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BSS816NW
With its enhancement-mode architecture, this N-channel FET offers improved efficiency and reduced power consumptio
BSS816NW
With its enhancement-mode architecture, this N-channel FET offers improved efficiency and reduced power consumptio
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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BSS816NW DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Infineon Technologies introduces the game-changing BSS816NW MOSFET series, raising the bar for quality and performance in automotive and industrial applications. Boasting a comprehensive portfolio of N- and P-Channel Small Signal MOSFETs in industry-standard packages, these components deliver unmatched reliability and manufacturing capacity to meet and exceed the highest industry standards. Whether you're focused on improving LED lighting solutions, enhancing ADAS capabilities, optimizing body control units, streamlining SMPS operations, or refining motor control systems, the BSS816NW MOSFET is the ultimate choice for driving innovation and efficiency in your projects
Key Features
- N-channel MOSFET transistor
- 60V drain-source voltage
- Low on-resistance of 0.065 ohms
- Small footprint SOT223 package
- Suitable for various switching applications
- Avalanche energy rated
Application
- Automotive power systems
- Industrial control devices
- Switching regulator circuits
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| IDpuls max | 5.6 A | VGS(th) max | 0.75 V |
| VGS(th) min | 0.3 V | RthJA max | 250.0 K/W |
| Ptot max | 0.5 W | VDS max | 20.0 V |
| Package | SOT-323 | RDS (on) max | 160.0 mΩ |
| Special Features | Small Signal | Polarity | N |
| ID max | 1.4 A | Operating Temperature min | -55.0 °C |
| Operating Temperature max | 150.0 °C |
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