IRG4PC50UPBF
IRG4PC50UPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high power applications, featuring a 55A current rating in a TO-247 packageIRG4PC50UPBF
IRG4PC50UPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high power applications, featuring a 55A current rating in a TO-247 package
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Manufacturer Part # : IRG4PC50UPBF
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Package/Case: TO247-3
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Brand: Infineon Technologies
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Product Categories : Single IGBTs
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Shipping & Payment
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Service & Packaging
Service & Packaging
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IRG4PC50UPBF DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $8.818 | $8.82 |
10 | $7.838 | $78.38 |
30 | $7.241 | $217.23 |
100 | $6.740 | $674.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
VCES= 600VVCE(on) typ. = 1.65V@VGE = 15V, IC = 27AFeatures• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching,>200 kHz in resonant mode• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3• Industry standard TO-247AC package• Lead-FreeBenefits• Generation 4 IGBTs offer highest efficiency available• IGBTs optimized for specified application conditions• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Key Features
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching,>200 kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard TO-247AC package
- Lead-Free
- Benefits
- Generation 4 IGBTs offer highest efficiency available
- IGBTs optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Application
- Power Management
- Motor Drive & Control
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 55 A |
Pd - Power Dissipation | 200 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Brand | Infineon Technologies |
Continuous Collector Current Ic Max | 27 A | Gate-Emitter Leakage Current | 100 nA |
Height | 20.7 mm (Max) | Length | 15.87 mm (Max) |
Product Type ! | IGBT Transistors | Factory Pack Quantity | 400 |
Subcategory | IGBTs | Width | 5.31 mm (Max) |
Unit Weight | 1.340411 oz |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRG4PC50UPBF?
The IRG4PC50UPBF is an Insulated Gate Bipolar Transistor (IGBT) designed by Infineon Technologies. It is a high-performance power semiconductor device commonly used in motor control, power conversion, and renewable energy applications.
How Does IRG4PC50UPBF Work?
The IRG4PC50UPBF operates by controlling high power and voltage levels with a combination of MOSFET and BJT (bipolar junction transistor) structures. It functions as a high-speed switch to convert electrical power efficiently in various industrial and automotive systems, providing an optimal balance between conduction and switching losses.
How Many Pins does IRG4PC50UPBF have and What are the Functions of the Pinout Configuration?
The IRG4PC50UPBF is typically packaged in a TO-247AC (Transistor Outline) package. The pinout configuration includes:
- GATE: Gate control pin for turning the IGBT on and off.
- C (Collector): Collector pin for the high-voltage connection.
- E (Emitter): Emitter pin for the low-voltage connection.
- Base/Ground: Some IGBTs may have a base or ground pin for specific applications.
What are the Pros and Cons of IRG4PC50UPBF?
Pros:
- High Power Handling: Capable of handling high voltage and current levels in power electronics applications.
- Fast Switching Speed: Provides fast turn-on and turn-off times for efficient power conversion.
- Reliability: Offers robust performance and high reliability for industrial and automotive systems.
- High Temperature Operation: Suitable for operation in elevated temperature environments.
- Industry Standard Package: Packaged in a widely used TO-247 package for ease of integration.
Cons:
- Gate Drive Complexity: Requires careful attention to gate drive circuit design for optimal performance.
- Noise Considerations: IGBTs can introduce electromagnetic interference (EMI) and require proper filtering.
- Heat Dissipation: High power handling capability necessitates effective thermal management.
Are There Any Equivalents/Alternatives to IRG4PC50UPBF for Recommendation?
- The IRG7PH42UPBF is a similar IGBT from Infineon Technologies with higher current handling capability.
- Alternatives to the IRG4PC50UPBF include the FGA25N120ANTD from Fairchild Semiconductor and the AUIRG4PH50S IGBT from International Rectifier.
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