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IRFI4410Z
isc N-Channel MOSFET Transistor
IRFI4410Z
isc N-Channel MOSFET Transistor
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Service & Packaging
Service & Packaging
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Initiate the application within 90 days from the shipment date.
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IRFI4410Z DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON)for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Lead-Free Package
Key Features
- Integrated Half-Bridge Package
- Reduces the Part Count by Half
- Facilitates Better PCB Layout
- Key Parameters Optimized for Class-D Audio Amplifier Applications
- Low RDS(ON)for Improved Efficiency
- Low Qg and Qsw for Better THD and Improved Efficiency
- Low Qrr for Better THD and Lower EMI
- Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier
- Lead-Free Package
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | IR | Product Category ! | FETs - Single |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRFI4410Z?
The IRFI4410Z is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is an N-channel enhancement mode transistor with high current handling capabilities, making it suitable for power management and switching applications in various electronic circuits.
How Does IRFI4410Z Work?
The IRFI4410Z operates as a switch or amplifier in electronic circuits. As an N-channel MOSFET, it can control the flow of power between the source and drain terminals by the voltage applied to the gate terminal. It offers low on-state resistance and fast switching speeds, enabling efficient power management in different applications.
How Many Pins does IRFI4410Z have and What are the Functions of the Pinout Configuration?
The IRFI4410Z is housed in a TO-220AB package, which typically includes three pins:
- Gate (G): Controls the flow of current between the source and drain terminals.
- Drain (D): Connects to the load or power supply.
- Source (S): Connects to the ground or common reference point.
What are the Pros and Cons of IRFI4410Z?
Pros:
- High Current Handling: Capable of handling high currents for power applications.
- Low On-State Resistance: Minimizes power losses and heat generation during operation.
- Fast Switching Speeds: Enables efficient power management and control.
- Robust and Reliable: Provides stable performance under various operating conditions.
Cons:
- Drive Voltage Requirement: May require a relatively high gate-source voltage for full enhancement mode operation.
- Gate Capacitance: The gate capacitance can affect the switching speed and drive requirements in certain applications.
Are There Any Equivalents/Alternatives to IRFI4410Z for Recommendation?
Some equivalents to the IRFI4410Z include the IRF4905 from Infineon Technologies and the NDP6020P from ON Semiconductor.
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