2N1303

Effective Inventory7,162

TO-5 Germanium PNP Transistor: Small Signal, 25V V(BR)CEO

  • Manufacturer Part # : 2N1303

  • Package/Case: CAN

  • Brand: MOTOROLA

  • Product Categories : Single Bipolar Transistors

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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2N1303 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for 2N1303 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The 2N1303 is a silicon PNP transistor designed for general-purpose switching and amplifier applications. It is manufactured with low power dissipation and high current capacity, making it suitable for a wide range of circuit designs.With a maximum collector-emitter voltage of 40V and a maximum collector current of 500mA, the 2N1303 can handle moderate power levels. It has a power dissipation of 625mW, allowing it to operate reliably without overheating under normal conditions.The transistor has a gain bandwidth product (ft) of 100MHz, indicating its ability to amplify signals with high frequency content. It has a transition frequency (fT) of 75MHz, meaning it can switch rapidly between on and off states.The 2N1303 is housed in a TO-39 package, which provides easy mounting and ensures good thermal conductivity for effective heat dissipation. It has three terminals - the emitter, base, and collector - arranged in a standard configuration for easy integration into circuit designs.

2N1303

Key Features

  • PNP silicon transistor
  • Low power amplifier and switching application
  • Complementary type to 2N3704
  • High current gain (hfe) of 80 to 300
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.3V
  • Maximum collector current (IC) of 600mA

Application

  • Amplification in audio circuits
  • RF amplification in radio frequency circuits
  • High-frequency oscillators
  • RF mixers and modulators
  • Signal processing in communication systems
  • Electronic switching circuits
  • Instrumentation amplifiers
  • Low Noise Amplifiers (LNA) for sensitive applications
  • General purpose amplifiers in various electronic devices
  • Input and output buffers for microcontrollers and microprocessors
MOTOROLA Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Contact Manufacturer Reach Compliance Code compliant
ECCN Code EAR99 Collector-Emitter Voltage-Max 25 V
Configuration SINGLE JEDEC-95 Code TO-5
JESD-30 Code O-MBCY-W3 Number of Elements 1
Number of Terminals 3 Package Body Material METAL
Package Shape ROUND Package Style CYLINDRICAL
Polarity/Channel Type PNP Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Form ! WIRE
Terminal Position BOTTOM Transistor Element Material GERMANIUM
Transition Frequency-Nom (fT) 3 MHz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2N1303 PDF Download

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