SSM6N58NU
Description: "Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP"SSM6N58NU
Description: "Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP"
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SSM6N58NU DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
SSM6N58NU is a N-channel enhancement mode power MOSFET manufactured by Samsung. It is designed for use in high-speed switching applications, making it suitable for power management in various electronic devices such as laptops, smartphones, and power supplies. This MOSFET features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 3.8A, making it well-suited for medium-power applications. It has a low on-state resistance (RDS(on)) of 0.1 ohms, which helps in reducing power losses and improving efficiency. SSM6N58NU is housed in a DFN2x2-6 package, which is compact and thermally efficient. The small footprint of the package saves space on the circuit board and allows for high power density designs. This MOSFET also boasts a fast switching speed, with a typical total gate charge (Qg) of 4.7nC. This ensures efficient switching performance and helps in reducing electromagnetic interference.
Key Features
- Power MOSFET with low on resistance
- Low leakage current
- High-speed switching performance
- High voltage rating of 100V
- TO-252-3 package
- Low gate charge
- Suitable for a wide range of applications
- RoHS compliant
Application
- Industrial automation
- Robotics
- Automotive systems
- Medical equipment
- Consumer electronics
- Power management
- Sensor interfaces
- Home appliances
- Renewable energy systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | UDFN-6 |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Series | SSM6N58 | Brand | Toshiba |
Configuration | Dual | Height | 0.75 mm |
Length | 2 mm | Product Type ! | MOSFET |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Width | 2 mm | Unit Weight | 0.000300 oz |
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