TO-252 Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
NGD8201N | N-channel IGBT with 20A current rating and 435V voltage rating in CASE 369C-01 DPAK-3 | Onsemi | 3~7 Days | 7,342 | ||
PHD78NQ | PHD78NQ is a power MOSFET transistor ideal for automotive and industrial applications. | PHILIPS | 3~7 Days | 5,838 | ||
STD10PF06 | DPAK-packaged P-channel MOSFET transistor capable of handling 60V and 10A of current | STMicroelectronics | 3~7 Days | 4,716 | ||
KSH42C | 2C, PNP Epitaxial Silicon Transistor": | FAIRCHILD | 3~7 Days | 4,708 | ||
ATP113 | Positioned as a reliable option for general-purpose switching needs | Onsemi | 3~7 Days | 6,327 | ||
NGD8201AN | NGD8201AN is a high-performance, low-power audio amplifier chip for consumer electronics. | Onsemi | 3~7 Days | 3,877 | ||
FQD7P20 | DPAK-packaged Power MOSFET designed with P-Channel configuration, QFET® technology, and specifications of -200V, -5.7A, and 690 milliohms resistance | FAIRCHILD | 3~7 Days | 7,175 | ||
AOD424 | ROHS-compliant AOD424 MOSFET with a 20V rating, 4.4mΩ on-resistance at 20A, and 4.5V threshold voltage at 250uA packaged in TO-252 (DPAK) form | AOS | 3~7 Days | 5,475 | ||
2SK372 | 2SK372 Transistor | TOSHIBA | 3~7 Days | 6,962 | ||
KSH210 | Silicon Transistor | FAIRCHILD | 3~7 Days | 7,992 | ||
KSH41C | onsemi NPN transistor with a 6A and 100V rating in DPAK packaging | FAIRCHILD | 3~7 Days | 4,239 | ||
15N10G | The 15N10G chip is a high-performance, energy-efficient microprocessor for advanced computing applications. | UTC | 3~7 Days | 6,076 | ||
IRF3410 | IRF3410 is a power MOSFET transistor designed for high voltage applications. | INFINEON | 3~7 Days | 3,931 | ||
2SK2493 | General Purpose Power FET | TOSHIBA | 3~7 Days | 5,949 | ||
STU407D | STU407D is a powerful and versatile IC offering advanced control and interface capabilities. | STMicroelectronics | 3~7 Days | 4,992 | ||
NP52N06SLG | NP52N06SLG is an N-channel MOSFET chip designed for high efficiency power management applications. | Renesas Electronics | 3~7 Days | 6,228 | ||
STGD18N40LZ | STGD18N40LZ is a power MOSFET featuring low on-resistance and high current capability. | STMicroelectronics | 3~7 Days | 6,668 | ||
UTC78M05 | UTC | 3~7 Days | 3,619 | |||
RD3P200SN | isc N-Channel MOSFET Transistor | ROHM | 3~7 Days | 7,577 | ||
RD3P100SN | Nch 100V 10A Power MOSFET | ROHM | 3~7 Days | 3,309 | ||
RD3P175SN | MOSFET N-CH 100V 17.5A TO252 | ROHM | 3~7 Days | 4,155 | ||
RD3P050SN | Nch 100V 5A Power MOSFET | ROHM | 3~7 Days | 5,400 | ||
RD3H160SP | Pch -45V -16A Power MOSFET | ROHM | 3~7 Days | 7,441 | ||
RD3H045SP | Pch -45V -4.5A Power MOSFET | ROHM | 3~7 Days | 7,114 | ||
RD3H080SP | Pch -45V -8A Power MOSFET | ROHM | 3~7 Days | 4,805 | ||
STD20NF06L | 24A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | 3~7 Days | 3,338 | ||
STD12NF06L | 12A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | STMicroelectronics | 3~7 Days | 5,574 | ||
MTD3055V | Power MOSFET 12 Amps, 60 Volts N-Channel DPAK | Onsemi | Active | 3~7 Days | 6,662 | |
MC79M05 | 500 mA Negative Voltage Regulators | Onsemi | 3~7 Days | 3,157 | ||
FQD9N25 | Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | FAIRCHILD | 3~7 Days | 6,285 | ||
KIA78D33F | Fixed Positive LDO Regulator, 3.3V, 0.5V Dropout, BIPolar, PSSO2, DPAK-3 | KEC | 3~7 Days | 5,032 | ||
KA7805R | Fixed Positive Standard Regulator, 5VPSSO2, DPAK-3 | FAIRCHILD | 3~7 Days | 7,020 | ||
FDD6635 | N-Channel PowerTrench® MOSFET, 35V, 59A, 10mΩ, 2500-REEL | Onsemi | Obsolete | 3~7 Days | 5,746 | |
BA033CC0FP | Fixed Positive LDO Regulator, 3.3V, 0.5V Dropout, BIPolar, PSSO3, LEAD FREE, TO-252, 3 PIN | ROHM | 3~7 Days | 6,450 | ||
AOD413 | Transistor | AOS | 3~7 Days | 5,534 | ||
AMS1085CD | Adjustable Positive LDO Regulator, 1.25V Min, 13.7V Max, BIPolar, | AMS | 3~7 Days | 3,986 | ||
AMS1084CD | Resistor Network, Array Voltage Divider Through Hole 3 2 -55°C ~ 125°C ±0.01% | AMS | 3~7 Days | 3,186 | ||
BUK138-50DL | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | NXP | 3~7 Days | 4,224 | ||
APM2509N | N-Channel Enhancement Mode MOSFET | ANPEC | 3~7 Days | 5,533 | ||
APM2055N | N-Channel Enhancement Mode MOSFET | ANPEC | 3~7 Days | 6,091 |
Additional Package/Case