HY5DU121622DTP-D43
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66HY5DU121622DTP-D43
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
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Service & Packaging
Service & Packaging
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HY5DU121622DTP-D43 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The Hynix HY5DV641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.FEATURES •3.3V for VDDand 2.5V for VDDQpower supply • All inputs and outputs are compatible with SSTL_2 interface • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch • Fully differential clock inputs (CK, /CK) operation • Double data rate interface • Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) • Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe • All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock • Write mask byte controls by LDM and UDM • Programmable /CAS Latency 3 / 4 supported • Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode • Internal 4 bank operations with single pulsed /RAS • tRAS Lock-Out function supported • Auto refresh and self refresh supported • 4096 refresh cycles / 64ms • Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS
Key Features
- 3.3V for VDDand 2.5V for VDDQpower supply
- All inputs and outputs are compatible with SSTL_2 interface
- JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch
- Fully differential clock inputs (CK, /CK) operation
- Double data rate interface
- Source synchronous - data transaction aligned to bidirectional data strobe (DQS)
- x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O
- Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ)
- Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe
- All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock
- Write mask byte controls by LDM and UDM
- Programmable /CAS Latency 3 / 4 supported
- Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode
- Internal 4 bank operations with single pulsed /RAS
- tRAS Lock-Out function supported
- Auto refresh and self refresh supported
- 4096 refresh cycles / 64ms
- Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Part Package Code | TSOP2 | Pin Count ! | 66 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.28 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 0.7 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 200 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e6 | Length | 22.22 mm |
Memory Density | 536870912 bit | Memory IC Type | DDR1 DRAM |
Memory Width | 16 | Moisture Sensitivity Level | 3 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 66 | Number of Words | 33554432 words |
Number of Words Code | 32000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 32MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSSOP |
Package Equivalence Code | TSSOP66,.46 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Peak Reflow Temperature (Cel) | 260 |
Power Supplies ! | 2.5 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 8192 | Seated Height-Max | 1.194 mm |
Self Refresh | YES | Sequential Burst Length | 2,4,8 |
Standby Current-Max | 0.01 A | Supply Current-Max | 0.36 mA |
Supply Voltage-Max (Vsup) | 2.7 V | Supply Voltage-Min (Vsup) | 2.4 V |
Supply Voltage-Nom (Vsup) | 2.6 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Finish | TIN SILVER BISMUTH | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.65 mm | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Width | 10.16 mm |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is HY5DU121622DTP-D43?
The HY5DU121622DTP-D43 is a 256Mb Double Data Rate 2 (DDR2) Synchronous DRAM (SDRAM) module designed by SK Hynix. It is commonly used in computer systems, networking equipment, and other digital devices requiring high-speed and high-density memory solutions.
How Does HY5DU121622DTP-D43 Work?
The HY5DU121622DTP-D43 works by providing high-speed access to stored data in a synchronous manner, allowing for efficient data transfers between the memory module and the processing units. The DDR2 technology enables data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to traditional SDRAM.
How Many Pins does HY5DU121622DTP-D43 have and What are the Functions of the Pinout Configuration?
The HY5DU121622DTP-D43 is housed in a 84-ball FBGA (Fine-pitch Ball Grid Array) package. The pinout configuration includes:
- DQ: Data input/output pins.
- DM: Data mask pins for write data.
- ADDR: Address input pins.
- BA: Bank address pins.
- CAS#: Column address strobe control pin.
- RAS#: Row address strobe control pin.
- WE#: Write enable control pin.
- CLK: Clock input pin.
- CS#: Chip select control pin.
- CKE: Clock enable control pin.
- ODT: On-die termination control pin.
- VDD, VSS: Power supply and ground pins.
What are the Pros and Cons of HY5DU121622DTP-D43?
Pros:
- High Density: Offers a large memory capacity for data storage and processing.
- High Speed: Provides fast data transfer rates, enhancing system performance.
- DDR2 Technology: Utilizes double data rate transfer for improved bandwidth.
- Compact Package: The FBGA package offers a space-efficient and reliable memory solution.
Cons:
- Obsolete Technology: DDR2 SDRAM may be considered outdated compared to newer generations such as DDR3 and DDR4.
- Compatibility: May not be compatible with newer systems designed for DDR3 or DDR4 memory modules.
- Power Consumption: DDR2 modules may consume more power compared to newer, low-voltage options.
Are There Any Equivalents/Alternatives to HY5DU121622DTP-D43 for Recommendation?
Alternatives to the HY5DU121622DTP-D43 include newer DDR3 and DDR4 SDRAM modules from various manufacturers, such as Samsung, Micron, and Kingston.
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