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SSM3J108TU
channel transistor for small signal applications
SSM3J108TU
channel transistor for small signal applications
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Service & Packaging
Service & Packaging
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Initiate the application within 90 days from the shipment date.
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SSM3J108TU DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SSM3J108TU is a P-channel enhancement mode MOSFET manufactured by Toshiba Semiconductor. It is designed for use in battery protection circuits, power management, and other low voltage applications. This MOSFET has a maximum drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -3A. It has a low on-resistance (RDS(ON)) of 0.1 ohms, which helps to minimize power loss and improve efficiency in electronic circuits. The SSM3J108TU has a threshold voltage (VGS(th)) of -1.5V, making it suitable for battery-operated devices and low-power applications.This MOSFET is housed in a compact, surface-mount package (SOT-23) which allows for easy integration into smaller electronic devices and PCB layouts. It is also RoHS compliant, meaning it meets strict environmental regulations regarding the use of hazardous materials in electronic components.
Key Features
- Low on-state resistance
- Low leakage current
- Highly efficient
- High-speed switching
- Low capacitance
Application
- Power management systems
- Mobile devices
- Portable electronics
- Networking equipment
- Automotive electronics
- Industrial control systems
- Medical equipment
- Telecommunications systems
- Consumer electronics
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Obsolete | Pin Count ! | 3 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (Abs) (ID) | 1.8 A | Drain Current-Max (ID) | 1.8 A |
| Drain-source On Resistance-Max | 0.158 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-F3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.8 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Form ! | FLAT |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Manufacturer | Toshiba | Product Category ! | MOSFET |
| RoHS | N | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | UFM-3 |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Series | SSM3J108 | Brand | Toshiba |
| Height | 0.7 mm | Length | 2 mm |
| Product Type ! | MOSFET | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Width | 1.7 mm | Unit Weight | 0.000233 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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