SUM110P04-05-E3

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375W high-power switching MOSFET

  • Manufacturer Part # : SUM110P04-05-E3

  • Package/Case: D2PAK-3 (TO-263-3)

  • Part Status : Active

  • Brand: Vishay

  • Product Categories : Single FETs, MOSFETs

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Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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SUM110P04-05-E3 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for SUM110P04-05-E3 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The SUM110P04-05-E3 is a powerful P-channel MOSFET designed for applications requiring high current and low on-resistance. With a drain-source voltage of -40V and a maximum current rating of 110A, this transistor is capable of handling high-power loads with ease. The on-resistance is rated at 4.1mohm with a test voltage of -10V, ensuring efficient power management and minimal heat dissipation

SUM110P04-05-E3

Key Features

  • The SUM110P04-05-E3 MOSFET features a voltage rating of -40V
  • Maximum continuous drain current of 110A for high power applications
  • Low on-resistance and high current handling make it ideal for power management

Application

  • Efficient battery protection
  • Highly versatile MOSFET
  • Enhanced power efficiency

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 110 A
Rds On - Drain-Source Resistance 5 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 185 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 175 C
Pd - Power Dissipation 375 W Channel Mode Enhancement
Tradename TrenchFET Series SUM
Brand Vishay Semiconductors Configuration Single
Fall Time 35 ns Forward Transconductance - Min 75 S
Height 4.83 mm Length 10.67 mm
Product Type ! MOSFET Rise Time ! 290 ns
Factory Pack Quantity 800 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 25 ns Width 9.65 mm
Unit Weight 0.139332 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SUM110P04-05-E3 PDF Download

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