SSM6N815R,LF
SSM6N815R,LF - MOSFET with 103mΩ On-Resistance at 2A and 10V Power Dissipation of 1.8WSSM6N815R,LF
SSM6N815R,LF - MOSFET with 103mΩ On-Resistance at 2A and 10V Power Dissipation of 1.8W
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Quality Assurance
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SSM6N815R,LF DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $0.329 | $0.33 |
200 | $0.132 | $26.40 |
500 | $0.127 | $63.50 |
1000 | $0.125 | $125.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The SSM6N815R,LF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) electronic component with a 2N-CH (N-Channel) configuration, able to handle up to 100V and 2A of current. It comes in a compact 6TSOPF (Thin Small Outline Plastic Flat) package, making it suitable for use in various electronic applications where space efficiency is crucial. As an N-Channel MOSFET, the SSM6N815R,LF is designed to allow current flow between the source and drain terminals when a voltage is applied to the gate terminal. This makes it an essential component for switching and amplification in electronic circuits. With a voltage rating of 100V, it can handle moderate power requirements while the 2A current rating allows for efficient flow of electricity. The SSM6N815R,LF offers low ON resistance and fast switching speeds, making it ideal for applications such as power supplies, motor control, LED lighting, and battery management systems. Its compact size and high performance make it a versatile choice for designers looking to optimize space and power efficiency in their electronic designs.
Key Features
- High power density
- Wide temperature range
- Low thermal resistance
Application
- Construction machinery
- Gaming consoles
- Power distribution systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 2 A | Rds On - Drain-Source Resistance | 84 mOhms, 84 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 3.1 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 1.4 W |
Channel Mode | Enhancement | Tradename | U-MOSVIII-H |
Series | SSM6N815 | Brand | Toshiba |
Configuration | Dual | Forward Transconductance - Min | 4.8 S, 4.8 S |
Product Type ! | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Typical Turn-Off Delay Time | 21 ns, 21 ns | Typical Turn-On Delay Time | 7.5 ns, 7.5 ns |
Unit Weight | 0.000705 oz |
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