SUD50N04-8M8P-4GE3
Featuring a 40V voltage tolerance and a 14A current capacity, this N-channel MOSFET comes in a 3-pin DPAK packageSUD50N04-8M8P-4GE3
Featuring a 40V voltage tolerance and a 14A current capacity, this N-channel MOSFET comes in a 3-pin DPAK package
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Shipping & Payment
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Service & Packaging
Service & Packaging
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All Parts Extended Quality Guarantee
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SUD50N04-8M8P-4GE3 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $0.559 | $0.56 |
10 | $0.466 | $4.66 |
30 | $0.418 | $12.54 |
100 | $0.373 | $37.30 |
500 | $0.345 | $172.50 |
1000 | $0.329 | $329.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The SUD50N04-8M8P-4GE3 is a MOSFET transistor designed for N-channel operation with a continuous drain current of 50A and a drain source voltage of 40V. It has a low on-resistance of 6.9mohm and a power dissipation of 48.1W, making it suitable for high-current and high-power applications. The transistor is housed in a TO-252 case style with 3 pins, and has a maximum operating temperature range of -55°C to +150°C. It does not contain any SVHC (Substances of Very High Concern) as per the latest compliance update in June 2011. The maximum test voltage for the on-resistance is 10V, and the maximum gate-source voltage is 20V
![](/files/uploads/product/b/8124b669c8374eab92f2c6c1e9e65bc7.webp)
Key Features
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
- PWM Optimised
Application
- Power Management
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | DPAK-3 (TO-252-3) |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 50 A |
Rds On - Drain-Source Resistance | 8 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 37 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 48.1 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SUD |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 5 ns | Forward Transconductance - Min | 75 S |
Product Type ! | MOSFET | Rise Time ! | 5 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 40 ns |
Typical Turn-On Delay Time | 9 ns | Part # Aliases | SUD50N04-8M8P-4BE3 |
Unit Weight | 0.011640 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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