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2N4265
0.2A current rating2N4265
0.2A current rating
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Service & Packaging
Service & Packaging
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All Parts Extended Quality Guarantee
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2N4265 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2N4265 is an NPN silicon transistor designed for general-purpose amplification and switching applications. It features a maximum collector-base voltage of 30V, a maximum collector-emitter voltage of 20V, and a maximum emitter-base voltage of 5V. The transistor has a maximum collector current of 800mA and a power dissipation of 625mW.The 2N4265 has a gain of 100 to 300 and a transition frequency (ft) of 80MHz, making it suitable for use in high-frequency applications. It has a low noise figure, which makes it ideal for low-level amplification tasks.This transistor comes in a TO-92 package and offers high reliability and ruggedness. It is widely used in audio amplifiers, oscillators, switch mode power supplies, and other general-purpose circuits. The 2N4265 is compatible with standard industry assembly techniques and can be easily integrated into electronic circuits.
Key Features
- PNP silicon RF power transistor
- Designed for Class B, push-pull audio amplifier and output stage applications
- Low cross-over distortion
- High power gain
- High current gain
- Excellent linearity and high efficiency
- Low package collector capacitance
Application
- RF amplifiers
- Signal amplifiers
- Low power amplifiers
- Switching circuits
- RF oscillators
- Detector circuits
- Radio frequency applications
- Telecommunication devices
- Test and measurement equipment
- Electronic devices requiring high frequency operation
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | No | Part Life Cycle Code | Obsolete |
| Reach Compliance Code | ECCN Code | EAR99 | |
| HTS Code ! | 8541.29.00.75 | Collector Current-Max (IC) | 0.2 A |
| Collector-Base Capacitance-Max | 4 pF | Collector-Emitter Voltage-Max | 12 V |
| Configuration | SINGLE | DC Current Gain-Min (hFE) | 55 |
| JEDEC-95 Code | TO-92 | JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e0 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | ROUND |
| Package Style | CYLINDRICAL | Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 1 W | Power Dissipation-Max (Abs) | 0.31 W |
| Qualification Status ! | Not Qualified | Surface Mount ! | NO |
| Terminal Finish | TIN LEAD | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | BOTTOM | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 300 MHz |
| Turn-off Time-Max (toff) | 35 ns | Turn-on Time-Max (ton) | 25 ns |
| VCEsat-Max | 0.35 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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