT5020BN | N-channel MOSFET for high-voltage and high-current requirements met | Microchip Technology | OBSOLETE | 3~7 Days | 5,752 | |
| 60APU02PBF | 60 amp rectifiers operating at 200 volts | Siliconix | OBSOLETE | 3~7 Days | 6,605 | |
| 80EPF06 | 80 amp rectifiers designed for 600 volt applications | Siliconix | OBSOLETE | 3~7 Days | 8,175 | |
| 40TPS12APBF | 35A phase control SCR | Siliconix | 3~7 Days | 7,216 | ||
| 30CPU04 | 4pbf recommended rectifiers alt 844 | Siliconix | OBSOLETE | 3~7 Days | 9,497 | |
| 30CPF02 | Through Hole TO-247AC Diode 200 V 30A | Siliconix | 3~7 Days | 4,153 | ||
| 30CPQ090 | Described as a Schottky rectifier diode, product 30CPQ090 is engineered to operate at 90V with a current handling capacity of 30A | Siliconix | 3~7 Days | 7,734 | ||
| IRGP4066PBF | TO-247AC IGBTs: 600V, 140A, 454W, ROHS certified | Infineon Technologies | End Of Life | 3~7 Days | 7,371 | |
| IRG4PH50UPBF | International Rectifier IRG4PH50UPBF IGBT Transistor | Infineon Technologies | OBSOLETE | 3~7 Days | 6,265 | |
| IRG4PH40UD-EPBF | IGBT Chip for Transistors, N-Channel, 1200V, 41A, 160W | Infineon Technologies | 3~7 Days | 4,367 | ||
| IRG4PH40KDPBF | TO-247-packaged IGBT with N-channel design, capable of handling currents up to 30A and voltages up to 1200V, equipped with HEXFRED Diode | Infineon Technologies | OBSOLETE | 3~7 Days | 7,897 | |
| IRG4PF50WDPBF | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | Infineon Technologies | OBSOLETE | 3~7 Days | 8,124 | |
| IRG4PC50SPBF | Standard IGBTs - Designed for 600V DC operation with a frequency range of up to 1 kHz | Infineon Technologies | OBSOLETE | 3~7 Days | 8,951 | |
| IRG4PC40KDPBF | TO-247AC Package Transistor | Infineon Technologies | OBSOLETE | 3~7 Days | 7,991 | |
| IRG4PC40FDPBF | IRG4PC40FDPBF IGBT by Infineon, 49A 600V, TO-247AC Package | Infineon Technologies | OBSOLETE | 3~7 Days | 9,966 | |
| IRG4PC30FDPBF | TO-247AC-packaged IGBTs rated at 100 watts, with a current capacity of 31 amps and a voltage tolerance of 600 volts, compliant with ROHS regulations | Infineon Technologies | OBSOLETE | 3~7 Days | 7,873 | |
| IXSH45N120B | CH 1200V 75A 300mW | Ixys Integrated Circuits Division | 3~7 Days | 7,461 | ||
| IXSH40N60B | TO-247AD Packaged IGBT Chip featuring N-Channel Design, 600V Voltage, 75A Current, and 280W Power Handling | Ixys Integrated Circuits Division | 3~7 Days | 3,352 | ||
| IXSH35N140A | IXSH35N140A: N-Type IGBT Semiconductor Chip, 1400 Volts, 70 Amps, 300 Milliwatts Power Dissipation, TO-247AD Package | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 6,432 | |
| IXSH25N120AU1 | 1200V Insulated Gate Bipolar Transistor | Ixys Integrated Circuits Division | 3~7 Days | 5,781 | ||
| IXGH90N60B3 | Transistor IGBT Chip | Ixys Integrated Circuits Division | 3~7 Days | 5,668 | ||
| IXGH60N60B2 | N-channel insulated gate bipolar transistor (IGBT) chip capable of handling up to 600 volts and 75 amps | Ixys Integrated Circuits Division | 3~7 Days | 7,059 | ||
| IXGH41N60 | Product IXGH41N60 is an N-channel Insulated Gate Bipolar Transistor (IGBT) chip optimized for use in circuits requiring 600V and 76A ratings | Ixys Integrated Circuits Division | 3~7 Days | 3,390 | ||
| IXGH34N60B2 | Power Transistor Silicon Chip for High Voltage Applications | Ixys Integrated Circuits Division | 3~7 Days | 2,121 | ||
| IXGH20N100 | High Voltage Power Switch | Ixys Integrated Circuits Division | 3~7 Days | 6,367 | ||
| IRGP4086PBF | 300V 40A IGBT Transistors with High-Speed Capabilities | Infineon Technologies | OBSOLETE | 3~7 Days | 7,047 | |
| IRGP4068DPBF | Trans IGBT Chip N-Channel 600V 96A 330W TO-247AC Tube | Infineon Technologies | OBSOLETE | 3~7 Days | 6,132 | |
| IRGP4050 | Outstanding performance in power electronics applications | Infineon Technologies | OBSOLETE | 3~7 Days | 7,062 | |
| IRG7PH35UDPBF | Induction cooking IGBTs featuring trench technology, capable of handling voltages up to 1200V and currents up to 50A | Infineon Technologies | OBSOLETE | 3~7 Days | 8,690 | |
| IRG4PH20K | High-power switching device for DC and AC application | Infineon Technologies | OBSOLETE | 3~7 Days | 5,209 | |
| IRG4PC40K | An IGBT by Infineon, designated IRG4PC40K, capable of handling currents up to 42 amps and voltages up to 600 volts, presented in a TO-247AC package | Infineon Technologies | 3~7 Days | 3,670 | ||
| IRG4PC40FD | TO247 IRG4PC40FD IGBT 49A | Infineon Technologies | OBSOLETE | 3~7 Days | 7,855 | |
| IRG4PC30U | TO-247AC Packaged Transistor Chip | Infineon Technologies | OBSOLETE | 3~7 Days | 6,595 |
Additional Package/Case