2N7002LT3G
SOT23, N-Channel MOSFET - 60V 115MA 7.5Ohm SOT23, N-Ch Mosfet - 60V 115MA 7.5O, SOT-23 (TO-236) 3 LEAD, 10000-REEL2N7002LT3G
SOT23, N-Channel MOSFET - 60V 115MA 7.5Ohm SOT23, N-Ch Mosfet - 60V 115MA 7.5O, SOT-23 (TO-236) 3 LEAD, 10000-REEL
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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2N7002LT3G DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
10 | $0.048 | $0.48 |
100 | $0.039 | $3.90 |
300 | $0.035 | $10.50 |
1000 | $0.032 | $32.00 |
5000 | $0.029 | $145.00 |
10000 | $0.028 | $280.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The 2N7002LT3G is a single N-Channel MOSFET with a maximum drain current of 115 mA. It is available in a TO-236-3, SC-59, and SOT-23-3 package and has a maximum power dissipation of 300 mW. It has a maximum drain-source voltage of 60 V and an operating temperature range of -55 C to +125 C.Features:• Maximum drain current of 115 mA• Maximum power dissipation of 300 mW• Maximum drain-source voltage of 60 V• Operating temperature range of -55 C to +125 C• Available in a TO-236-3, SC-59, and SOT-23-3 packageApplications:The 2N7002LT3G is suitable for use in a variety of applications including power management, motor control, and switching applications. It is also suitable for use in automotive, industrial, and consumer electronics.
Key Features
- Low Input Capacitance
- High Current Switching Frequency
- Silicon Nitride Passivated Junction
- Pulse Width Modulation Compatible
- High Power Density
- Hermetically Sealed Package
Application
- Signal Amplification Module
- Automotive Electronics
- Energy Saving Solution
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Part Life Cycle Code | Active |
Part Package Code | SOT-23 (TO-236) 3 LEAD | Pin Count ! | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 77 Weeks | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (Abs) (ID) | 0.115 A |
Drain Current-Max (ID) | 0.115 A | Drain-source On Resistance-Max | 7.5 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 5 pF |
JEDEC-95 Code | TO-236 | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.3 W | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Finish | MATTE TIN |
Terminal Form ! | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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