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TO247-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| FCH023N65S3-F155 | MOSFET SuperFET3 650V 23 mOhm | Onsemi | NRND | 3~7 Days | 5,382 | |
| FGH75T65SHD-F155 | IGBT, 650 V, 75 A Field Stop Trench | Onsemi | 3~7 Days | 2,332 | ||
| FGH60T65SHD-F155 | Trans IGBT Chip N-CH 650V 120A 349W 3-Pin(3+Tab) TO-247 Tube | Onsemi | 3~7 Days | 4,338 | ||
| FGH40T65SHD-F155 | IGBT Transistors 650 V, 40 A Field Stop Trench IGBT | Onsemi | 3~7 Days | 4,366 | ||
| FGH40N60UFDTU | IGBT Transistors 600V 40A Field Stop | Onsemi | Active | 3~7 Days | 5,584 | |
| FGH20N60SFDTU | IGBT Transistors 600V 20A Field Stop | Onsemi | NRND | 3~7 Days | 7,423 | |
| FDH45N50F-F133 | Suitable for use in rail-mounted applications | Onsemi | 3~7 Days | 5,931 | ||
| FGH40T120SMD-F155 | IGBT Transistors 1200V, 40A Field Stop Trench IGBT | Onsemi | 3~7 Days | 4,572 | ||
| NGTB40N65FL2WG | IGBT Transistors 650V/40A FAST IGBT FSII T | Onsemi | 3~7 Days | 7,176 | ||
| NGTB25N120FL3WG | 25A FS3 IGBT Transistors | Onsemi | Active | 3~7 Days | 7,226 | |
| IPW60R099P7XKSA1 | N-channel power MOSFET with a maximum voltage rating of 600V and a current capacity of 31A, housed in a TO-247 package | Infineon Technologies | ACTIVE | 3~7 Days | 8,702 | |
| IRFP4768PBF | 1-Element Configuration | Infineon Technologies | 3~7 Days | 6,141 | ||
| IRFP3006PBF | TO-247 IRFP3006PBF MOSFETs ROHS | Infineon Technologies | ACTIVE | 3~7 Days | 9,101 | |
| IRFP3206PBF | N-channel silicon power MOSFET with a voltage rating of 60V and a maximum current rating of 200A in a TO-247AC package | Infineon Technologies | ACTIVE | 3~7 Days | 9,850 | |
| IRFP7530PBF | TO-247AC Encased N-Channel Silicon MOSFET, Designed for High-Power Applications with 60V Voltage Capacity and 281A Current Handling Capability | Infineon Technologies | ACTIVE | 3~7 Days | 6,268 | |
| IRFP7430PBF | Superior performance MOSFET for high-power applications | Infineon Technologies | ACTIVE | 3~7 Days | 6,976 | |
| IDW40G120C5BFKSA1 | Diode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube | Infineon Technologies | 3~7 Days | 7,286 | ||
| IDW30G65C5XKSA1 | Rectifier Diode Schottky 650V 30A 3-Pin(3+Tab) TO-247 Tube | Infineon Technologies | 3~7 Days | 5,668 | ||
| IKW40N65H5FKSA1 | IKW40N65H5FKSA1 | Infineon Technologies | Active | 3~7 Days | 7,314 | |
| IKQ75N120CH3XKSA1 | High-Power IGBT Transistor operating at 1.2kV with 75A current capability and 256W power handling in TO247-3 Package | Infineon Technologies | ACTIVE | 3~7 Days | 6,565 | |
| IKW50N60H3FKSA1 | High-performance IGBT Transistors | Infineon Technologies | Active | 3~7 Days | 5,319 | |
| IKQ120N60TXKSA1 | Power Transistor Insulated Gate Bipolar Transistor 600V | Infineon Technologies | ACTIVE | 3~7 Days | 9,391 | |
| IKW50N65EH5XKSA1 | IGBT Transistors INDUSTRY 14 | Infineon Technologies | 3~7 Days | 7,012 | ||
| IKFW75N60ETXKSA1 | IGBT Transistors INDUSTRY 14 | Infineon Technologies | Active | 3~7 Days | 5,726 | |
| IKW75N60TFKSA1 | 600V 80A IGBT Chip N-Channel Transistor | Infineon Technologies | ACTIVE | 3~7 Days | 6,349 | |
| IRFP3710PBF | TO-247AC package type with 3 pins and a tab for the N-channel MOSFET | Infineon Technologies | Active | 3~7 Days | 7,625 | |
| IRFP150NPBF | High-power MOSFET for demanding applications, up to and | Infineon Technologies | ACTIVE | 3~7 Days | 9,365 | |
| IRFP9140NPBF | IRFP9140NPBF is a -100V Single P-Channel HEXFET Power MOSFET available in a TO-247AC package | Infineon Technologies | ACTIVE | 3~7 Days | 9,416 | |
| VS-80EPF06PBF | VS-80EPF06PBF is a rectifier diode switch capable of handling 600V and 80A with a fast response time of 190ns, presented in a TO-247AC package | Vishay | 3~7 Days | 4,891 | ||
| IRFP254N | N-channel MOSFET with a maximum voltage rating of 250V and a current rating of 23A | Vishay | OBSOLETE | 3~7 Days | 6,376 | |
| IXGH25N250 | NPT IGBTs with 2.5kV voltage rating and 60A current | Ixys Corporation | ACTIVE | 3~7 Days | 6,630 | |
| IRG4PH30K | IGBT, IRG4PH30K 20A 1200V TO247 | Infineon Technologies | OBSOLETE | 3~7 Days | 5,886 | |
| KCF25A20 | Introducing the KCF25A20, a TO-247 Diode Switching device capable of handling 200V and 25A | Kyocera Corporation | Active | 3~7 Days | 9,249 | |
| HGTG20N60C3 | Insulated Gate Bipolar Transistors like HGTG20N60C3 offer efficient switching and high voltage capabilities | Onsemi | OBSOLETE | 3~7 Days | 9,820 | |
| APT30GT60BRG | APT30GT60BRG Insulated Gate Bipolar Transistor - NPT Standard Speed | Microchip Technology | ACTIVE | 3~7 Days | 8,818 | |
| IXSH30N60B | IGBT component with 600V voltage rating, 55A current rating, and 200W power rating in a TO-247AD package | Ixys Corporation | 3~7 Days | 4,921 | ||
| IPW60R045P7XKSA1 | This product is an N-channel MOSFET designed to handle up to 600 volts and a maximum current of 61 amps, packaged in TO-247 | Infineon Technologies | 3~7 Days | 2,901 | ||
| IXZH10N50L2A | 100V RF MOSFET with 70MHz frequency range and 17dB gain, capable of handling up to 200W power, packaged in TO-247 (IXFH) | Ixys-Rf | 3~7 Days | 7,104 | ||
| R6076ENZ4C13 | R6076ENZ4C13 is utilized as a power MOSFET in switch applications | Rohm Semiconductor | 3~7 Days | 7,569 | ||
| C3M0016120D | High-power SiC MOSFET for demanding application | Wolfspeed, Inc | Active | 3~7 Days | 9,244 |
Additional Package/Case