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SSM3K104TU
General Purpose FET MOSFETSSM3K104TU
General Purpose FET MOSFET
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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SSM3K104TU DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SSM3K104TU is a P-channel MOSFET transistor designed for low-voltage applications in portable electronics and small signal switching circuits. It has a continuous drain current rating of 100 mA and a maximum drain-source voltage of -20V, making it suitable for small current applications where space and power efficiency are critical.This MOSFET has a low on-state resistance of 20 ohms, which helps minimize power loss and heat generation during operation. It also features a low gate threshold voltage of -0.45V, enabling it to be easily driven by low voltage signals.The SSM3K104TU is housed in a small SOT-723 package, measuring just 1.0mm x 0.6mm x 0.5mm, making it ideal for applications where space is limited. It is designed to operate over a wide temperature range from -55°C to 150°C, ensuring reliable performance in harsh operating conditions.
Key Features
- Low on-resistance (RDS(ON) = 1.7 ohm)
- Low gate threshold voltage (VGS(th) = 1.2V)
- Low input capacitance (Ciss = 37pF)
- Fast switching speed
- Small package (SOT-23)
- High continuous drain current (ID = 300mA)
- Low leakage current (IDSS = 100nA)
Application
- Portable electronics
- Battery-powered devices
- Small signal amplification circuits
- Electrical switches
- Automotive applications
- Power management systems
- LED lighting
- Voltage regulators
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | End Of Life | Pin Count ! | 3 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (Abs) (ID) | 3 A | Drain Current-Max (ID) | 3 A |
| Drain-source On Resistance-Max | 0.056 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 51 pF | JESD-30 Code | R-PDSO-F3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 0.8 W |
| Qualification Status ! | Not Qualified | Surface Mount ! | YES |
| Terminal Form ! | FLAT | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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