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IRFS4229
50V 45A Power Transistor
IRFS4229
50V 45A Power Transistor
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Service & Packaging
Service & Packaging
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IRFS4229 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRFS4229 is a N-channel power MOSFET transistor designed for high-performance applications such as power supplies, motor controls, and inverters. It features a drain-source voltage rating of 250V, a continuous drain current of 38A, and a low on-resistance of 0.011 ohms. The IRFS4229 is housed in a TO-220AB package, making it suitable for easy mounting on a PCB.This MOSFET transistor has a high input capacitance of 3300pF and a gate charge of 34nC, enabling fast switching speeds and efficient operation. It also has a low reverse recovery charge of 1.5uC and a low thermal resistance, allowing for reliable and stable performance even under high-temperature conditions.Additionally, the IRFS4229 is RoHS compliant, ensuring that it meets environmental standards for lead-free manufacturing. It is also designed to be rugged and durable, with a maximum junction temperature of 175°C and a maximum operating temperature of 150°C.
Key Features
- Dual N-channel MOSFET
- Enhancement mode
- Low on-resistance
- Fast switching speeds
- Low gate charge
- 400V drain-source voltage
- 8A continuous drain current
- 2.9V maximum gate-source voltage
- Small package size
Application
- Motor control
- Switching power supplies
- Industrial automation
- Lighting control
- Audio amplifiers
- DC-DC converters
- Battery charging circuits
- Solar inverters
- Electric vehicles
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Mounting | SMD | Package | D2PAK (TO-263) |
| Ptot max | 330.0 W | Tj max | 175.0 °C |
| VGS max | 30.0 V | Moisture Sensitivity Level | 1 |
| Polarity | N | RthJC max | 0.45 K/W |
| VDS max | 250.0 V | RDS (on) max | 48.0 mΩ |
| VGS(th) max | 5.0 V | VGS(th) min | 3.0 V |
| ID max | 45.0 A | Operating Temperature max | 175.0 °C |
| Operating Temperature min | -40.0 °C | Battery voltage | 144-200 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRFS4229?
The IRFS4229 is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is part of the StrongIRFET™ family and is ideal for various high-power applications such as motor control, power supplies, and battery management.
How Does IRFS4229 Work?
The IRFS4229 works as a high-power MOSFET, providing efficient switching and power handling capabilities. It utilizes a metal-oxide gate structure to control the flow of current, making it suitable for high-current applications. The MOSFET's low on-state resistance and high current handling capacity enable efficient power conversion and control.
How Many Pins does IRFS4229 have and What are the Functions of the Pinout Configuration?
The IRFS4229 is housed in a TO-220AB package with 3 pins. The pinout configuration includes:
- GATE: Gate pin for controlling the MOSFET's on/off state.
- DRAIN: The drain pin, through which the high-current flow is managed.
- SOURCE: Source pin, connected to the return path for the current flow.
What are the Pros and Cons of IRFS4229?
Pros:
- High Power Handling: Capable of handling high currents and voltages, suitable for power applications.
- Low On-State Resistance: Provides efficient power conversion with minimal power losses.
- Robust Construction: Designed for reliability and rugged performance in harsh environments.
- Simple Drive Requirements: Can be easily controlled by standard logic-level signals.
Cons:
- Heat Dissipation: May require heatsinking or thermal management in high-power applications.
- Gate Drive Consideration: Requires attention to gate drive voltage and current for optimal performance.
- Component Size: The TO-220AB package may be relatively large for space-constrained designs.
Are There Any Equivalents/Alternatives to IRFS4229 for Recommendation?
- The IRFZ44N from Infineon Technologies is a similar Power MOSFET with a different package and electrical characteristics.
- Alternatives to the IRFS4229 include the FDP7030L from Fairchild Semiconductor and the STP75NF75 from STMicroelectronics.
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