Module Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
MIG75Q7CSB1X | Hybrid AC Motor Controller rated at 75A | TOSHIBA | 3~7 Days | 4,987 | ||
HWS600P-48 | Power supply unit generating 48 volts | TDK-LAMBDA | 3~7 Days | 7,840 | ||
RSD-100D-24 | Introduction: Meet the RSD-100D-24, an efficient DC-DC regulated power supply module engineered for consistent and accurate power delivery | Mean Well Usa Inc. | 3~7 Days | 6,066 | ||
IKCM30F60HA | AC Motor Controller | INFINEON | 3~7 Days | 5,872 | ||
PSS20S92E6-AG | Advanced technology for power management applications | MITSUBISHI | 3~7 Days | 7,179 | ||
2MBI300VN-120-50 | 300A Dual Diode IGBT Module, 1200V Voltage, V Series | FUJITSU | 3~7 Days | 3,756 | ||
1MBI400V-120-50 | IGBT with 480A Collector Current and 1200V Breakdown Voltage | FUJITSU | 3~7 Days | 6,040 | ||
UM150CDY-10 | UM150CDY-10 is a high-performance semiconductor chip used in various electronic devices for power management. | MITSUBISHI | 3~7 Days | 4,809 | ||
2MBI450VX-120-50 | IGBT 2MBI450VX-120-50 | FUJITSU | 3~7 Days | 3,599 | ||
2MBI200HH-120-50 | 200A and 1200V rating | FUJITSU | 3~7 Days | 4,553 | ||
SKIM304GD12T4D | Trench IGBT Modules SKIM304GD12T4D | SEMIKRON | 3~7 Days | 7,835 | ||
M57788MR | 430-450MHz Hybrid | MITSUBISHI | 3~7 Days | 5,499 | ||
M57737 | Hybrid design Narrow Band High Power Amplifier | MITSUBISHI | 3~7 Days | 5,764 | ||
PSS10S92E6-C | PSS10S92E6-C chip is a high-efficiency voltage regulator for automotive applications. | MITSUBISHI | 3~7 Days | 6,931 | ||
7MBP50RA120 | 100A AC Motor Controller featuring Hybrid technology | FUJITSU | 3~7 Days | 6,172 | ||
SKM75GB176D | IGBT Transistor Module N-channel 1700 Volts 80 Amps 7-pin D-61 Case | SEMIKRON | Active | 3~7 Days | 4,948 | |
SKIM400GD126DM | Insulated Gate Bipolar Transistor Module with N-Type Channel, 1200V Voltage Rating, and 330A Current Capacity | SEMIKRON | 3~7 Days | 5,051 | ||
STK4164MK2 | Product STK4164MK2 is a 35W audio amplifier with 2 channels and 2 functions | SANYO | 3~7 Days | 5,137 | ||
PFE500F-12 | AC-DC Regulated Power Supply Module | Tdk-Lambda Americas Inc | 3~7 Days | 6,802 | ||
LDA75F-24 | Power Modules Meeting ROHS Standards | Cosel Usa, Inc. | 3~7 Days | 4,921 | ||
2MBI600VD-060-50 | IGBT Module with Dual Diode Configuration, capable of handling 600A at 600V, part of the V Series | FUJITSU | 3~7 Days | 3,213 | ||
SEMIX603GB17E4P | SEMIX603GB17E4P, a POWER IGBT TRANSISTOR, is described in the following text | Semikron | 3~7 Days | 3,849 | ||
7MBR35SB120-50 | 7MBR35SB120-50 is a power module with high current capacity and voltage rating for industrial applications. | FUJITSU | 3~7 Days | 5,518 | ||
TL-M2ME1 | TL-M2ME1 is a proximity sensor with a switch-style design, featuring a 2mm detection range and NPN output with normally open functionality | Omron Automation And Safety | Discontinued | 3~7 Days | 5,092 | |
7MBR50NF060-10 | 7MBR50NF060-10 is a high power integrated module designed for industrial applications. | FUJITSU | 3~7 Days | 6,881 | ||
SKM400GAL124D | Featuring a current rating of 570A and a voltage breakdown capability of 1200V | SEMIKRON | 3~7 Days | 6,846 | ||
SKM150GB128D | SKM150GB128D is an IGBT module for power electronics applications. | SEMIKRON | 3~7 Days | 4,674 | ||
MG200J2YS50 | The MG200J2YS50 is a high-power N-channel insulated gate bipolar transistor designed for applications requiring robust performance | TOSHIBA | 3~7 Days | 6,312 | ||
SKM400GAL125D | 00A I(C) Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, CASE D57 | SEMIKRON | 3~7 Days | 4,208 | ||
SKM300GB063D | This product, SKM300GB063D, is an Insulated Gate Bipolar Transistor optimized for high-power scenarios | SEMIKRON | 3~7 Days | 6,033 | ||
T9AS1D12-15 | With a rating of 30 amps at 15 volts DC, T9AS1D12-15 serves as a dependable general-purpose relay, facilitating diverse electrical tasks | TE CONNECTIVITY/P&B | 3~7 Days | 5,342 | ||
2MBI450U4E-120 | MODULE-7 Insulated Gate Bipolar Transistor, N-Channel, with a maximum Collector Current of 675A and Breakdown Voltage of 1200V | FUJITSU | 3~7 Days | 7,637 | ||
SEMIX202GB12E4S | N-Channel Transistor with 16 PIN CASE SEMIX2S | SEMIKRON | 3~7 Days | 6,524 | ||
2MBI300U2B-060 | N-Channel Insulated Gate Bipolar Transistor housed in MODULE-7 package, featuring 300A Collector Current and 600V Breakdown Voltage | FUJITSU | 3~7 Days | 5,473 | ||
PS219A5-ASTX | Low po AC100V-240V three phase product PS219A5-ASTX | MITSUBISHI | 3~7 Days | 6,628 | ||
SKIIP13NAB065V1 | Insulated Gate Bipolar Transistor with 24A I(C) and 600V V(BR)CES, N-Channel, MINISKIIP 1, 24 PIN | SEMIKRON | 3~7 Days | 4,679 | ||
SKM200GAH123DKL | SKM200GAH123DKL is an IGBT power module for high power applications. | SEMIKRON | 3~7 Days | 3,018 | ||
SKM600GB126D | The SKM600GB126D is an Insulated Gate Bipolar Transistor (IGBT) optimized for high-power applications | SEMIKRON | 3~7 Days | 4,957 | ||
HFE1600-24 | Rack Mount Power Supplies 1608W 24V 67A | Tdk-Lambda Americas Inc | 3~7 Days | 3,050 | ||
CSNA111 | Board Mount Current Sensors Closed Loop 50A 1000 turn +/-70amp | Honeywell Aerospace | Active | 3~7 Days | 6,984 |
Additional Package/Case