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HY5DU12822BT-D43
DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
HY5DU12822BT-D43
DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
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Service & Packaging
Service & Packaging
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HY5DU12822BT-D43 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The Hynix HY5DV641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.FEATURES •3.3V for VDDand 2.5V for VDDQpower supply • All inputs and outputs are compatible with SSTL_2 interface • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch • Fully differential clock inputs (CK, /CK) operation • Double data rate interface • Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) • Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe • All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock • Write mask byte controls by LDM and UDM • Programmable /CAS Latency 3 / 4 supported • Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode • Internal 4 bank operations with single pulsed /RAS • tRAS Lock-Out function supported • Auto refresh and self refresh supported • 4096 refresh cycles / 64ms • Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS
Key Features
- 3.3V for VDDand 2.5V for VDDQpower supply
- All inputs and outputs are compatible with SSTL_2 interface
- JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch
- Fully differential clock inputs (CK, /CK) operation
- Double data rate interface
- Source synchronous - data transaction aligned to bidirectional data strobe (DQS)
- x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O
- Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ)
- Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe
- All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock
- Write mask byte controls by LDM and UDM
- Programmable /CAS Latency 3 / 4 supported
- Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode
- Internal 4 bank operations with single pulsed /RAS
- tRAS Lock-Out function supported
- Auto refresh and self refresh supported
- 4096 refresh cycles / 64ms
- Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | No | Part Life Cycle Code | Obsolete |
| Part Package Code | TSOP2 | Pin Count ! | 66 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| HTS Code ! | 8542.32.00.28 | Access Mode ! | FOUR BANK PAGE BURST |
| Access Time-Max | 0.7 ns | Additional Feature ! | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 200 MHz | I/O Type | COMMON |
| Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
| Length | 22.225 mm | Memory Density | 536870912 bit |
| Memory IC Type | DDR DRAM | Memory Width | 8 |
| Number of Functions | 1 | Number of Ports ! | 1 |
| Number of Terminals | 66 | Number of Words | 67108864 words |
| Number of Words Code | 64000000 | Operating Mode ! | SYNCHRONOUS |
| Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
| Organization | 64MX8 | Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | Package Code | TSOP2 |
| Package Equivalence Code | TSSOP66,.46 | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Power Supplies ! | 2.6 V | Qualification Status ! | Not Qualified |
| Refresh Cycles | 8192 | Seated Height-Max | 1.194 mm |
| Self Refresh | YES | Sequential Burst Length | 2,4,8 |
| Standby Current-Max | 0.01 A | Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.5 V | Supply Voltage-Nom (Vsup) | 2.6 V |
| Surface Mount ! | YES | Technology | CMOS |
| Temperature Grade ! | COMMERCIAL | Terminal Form ! | GULL WING |
| Terminal Pitch ! | 0.65 mm | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Width | 10.16 mm |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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