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NVH4L022N120M3S
EliteSiC Silicon Carbide MOSFET featuring 22mohm resistance, 1200V, M3S technology, TO247-4L package
NVH4L022N120M3S
EliteSiC Silicon Carbide MOSFET featuring 22mohm resistance, 1200V, M3S technology, TO247-4L package
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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NVH4L022N120M3S DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The NVH4L022N120M3S is an N-Channel electronic component designed for high power applications. It has a voltage rating of 1200 V and a continuous current rating of 68 A at a case temperature of 25°C. The power dissipation for this component is rated at 352W at a case temperature of 25°C. The package style for this component is Through Hole TO-247-4L, which is a widely used package for high-power devices due to its ability to efficiently dissipate heat. This package style also allows for easy mounting on a PCB or heat sink. The NVH4L022N120M3S is commonly used in industrial applications such as power supplies, motor control, and inverters where high power handling capabilities are required. Its N-Channel design allows for low on-state resistance and high efficiency operation.
Key Features
- Model: NVH4L022N120M3S
- Input Voltage: 120V
- Power: 22W
- Size: Not specified
- Color Temperature: Not specified
- Lumens: Not specified
- Dimmable: Not specified
- Certifications: Not specified
- Manufacturer: Not specified
Application
- On Board Charger (OBC)
- DC/DC converters for EV/HEV
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | onsemi | Product Category ! | FETs - Single |
| Series | Automotive AEC-Q101 | Technology | SiCFET (Silicon Carbide) |
| Operating-Temperature | TO-247-4L | Mounting-Type | - |
| Supplier-Device-Package | 68A (Tc) | FET-Type | 30mOhm @ 40A 18V |
| Power-Dissipation-Max | Tube | FET-Feature | 151 nC @ 18 V |
| Current-Continuous-Drain-Id-25°C | Active | RoHS | Details |
| Mounting Style | Through Hole | Package / Case | TO-247-4 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | Id - Continuous Drain Current | 68 A |
| Rds On - Drain-Source Resistance | 30 mOhms | Vgs - Gate-Source Voltage | - 10 V, + 22 V |
| Vgs th - Gate-Source Threshold Voltage | 4.4 V | Qg - Gate Charge | 151 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
| Pd - Power Dissipation | 352 W | Channel Mode | Enhancement |
| Brand | onsemi | Configuration | Single |
| Fall Time | 13 ns | Forward Transconductance - Min | 34 S |
| Product Type ! | MOSFET | Rise Time ! | 24 ns |
| Factory Pack Quantity | 30 | Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 48 ns | Typical Turn-On Delay Time | 18 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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