2N1303
TO-5 Germanium PNP Transistor: Small Signal, 25V V(BR)CEO2N1303
TO-5 Germanium PNP Transistor: Small Signal, 25V V(BR)CEO
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Manufacturer Part # : 2N1303
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Package/Case: CAN
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Brand: MOTOROLA
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Product Categories : Single Bipolar Transistors
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2N1303 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2N1303 is a silicon PNP transistor designed for general-purpose switching and amplifier applications. It is manufactured with low power dissipation and high current capacity, making it suitable for a wide range of circuit designs.With a maximum collector-emitter voltage of 40V and a maximum collector current of 500mA, the 2N1303 can handle moderate power levels. It has a power dissipation of 625mW, allowing it to operate reliably without overheating under normal conditions.The transistor has a gain bandwidth product (ft) of 100MHz, indicating its ability to amplify signals with high frequency content. It has a transition frequency (fT) of 75MHz, meaning it can switch rapidly between on and off states.The 2N1303 is housed in a TO-39 package, which provides easy mounting and ensures good thermal conductivity for effective heat dissipation. It has three terminals - the emitter, base, and collector - arranged in a standard configuration for easy integration into circuit designs.
![2N1303 2N1303](/files/uploads/product/b/4e67961f-979f-4bf5-6c0c-08dbc6589f1f.webp)
Key Features
- PNP silicon transistor
- Low power amplifier and switching application
- Complementary type to 2N3704
- High current gain (hfe) of 80 to 300
- Low collector-emitter saturation voltage (VCE(sat)) of 0.3V
- Maximum collector current (IC) of 600mA
Application
- Amplification in audio circuits
- RF amplification in radio frequency circuits
- High-frequency oscillators
- RF mixers and modulators
- Signal processing in communication systems
- Electronic switching circuits
- Instrumentation amplifiers
- Low Noise Amplifiers (LNA) for sensitive applications
- General purpose amplifiers in various electronic devices
- Input and output buffers for microcontrollers and microprocessors
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Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Contact Manufacturer | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Collector-Emitter Voltage-Max | 25 V |
Configuration | SINGLE | JEDEC-95 Code | TO-5 |
JESD-30 Code | O-MBCY-W3 | Number of Elements | 1 |
Number of Terminals | 3 | Package Body Material | METAL |
Package Shape | ROUND | Package Style | CYLINDRICAL |
Polarity/Channel Type | PNP | Qualification Status ! | Not Qualified |
Surface Mount ! | NO | Terminal Form ! | WIRE |
Terminal Position | BOTTOM | Transistor Element Material | GERMANIUM |
Transition Frequency-Nom (fT) | 3 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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