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TO247-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| AOK065V65X2 | High voltage 650V 40.3A N-Channel MOSFET | Alpha & Omega Semiconductor Inc. | 3~7 Days | 4,059 | ||
| G3R40MT12D | Meet the G3R40MT12D, a Power Field-Effect Transistor engineered to enhance power transmission efficiency | Genesic Semiconductor | Active | 3~7 Days | 7,765 | |
| G3R160MT17D | G3R SiC MOSFET 1700V 160mohm TO-247-3 | Genesic Semiconductor | ACTIVE | 3~7 Days | 7,399 | |
| APT40SM120B | High-voltage N-channel SiC MOSFET in TO-247 package with 41A current capability | Microchip Technology | OBSOLETE | 3~7 Days | 9,598 | |
| ICE47N60W | High Voltage Switching Transistor | Icemos Technology | 3~7 Days | 4,296 | ||
| C2M0045170D | Three-pin, with three tabs, Transistor MOSFET for high-voltage applications | Wolfspeed, Inc | Active | 3~7 Days | 9,878 | |
| R6046FNZ1C9 | RoHS-certified product R6046FNZ1C9, ready for immediate dispatch, produced in 2014 | Rohm Semiconductor | 3~7 Days | 2,278 | ||
| VS-APU3006-F3 | TO-247AC Tube Diode Switching 600V 30A 3-Pin(3+Tab) | Siliconix | 3~7 Days | 5,728 | ||
| VS-HFA32PA120CPBF | Hexfred Rectifiers with TO-247 Package | Siliconix | 3~7 Days | 3,589 | ||
| VS-60CPH03PBF | TO-247AC packaged rectifier diode switch with a 300V voltage threshold and 60A current handling capability, offering a rapid 55ns response time." | Siliconix | OBSOLETE | 3~7 Days | 6,967 | |
| VS-40TPS12APBF | Silicon Controlled Rectifier with 55 Amps and 1200 Volts | Siliconix | OBSOLETE | 3~7 Days | 9,559 | |
| VS-40CPQ080PBF | Schottky Rectifier Diode - 80V, 40A, TO-247AC Package | Siliconix | 3~7 Days | 7,980 | ||
| VS-80EPF12PBF | Fast Response Time of 480ns | Siliconix | 3~7 Days | 5,304 | ||
| VS-63CPT100 | TO-247AC 3-Pin Schottky Rectifier Diode 100V 60A | Siliconix | 3~7 Days | 3,055 | ||
| VS-65PQ015PBF | 3-pin design with a tab, suitable for high power applications | Siliconix | 3~7 Days | 2,706 | ||
| VS-80CPH03-F3 | Rectifiers with 2x40A rating and 300V Hyperfast technology | Siliconix | Obsolete | 3~7 Days | 8,584 | |
| STW17N62K3 | TO-247 package N-channel Si Power MOSFET rated for 15A current, 620V voltage, and 0.38ohm resistance | Stmicroelectronics | OBSOLETE | 3~7 Days | 8,379 | |
| STW30NM60ND | N-Channel Power MOSFET | Stmicroelectronics | OBSOLETE | 3~7 Days | 9,837 | |
| STPS40L40CW | 247 Schottky Rectifier Diode 40V 40A 3-Pin(3+Tab) | Stmicroelectronics | 3~7 Days | 2,961 | ||
| SCT2450KEC | The SCT2450KEC transistor is an N-MOSFET built with Silicon Carbide (SiC) material, operating in a unipolar manner | Rohm Semiconductor | OBSOLETE | 3~7 Days | 7,262 | |
| SCT2280KEC | SCT2280KEC by ROHM | Rohm Semiconductor | OBSOLETE | 3~7 Days | 7,349 | |
| MBR40100PT | Rectifier Diode with Schottky Technology | Taiwan Semiconductor Corporation | 3~7 Days | 4,959 | ||
| IXFH14N100Q2 | High-voltage MOSFET with 14 Amps, 0.90 Rds, and 1000V voltage rating | Ixys Integrated Circuits Division | NRND | 3~7 Days | 9,454 | |
| IRFP450NPBF | IRFP450NPBF: An N-channel power MOSFET capable of handling up to 500 volts and 14 amps under specified conditions | Siliconix | 3~7 Days | 6,661 | ||
| IRFP044N | The IRFP044N is classified as an N-channel MOSFET, capable of conducting up to 53A and with a voltage tolerance of 55V | Infineon Technologies | 3~7 Days | 5,530 | ||
| IDW30G65C5FKSA1 | IDW30G65 Diode - CoolSiC Schottky | Infineon Technologies | 3~7 Days | 7,388 | ||
| IXFH150N17T2 | N-channel 175V 150A Power MOSFET in TO-247AD package | Ixys Integrated Circuits Division | 3~7 Days | 5,322 | ||
| IXFH12N100F | 3-Pin (3+Tab) configuration suitable for high voltage applications | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 7,201 | |
| IXTV03N400S | High voltage switching transistor | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 7,760 | |
| IXFX30N100Q2 | Power transistor with N-type channel, designed for high voltage applications and capable of handling up to 30A of current | Ixys Integrated Circuits Division | 3~7 Days | 6,395 | ||
| IXTH36N50P | With a current capacity of 36.0 Amps, a voltage tolerance of 500 V, and an on-resistance of 0.17 Ohms, product IXTH36N50P is an efficient MOSFET | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 7,957 | |
| IXTH7P50 | High-Voltage P-Channel MOSFET with 7A Current Capability in TO-247AD Package | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,946 | |
| IHW20N120R3 | N-Channel IGBT with 40A current and 1200V breakdown voltage | Infineon Technologies | OBSOLETE | 3~7 Days | 8,206 | |
| HER3005PT | The HER3005PT rectifier diode, with its robust design and high-quality materials, ensures reliable operation and longevity in electronic circuits | Taiwan Semiconductor Corporation | ACTIVE | 3~7 Days | 7,410 | |
| HFA32PA120C | Alternatives recommended for HFA32PA120C | Siliconix | OBSOLETE | 3~7 Days | 5,755 | |
| FQH18N50V2 | ROHS-compliant 500V 20A MOSFET for high-power applications | Fairchild Semiconductor | 3~7 Days | 6,356 | ||
| DSA80C45HB | Technical Specifications: DSA80C45HB features Schottky Diodes & Rectifiers engineered for 80 Amps and 45V operation | Ixys Integrated Circuits Division | 3~7 Days | 4,514 | ||
| DSSK50-01A | IXYS TO247AD 100V 2*25A SCHOTTKY DIODE | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,504 | |
| DSEC60-03AR | 300V 30A 30ns 3-Pin Rectifier Diode Switching ISOPLUS 247 | Ixys Integrated Circuits Division | 3~7 Days | 5,537 | ||
| DSEE30-12A | Diode with 1 Phase and 1200V V(RRM) Voltage Rating | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 7,756 |
Additional Package/Case