2N3568
Boxed Product Development Kits for 2N3568 NPN Bipolar Transistor2N3568
Boxed Product Development Kits for 2N3568 NPN Bipolar Transistor
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2N3568 DataSheet
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Details
The 2N3568 is a general-purpose NPN bipolar junction transistor (BJT) commonly used in linear and switching applications. It has a maximum collector current (Ic) of 0.7A, a maximum collector-base voltage (Vcb) of 40V, and a maximum emitter-base voltage (Veb) of 6V.The 2N3568 has a typical DC current gain (hfe) of 30 to 100 at a collector current of 10mA, making it suitable for amplification purposes. It has a low saturation voltage of 0.3V at a collector current of 0.1A, which reduces power dissipation in switching applications.The transistor comes in TO-92 packaging, making it easy to mount on PCBs. It has a maximum power dissipation of 300mW and an operating temperature range of -55°C to 150°C, making it suitable for various environmental conditions.
Key Features
- Small Signal NPN Transistor
- Low power, high voltage applications
- Low noise figure
- Fast switching speed
- High current gain
- Low collector-emitter saturation voltage
- TO-92 package
Application
- RF amplification in high-frequency applications
- Signal amplification in audio amplifiers
- Switching applications in analog circuits
- Oscillator circuits in radio frequency transmitters and receivers
- Buffering and impedance matching in electronic circuits
- Amplification in instrumentation and control systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Reach Compliance Code | ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.5 A | Configuration | SINGLE |
DC Current Gain-Min (hFE) | 40 | JEDEC-95 Code | TO-105 |
JESD-609 Code | e0 | Number of Elements | 1 |
Operating Temperature-Max | 125 °C | Polarity/Channel Type | NPN |
Power Dissipation-Max (Abs) | 0.3 W | Qualification Status ! | Not Qualified |
Surface Mount ! | NO | Terminal Finish | TIN LEAD |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 60 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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