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FBGA-96 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| H5TQ4G63MFR-PBC | DDR DRAM, 256MX16, 0.225ns, CMOS | Sk Hynix Inc | 3~7 Days | 7,096 | ||
| MT41K64M16TW-107IT:J | Low-voltage 1.35V FBGA tray package suitable for various applications | Micron Technology | 3~7 Days | 4,220 | ||
| MT41K256M16HA-125 IT:E | DRAM Chip DDR3L SDRAM | Micron | 3~7 Days | 7,338 | ||
| MT41K256M16LY-093:N | FBGA 96-Pin DRAM Chip for DDR3L SDRAM with 1.35V voltage | Alliance Memory | 3~7 Days | 5,739 | ||
| MT41K256M16LY-107:N | High-density memory module | Alliance Memory | 3~7 Days | 5,047 | ||
| MT41J128M8JP-15E:G | Low-power consumption and high-density design make it ideal for mobile devices | MICRON | 3~7 Days | 6,975 | ||
| H5TC8G63AMR-PBA | The H5TC8G63AMR-PBA chip is a DDR4 SDRAM module commonly used in computing devices | SKHYNIX | 3~7 Days | 6,109 | ||
| MT41K256M16TW-107XIT:P | DRAM DDR3 4G 256MX16 FBGA | MICRON | 3~7 Days | 4,397 | ||
| K4B2G1646C-HCH9 | The K4B2G1646C-HCH9 chip is a DDR4 SDRAM produced by Samsung | SAMSUNG | 3~7 Days | 7,460 | ||
| K4B1G1646G-BCK0 | The K4B1G1646G-BCK0 is a dynamic random-access memory (DRAM) chip produced by Samsung | SAMSUNG | 3~7 Days | 3,677 | ||
| MT41K512M16HA-125 IT:A | SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA (9x14) | Micron Technology | 3~7 Days | 7,715 | ||
| H5TC4G63CFR-RDA | Enhanced Memory Solution for Business and Consumer Use | Sk Hynix Inc | 3~7 Days | 3,215 | ||
| MT41K128M16JT-125 AAT:K | This product is a DRAM DDR3 module with a capacity of 2 gigabytes and a memory organization of 128MX16 in FBGA form factor | Micron Technology | 3~7 Days | 3,444 | ||
| MT41J128M16JT-125:K | Technology: DRAM | Micron Technology | ACTIVE | 3~7 Days | 6,957 | |
| MT41K256M16TW-107 XIT:P | Excellent choice for industrial and commercial use cases | Micron Technology | ACTIVE | 3~7 Days | 9,139 | |
| MT41K256M16TW-107:P | DDR3L technology | Micron | ACTIVE | 3~7 Days | 5,650 | |
| MT41K128M16JT-125:K | DDR3 128MX16 FBGA DRAM 2G | Micron Technology | ACTIVE | 3~7 Days | 6,904 | |
| H5AN8G6NAFR-VKC | Compact high-performance memory solution for demanding application | SKHYNIX | 3~7 Days | 4,831 | ||
| H5AN8G6NAFR-UHC | DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 | SKHYNIX | 3~7 Days | 5,861 | ||
| MT41K512M16HA-125:A | Cutting-edge 8GB DDR3 DRAM chip structured with 512MX16 layout and enclosed in FBGA casing" | Alliance | OBSOLETE | 3~7 Days | 8,639 | |
| D2516ECMDXGJDI-CK | Ideal for servers, workstations, and PCs that require large amounts of memory for complex tasks and data-intensive operations | KINGSTON | 3~7 Days | 6,869 | ||
| MT40A1G16RC-062E:B | Top-of-the-line DDR4 Z22A memory module | Micron Technology | Obsolete | 3~7 Days | 3,096 | |
| MT41J64M16TW-093:J | High-Density CMOS Memory Module | Micron Technology | 3~7 Days | 7,992 | ||
| H5TQ4G63AFR-RDC | CMOS technology | Sk Hynix Inc | 3~7 Days | 6,220 | ||
| MT40A1G16HBA-083E:A | DDR DRAM memory module | Micron Technology | 3~7 Days | 3,011 | ||
| H5TQ4G63MFR-H9C | The H5TQ4G63MFR-H9C is a high-performance FBGA-96 memory module suitable for a wide range of computing and networking applications | SKHYNIX | 3~7 Days | 6,603 | ||
| MT41K256M16TW-107 AIT:P TR | High-quality 1.35V DRAM chip suitable for automotive applications | Micron Technology | ACTIVE | 3~7 Days | 6,244 | |
| MT40A256M16GE-075E:B | MT40A256M16GE-075E:B DDR4 4G 256MX16 FBGA DRAM | Micron Technology | OBSOLETE | 3~7 Days | 6,191 | |
| MT41K256M16TW-107 AAT:P TR | DDR3L Technology | Micron Technology | 3~7 Days | 5,656 | ||
| H5TQ2G63DFR-PBC | The H5TQ2G63DFR-PBC is a CMOS memory module housed in a PBGA96 package, ensuring high performance and reliability | SKHYNIX | 3~7 Days | 3,073 | ||
| H5TQ1G63BFR-H9C | FPBGA-96 technology | SKHYNIX | 3~7 Days | 6,060 | ||
| MT41K128M16JT-125 IT:K | DRAM DDR3 2G 128MX16 FBGA | Micron Technology | 3~7 Days | 7,529 | ||
| EDY4016AABG-DR-F | EDY4016AABG-DR-F is a DDR4 SDRAM chip with a capacity of 16Gb. | MICRON | 3~7 Days | 4,812 | ||
| H5TC2G63FFR-11C | H5TC2G63FFR-11C is a DDR4 SDRAM chip with 2Gb density and 3200Mbps data rate. | SKHYNIX | 3~7 Days | 7,689 | ||
| MT41K128M16JT-125 AAT | MT41K128M16JT-125 AAT is a high-speed and low-power DDR3 SDRAM chip for use in various electronic devices. | MICRON | 3~7 Days | 6,947 | ||
| K4W2G1646C-HC11 | High-speed DDR DRAM with 128MX16 capacity and PBGA96 package | SAMSUNG | 3~7 Days | 5,255 | ||
| K4B8G1646Q-MYK0 | Halogen-free and eco-friendly components | SAMSUNG | 3~7 Days | 4,846 | ||
| MT41K256M16TW-107AAT:P | With its advanced design and efficient performance, this DRAM module is ideal for applications requiring a high level of memory capacity and speed | Micron Technology | 3~7 Days | 5,698 | ||
| MT40A512M16JY-083E:B | 8G DDR4 DRAM 512MX16 FBGA | Micron Technology | OBSOLETE | 3~7 Days | 7,345 | |
| MT41K256M16TW-107 XIT:P TR | SDRAM - DDR3L Memory Integrated Circuit 4 Gigabit Parallel 933 Megahertz | Micron Technology | ACTIVE | 3~7 Days | 5,180 |
Additional Package/Case