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Specification Comparison: IRG4PC50UDPBF vs IRG4PC50UPBF vs IRG4PC50WPBF
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Part Number
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| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO247-3 | TO247-3 | TO247-3 |
| Description | Compact design enables dense packaging in demanding applications | IRG4PC50UPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high power applications, featuring a 55A current rating in a TO-247 package | TO247 IRG4PC50W IGBT 55A |
| Stock | 5544 | 4057 | 4300 |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Details | Details | Details |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector-Emitter Saturation Voltage | 2 V | 2 V | 2.3 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | - 20 V, + 20 V | - 20 V, + 20 V |
| Continuous Collector Current at 25 C | 55 A | 55 A | 55 A |
| Pd - Power Dissipation | 200 W | 200 W | 200 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Height | 20.7 mm | 20.7 mm (Max) | 20.7 mm |
| Length | 15.87 mm | 15.87 mm (Max) | 15.87 mm |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 400 | 400 | 400 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Width | 5.31 mm | 5.31 mm (Max) | 5.31 mm |
| Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |
| Maximum Operating Temperature | + 150 C | ||
| Continuous Collector Current Ic Max | 27 A | ||
| Gate-Emitter Leakage Current | 100 nA |
Part Number
Start with: IRG4P
Part Number "IRG4P" returned 20 results; all results matched and started with "IRG4P".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| IRG4PH50KD |
45A Insulated Gate Bipolar Transistor, 1200V N-Channel, TO-247AC |
Infineon Technologies Ag | TO-247AC | 3~7 Days | 6,580.00 | ||
| IRG4PH50S |
The IRG4PH50S is a high-performance IGBT chip with a N-channel design, capable of handling high voltages up to 1200V and currents up to 57A |
Infineon Technologies Ag | TO-247AC | 3~7 Days | 7,278.00 | ||
| IRG4PC50F |
Channel Insulated Gate Bipolar Transistor, 70A Collector Current, 600V Breakdown Voltage, TO-247AC, TO-3P Package, 3 Pin |
Infineon Technologies Ag | TO-247AC-3 | 3~7 Days | 7,146.00 | ||
| IRG4PC50FD |
0 ampere collector current, 600 volt collector-source breakdown voltage, N-channel type, TO-247AC and TO-3P package with 3 pins |
Infineon Technologies Ag | TO-247AC-3 | 3~7 Days | 7,263.00 | ||
| IRG4PC40KD |
IGBT IRG4PC40KD 42A TO247 |
Infineon Technologies Ag | TO-247AC | 3~7 Days | 3,986.00 | ||
| IRG4PSC71UD |
High Current N-Channel IGBT with 600V Voltage Rating |
Infineon Technologies | TO-274AA-3 | 3~7 Days | 5,444.00 | ||
| IRG4PH40KD |
This IGBT chip is designed for high voltage and current applications, providing reliable performance |
IR | TO-247 | 3~7 Days | 6,715.00 | ||
| IRG4PH40U |
N-channel insulated gate bipolar transistor (IGBT) chip with a voltage rating of 1200V |
IR | TO-3P | 3~7 Days | 4,022.00 | ||
| IRG4PH50SPBF |
1200V 57A 200W 3-Pin(3+Tab) |
Infineon Technologies | TO247-3 | 3~7 Days | 6,075.00 | ||
| IRG4PH40UPBF |
High Power IGBT Transistors with UltraFast Response Time up to 40kHz |
Infineon | TO247 | Obsolete | 3~7 Days | 6,988.00 | |
| IRG4PC40WPBF |
Warp Technology IGBT Transistors for Frequencies of 60-150kHz |
Infineon | TO247 | Active | 3~7 Days | 4,961.00 | |
| IRG4PC40UDPBF |
IGBT Transistors for high-frequency applications |
Infineon Technologies | TO247-3 | Obsolete | 3~7 Days | 5,684.00 | |
| IRG4PC50KD |
Featuring an N-channel design |
IR | TO-247 | 3~7 Days | 7,830.00 | ||
| IRG4PF50WPBF |
Infineon IRG4PF50WPBF IGBT Transistor |
Infineon | TO-247-3 | 3~7 Days | 4,017.00 | ||
| IRG4PC40S |
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN |
Infineon Technologies Ag | TO-247AC | 3~7 Days | 6,224.00 | ||
| IRG4PC30UD |
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN |
IR | TO-247 | 3~7 Days | 6,182.00 | ||
| IRG4PSH71KD |
Three-Pin TO-274AA Package |
Infineon Technologies | TO-274AA | OBSOLETE | 3~7 Days | 7,575.00 | |
| IRG4PSC71K |
N-Channel IGBT Chip with TO-274AA Packaging |
Infineon Technologies | TO-274AA | OBSOLETE | 3~7 Days | 6,253.00 | |
| IRG4PH40K |
TO-247AC Tube Trans IGBT Chip, N-CH 1200V 30A 160W 3-Pin(3+Tab) |
Infineon Technologies | TO-247-3 | OBSOLETE | 3~7 Days | 6,094.00 | |
| IRG4PH30KD |
IRG4PH30KD - IGBT |
Infineon Technologies | TO-247-3 | OBSOLETE | 3~7 Days | 8,313.00 |