MRF171
RF MOSFET Transistors MRF171MRF171
RF MOSFET Transistors MRF171
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Manufacturer Part # : MRF171
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Package/Case: 211-07-3
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Brand: Advanced Semiconductor, Inc.
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Product Categories : RF FETs, MOSFETs
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MRF171 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The ASI MRF171 is a gold metallized N-Channel Enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 200 MHz.FEATURES: • PG = 12 dB min at 150 MHz • Omnigold™ Metalization System • 2 – 200 MHz operation
Key Features
- PG = 12 dB min at 150 MHz
- Omnigold™ Metalization System
- 2 – 200 MHz operation
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Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Active | Reach Compliance Code | |
ECCN Code | EAR99 | Configuration | SINGLE |
DS Breakdown Voltage-Min | 65 V | Drain Current-Max (Abs) (ID) | 4.5 A |
Drain Current-Max (ID) | 4.5 A | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | JESD-30 Code | O-CRFM-F4 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 200 °C |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | Package Shape | ROUND |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 115 W | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Form ! | FLAT |
Terminal Position | RADIAL | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MRF171?
The MRF171 is a high-frequency, high-power NPN bipolar junction transistor (BJT) designed for use in RF amplifier and oscillator applications. It is commonly used in high-power amplifiers for radio and television transmitters, as well as in industrial and scientific applications.
How Does MRF171 Work?
The MRF171 works by amplifying radio frequency signals with high power and efficiency. It leverages its high-frequency capability to amplify signals in the RF range, enabling the transmission of high-power radio signals across various applications. It is designed to handle high-voltage and high-current requirements typical of RF power amplification.
How Many Pins does MRF171 have and What are the Functions of the Pinout Configuration?
The MRF171 is housed in a 4-lead flange mount package. The pinout configuration includes:
- Emitter: The emitter pin, which is typically connected to the ground or chassis.
- Base: The base pin, which controls the transistor's switching or amplification action.
- Collector: The collector pin, which carries the output current from the transistor.
- Flange: The flange pin, used for mounting and thermal management.
What are the Pros and Cons of MRF171?
Pros:
- High Power: Capable of handling high power levels in RF applications.
- High Frequency: Designed for operation in the RF frequency range.
- Reliability: Provides reliable performance in high-power RF amplification systems.
- Industry Standard Package: The flange mount package allows for easy integration into existing designs.
Cons:
- Heat Dissipation: Due to high-power operation, effective heat management is essential for optimal performance.
- Matching Circuitry: May require additional matching circuits for impedance and power transfer optimization.
Are There Any Equivalents/Alternatives to MRF171 for Recommendation?
Some equivalents/alternatives to the MRF171 include:
- MRF173: another high-power RF transistor with similar characteristics.
- BLF278: a high-frequency power transistor suitable for RF power amplification.
- MRF21030: a high-power RF transistor designed for industrial, scientific, and broadcast applications.
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