2N6211
66 Tray Packaged PNP Transistor with 225V Voltage Rating, 2A Current Capacity, 3000mW Power Dissipation, Three Pins and Two Tabs2N6211
66 Tray Packaged PNP Transistor with 225V Voltage Rating, 2A Current Capacity, 3000mW Power Dissipation, Three Pins and Two Tabs
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2N6211 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $108.566 | $108.57 |
200 | $43.320 | $8,664.00 |
500 | $41.872 | $20,936.00 |
1000 | $41.156 | $41,156.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
2N6211 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This transistor is housed in a TO-66 package, which provides high power dissipation capabilities and is suitable for medium to high power applications. The maximum collector-base voltage of 2N6211 is 225V, with a continuous collector current rating of 2A. These specifications make this transistor suitable for use in a wide range of electronic circuits, including audio amplifiers, power supplies, and motor control applications. The 2N6211 features a low saturation voltage, which ensures efficient operation even at high current levels. This attribute makes it ideal for switching applications where minimizing power losses is crucial. Furthermore, the 2N6211 has a transition frequency of 30MHz, which indicates its ability to amplify signals with relatively high frequencies. This feature makes it suitable for use in radio frequency (RF) applications where signal amplification is required.
![2N6211 2N6211](/files/uploads/product/b/708bfebe-55b5-4306-2fa6-08dbc6589f1f.webp)
Key Features
- Bipolar PNP transistor
- Low power loss
- Complement to 2N6212
- Suitable for audio amplification and switching applications
- High current capability
- Low saturation voltage
- Fast switching speed
- High voltage rating
- TO-39 metal can package
Application
- Telecommunication systems
- Audio amplifiers
- Switching regulators
- Motor control circuits
- Power supplies
- High-speed switching applications
- Industrial control systems
- DC-DC converters
- Automotive electronics
- Lighting applications
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Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Microsemi | Product Category ! | RF Transistors (BJT) |
Mounting-Style | Through Hole | Configuration | Single |
Package-Case | TO-66-2 | Maximum Operating Temperature ! | + 200 C |
Collector-Emitter-Voltage-VCEO-Max | - 1.4 V | Transistor-Polarity | - 2 A |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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