BUK9Y107-80E
LFPAK56 MOSFET with N-Channel polarity, rated for 80V and 11.8ABUK9Y107-80E
LFPAK56 MOSFET with N-Channel polarity, rated for 80V and 11.8A
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Service & Packaging
Service & Packaging
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BUK9Y107-80E DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
BUK9Y107-80E is a N-channel enhancement mode field-effect power transistor manufactured by Nexperia. It is designed for use in applications requiring high efficiency and low ON-state resistance. The transistor has a voltage rating of 80V and can handle a continuous drain current of 65A, making it suitable for various power switching applications.The BUK9Y107-80E has a low ON-state resistance of 6.3 mΩ, which helps to minimize power losses and improve system efficiency. It also has a high current handling capability, allowing it to handle high power levels without overheating.The transistor is housed in a TO-220AB package, which provides good thermal performance and allows for easy mounting on a heatsink. It operates over a wide temperature range of -55°C to 175°C, making it suitable for use in a variety of environmental conditions.
Key Features
- 800V N-channel MOSFET
- 107mΩ low on-resistance
- Advanced Trench technology
- Low gate charge
- Low reverse recovery charge
- Fast switching speed
- TO-220AB package
- High reliability and rugged design
- Suitable for a wide range of applications
Application
- Power management in industrial and automotive applications
- Switching devices in telecommunication equipment
- Motor control in robotics and automation systems
- Voltage regulation in consumer electronics
- Power supply units in medical devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Additional Feature ! | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 9.4 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 80 V | Drain Current-Max (ID) | 11.8 A |
Drain-source On Resistance-Max | 0.107 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MO-235 | JESD-30 Code | R-PSSO-G4 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 47 A | Reference Standard | AEC-Q101; IEC-60134 |
Surface Mount ! | YES | Terminal Finish | TIN |
Terminal Form ! | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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