K4B1G1646G-BCK0

Name: K4B1G1646G-BCK0
Rating: 4.5 (10 reviews)

The K4B1G1646G-BCK0 is a dynamic random-access memory (DRAM) chip produced by Samsung

3,677 Effective Inventory

K4B1G1646G-BCK0

Effective Inventory3,677

The K4B1G1646G-BCK0 is a dynamic random-access memory (DRAM) chip produced by Samsung

Manufacturer Part # : K4B1G1646G-BCK0
Package/Case: FBGA-96
Brand: SAMSUNG
Product Categories : Controllers

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

Example

Tape and Reel

Cut Tape

Tube or Tray

K4B1G1646G-BCK0 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for K4B1G1646G-BCK0 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

K4B1G1646G-BCK0 is a specific model of DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) manufactured by Samsung. It features a capacity of 8 gigabits (Gb), which translates to 1 gigabyte (GB) per chip. With a configuration of 16 chips, it achieves a total capacity of 2 GB. The "BCK0" part of the model number signifies the speed grade, indicating its maximum data transfer rate of 2133 megatransfers per second (MT/s). This memory module operates at a low voltage of 1.2 volts, enhancing energy efficiency. Designed for compatibility with various computing devices, it adheres to JEDEC standards for DDR4 memory. Its compact form factor and efficient performance make it suitable for a wide range of applications, from personal computers to servers and networking devices. Additionally, its reliability and high-speed capabilities contribute to improved system performance and responsiveness

Key Features

1Gb DDR3 SDRAM
Memory organization: 128Mx8
Data rate: 1333Mbps
Operating voltage: 1.5V
JEDEC standard specification compliant
High-speed data transfer
Low power consumption
RoHS compliant
Lead-free technology
Available in BGA packaging

Application

Computer memory
Smartphones
Tablets
Network switches
Industrial applications
Automotive electronics
Virtual reality devices
Medical devices
Digital cameras
Solid-state drives (SSDs)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code	Yes	Rohs Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code !	8542.32.00.32
Access Time-Max	0.225 ns	Clock Frequency-Max (fCLK)	800 MHz
I/O Type	COMMON	Interleaved Burst Length	4,8
JESD-30 Code	R-PBGA-B96	JESD-609 Code	e3
Memory Density	1073741824 bit	Memory IC Type	DDR3 DRAM
Memory Width	16	Moisture Sensitivity Level	1
Number of Terminals	96	Number of Words	67108864 words
Number of Words Code	64000000	Organization	64MX16
Output Characteristics	3-STATE	Package Body Material	PLASTIC/EPOXY
Package Code	FBGA	Package Equivalence Code	BGA96,9X16,32
Package Shape	RECTANGULAR	Package Style	GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel)	260	Power Supplies !	1.5 V
Qualification Status !	Not Qualified	Refresh Cycles	8192
Sequential Burst Length	4,8	Standby Current-Max	0.01 A
Supply Current-Max	0.195 mA	Supply Voltage-Nom (Vsup)	1.5 V
Surface Mount !	YES	Technology	CMOS
Terminal Finish	MATTE TIN	Terminal Form !	BALL
Terminal Pitch !	0.8 mm	Terminal Position	BOTTOM

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K4B1G1646G-BCK0 PDF Download