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IRFS3107
N-Channel Silicon Metal-oxide Semiconductor FET
IRFS3107
N-Channel Silicon Metal-oxide Semiconductor FET
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Service & Packaging
Service & Packaging
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IRFS3107 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRFS3107 is a power MOSFET transistor designed for high efficiency power management applications. It has a maximum drain-source voltage (VDS) of 75V and a continuous drain current (ID) of 140A. The on-resistance (RDS(on)) of the IRFS3107 is typically 4.3mΩ, which ensures low power dissipation and high efficiency in high current applications.This MOSFET transistor features a TO-220AB package type, which allows for easy mounting and heat dissipation. It also has a low gate charge (Qg) of 61nC, which enables fast switching speeds and reduced power losses.The IRFS3107 is suited for a wide range of applications, including power supplies, motor controls, and automotive systems. It is designed to operate in a variety of conditions, making it versatile and reliable for demanding environments.
Key Features
- Fast switching speeds
- Low on-resistance
- Low gate charge
- 100% avalanche tested
- High current capability
- Low input capacitance
- Compatible with standard MOSFET drivers
- RoHS compliant
- High power dissipation
- Standard package for easy mounting
Application
- Power supplies
- Motor control
- Lighting
- DC-DC converters
- Battery chargers
- Audio amplifiers
- Induction heating
- UPS systems
- Solar inverters
- Electric vehicles
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| RthJC max | 0.4 K/W | Tj max | 175.0 °C |
| VDS max | 75.0 V | Mounting | SMD |
| Package | D2PAK (TO-263) | Polarity | N |
| Moisture Sensitivity Level | 1 | Ptot max | 370.0 W |
| VGS max | 20.0 V | RDS (on) max | 3.0 mΩ |
| VGS(th) max | 4.0 V | VGS(th) min | 2.0 V |
| ID max | 230.0 A | Operating Temperature max | 175.0 °C |
| Operating Temperature min | -55.0 °C |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRFS3107?
The IRFS3107 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Infineon Technologies. It is ideal for high power switching applications in power supplies, motor control, and automotive systems.
How Does IRFS3107 Work?
The IRFS3107 works by controlling the flow of current between the source and drain terminals using an electric field. When a voltage is applied to the gate terminal, it creates an electric field that modulates the conductivity of the channel, allowing the transistor to switch and control high power loads.
How Many Pins does IRFS3107 have and What are the Functions of the Pinout Configuration?
The IRFS3107 is housed in a TO-220 package. The pinout configuration includes:
- GATE: Gate control terminal.
- DRAIN: Output or drain terminal.
- SOURCE: Input or source terminal.
What are the Pros and Cons of IRFS3107?
Pros:
- High Power Handling: Capable of switching high power loads.
- Low ON Resistance: Provides low conduction losses when in the fully on state.
- Robust: Designed to withstand high voltages and currents.
- Wide Application Range: Suitable for a variety of high power applications.
Cons:
- Gate Drive Requirement: May require careful consideration of gate drive voltage and current for optimal performance.
- Heat Dissipation: High power handling may require efficient heat sinking or cooling.
Are There Any Equivalents/Alternatives to IRFS3107 for Recommendation?
Similar power MOSFET alternatives to the IRFS3107 include the FDPF18N50 from Fairchild Semiconductor and the HUF76629P3 from Vishay.
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