SUM45N25-58-E3
N-MOSFET TransistorSUM45N25-58-E3
N-MOSFET Transistor
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SUM45N25-58-E3 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $2.958 | $2.96 |
200 | $1.145 | $229.00 |
500 | $1.104 | $552.00 |
800 | $1.085 | $868.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance PackageAPPLICATIONS • Primary Side Switch • Plasma Display Panel Sustainer Function
![SUM45N25-58-E3 SUM45N25-58-E3](/files/uploads/product/b/7a9da428-0150-4260-e0fb-08dbc6589f1f.webp)
Key Features
- TrenchFET® Power MOSFETS175 °C Junction TemperatureNew Low Thermal Resistance PackageAPPLICATIONSPrimary Side SwitchPlasma Display Panel Sustainer Function
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | D2PAK-3 (TO-263-3) |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 250 V | Id - Continuous Drain Current | 45 A |
Rds On - Drain-Source Resistance | 58 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 140 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
Pd - Power Dissipation | 375 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SUM |
Brand | Vishay / Siliconix | Configuration | Single |
Product Type ! | MOSFET | Factory Pack Quantity | 800 |
Subcategory | MOSFETs | Part # Aliases | SUM45N25-58 |
Unit Weight | 0.139332 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SUM45N25-58-E3?
The SUM45N25-58-E3 is a 250V, 45A N-channel enhancement mode power MOSFET designed by Vishay Siliconix. It is ideal for high-current, high-efficiency power switching applications such as power supplies, motor control, and inverters.
How Does SUM45N25-58-E3 Work?
The SUM45N25-58-E3 operates as a power switch, allowing or disallowing the flow of high currents based on the voltage applied to the gate terminal. When the gate-source voltage exceeds the threshold, the MOSFET turns on and conducts current between the drain and source, enabling power control and switching in various electronic circuits.
How Many Pins does SUM45N25-58-E3 have and What are the Functions of the Pinout Configuration?
The SUM45N25-58-E3 is housed in a TO-263 package. The pinout configuration includes:
- GATE: Gate control pin for turning the MOSFET on and off.
- DRAIN: Terminal for high-current carrying capability.
- SOURCE: Terminal connected to the ground or return path for the current.
What are the Pros and Cons of SUM45N25-58-E3?
Pros:
- High Current Capability: Designed to handle high continuous and pulsed currents for power applications.
- Low ON Resistance: Offers low conduction losses and high efficiency.
- Fast Switching Speed: Enables rapid power switching for improved system performance.
- TO-263 Package: Provides efficient heat dissipation and ease of mounting.
Cons:
- Threshold Voltage: Requires a sufficient gate-source voltage to achieve full conduction, which may affect drive circuit design.
- Gate Drive Consideration: Needs careful attention to gate drive voltage, current, and transient behavior for reliable operation.
Are There Any Equivalents/Alternatives to SUM45N25-58-E3 for Recommendation?
- The IRFP250N from Infineon is a similar N-channel power MOSFET suitable for high-current applications.
- Alternatives to the SUM45N25-58-E3 include the FDP7030BL from Fairchild Semiconductor and the STW45NM50 from STMicroelectronics.
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