H5TQ1G63DFR-11C
High-density DDR DRAM module for industrial applicationH5TQ1G63DFR-11C
High-density DDR DRAM module for industrial application
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Manufacturer Part # : H5TQ1G63DFR-11C
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Brand: Sk Hynix Inc
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Product Categories : Memory
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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About Payment
We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.
If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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Example
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Tape and Reel
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Cut Tape
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Tube or Tray
H5TQ1G63DFR-11C DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Introduction to H5TQ1G63DFR-11C
The H5TQ1G63DFR-11C is a high-speed CMOS Mobile DDR (Double Data Rate) SDRAM manufactured by SK Hynix. This SDRAM is designed to provide high-speed and efficient memory performance for mobile and embedded applications. With a capacity of 1 Gigabit (1 Gb) and a data rate of 1.6 Gbps, the H5TQ1G63DFR-11C offers reliable and power-efficient memory solutions for mobile devices, automotive electronics, and other space-constrained systems.
Specs and Features
- Memory Type: Mobile DDR SDRAM offering high-speed data transfer for mobile and embedded applications.
- Capacity: 1 Gb capacity for storing a large amount of data in a compact form factor.
- Data Rate: 1.6 Gbps data rate for rapid data access and transfer.
- Power Efficiency: Low power consumption for extended battery life in mobile devices.
- Operating Voltage: Supports a range of operating voltages, making it suitable for various mobile platforms.
- Package Type: Available in compact and space-saving packaging for integration into small form factor devices.
Application and Uses
The H5TQ1G63DFR-11C is ideal for applications requiring high-speed and power-efficient memory:
- Mobile Devices: Used in smartphones, tablets, and portable consumer electronics for high-speed data storage and access.
- Automotive Infotainment: Integrated into automotive entertainment and navigation systems for reliable and fast data processing.
- Embedded Systems: Applied in IoT devices, industrial controllers, and smart appliances for efficient data handling.
- Portable Gaming Consoles: Utilized in handheld gaming devices for seamless and responsive gaming experiences.
Equivalent Part
For similar functionalities, consider these alternatives to the H5TQ1G63DFR-11C:
- MT47H64M16HR-25E: Mobile DDR SDRAM with high-speed performance and low power consumption for mobile and embedded applications.
- IS43LD16128G-7BLI: Low-power DDR2 SDRAM offering efficient memory solutions for space-constrained systems.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | SK HYNIX INC | Part Package Code | BGA |
Package Description | TFBGA, BGA96,9X16,32 | Pin Count ! | 96 |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.32 |
Access Mode ! | MULTI BANK PAGE BURST | Access Time-Max | 20 ns |
Additional Feature ! | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 900 MHz |
I/O Type | COMMON | Interleaved Burst Length | 4,8 |
JESD-30 Code | R-PBGA-B96 | JESD-609 Code | e1 |
Length | 13 mm | Memory Density | 1073741824 bit |
Memory IC Type | DDR3 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 96 | Number of Words | 67108864 words |
Number of Words Code | 64000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Organization | 64MX16 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TFBGA | Package Equivalence Code | BGA96,9X16,32 |
Package Shape | RECTANGULAR | Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Cel) | 260 | Power Supplies ! | 1.5 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 4,8 | Standby Current-Max | 0.01 A |
Supply Current-Max | 0.22 mA | Supply Voltage-Max (Vsup) | 1.575 V |
Supply Voltage-Min (Vsup) | 1.425 V | Supply Voltage-Nom (Vsup) | 1.5 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | OTHER | Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal Form ! | BALL | Terminal Pitch ! | 0.8 mm |
Terminal Position | BOTTOM | Time@Peak Reflow Temperature-Max (s) | 20 |
Width | 7.5 mm |
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