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Specification Comparison: IRG4PC50FD vs IRG4PC50KD vs IRG4PC50UDPBF
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| Manufacturer | Infineon Technologies Ag | IR | Infineon Technologies |
| Package | TO-247AC-3 | TO-247 | TO247-3 |
| Description | 0 ampere collector current, 600 volt collector-source breakdown voltage, N-channel type, TO-247AC and TO-3P package with 3 pins | Featuring an N-channel design | Compact design enables dense packaging in demanding applications |
| Stock | 7263 | 7830 | 5544 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | Single |
| Rohs Code | No | No | |
| Part Life Cycle Code | Transferred | Transferred | |
| Part Package Code | TO-247AC | TO-247AC | |
| Pin Count | 2 | 2 | |
| Reach Compliance Code | compliant | compliant | |
| ECCN Code | EAR99 | EAR99 | |
| Additional Feature | ULTRA FAST SOFT RECOVERY | ULTRA FAST SOFT RECOVERY | |
| Case Connection | COLLECTOR | COLLECTOR | |
| Collector Current-Max (IC) | 70 A | 52 A | |
| Collector-Emitter Voltage-Max | 600 V | 600 V | |
| JEDEC-95 Code | TO-247AC | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | R-PSFM-T3 | |
| JESD-609 Code | e0 | e0 | |
| Number of Elements | 1 | 1 | |
| Number of Terminals | 3 | 3 | |
| Operating Temperature-Max | 150 °C | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | RECTANGULAR | |
| Package Style | FLANGE MOUNT | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | 104 W | |
| Qualification Status | Not Qualified | Not Qualified | |
| Surface Mount | NO | NO | |
| Terminal Finish | TIN LEAD | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | THROUGH-HOLE | |
| Terminal Position | SINGLE | SINGLE | |
| Transistor Application | POWER CONTROL | MOTOR CONTROL | |
| Transistor Element Material | SILICON | SILICON | |
| Turn-off Time-Nom (toff) | 660 ns | 430 ns | |
| Turn-on Time-Nom (ton) | 86 ns | 72 ns | |
| Fall Time-Max (tf) | 210 ns | ||
| Gate-Emitter Thr Voltage-Max | 6 V | ||
| Gate-Emitter Voltage-Max | 20 V | ||
| Peak Reflow Temperature (Cel) | 225 | ||
| Time@Peak Reflow Temperature-Max (s) | 30 | ||
| Product Category | IGBT Transistors | ||
| RoHS | Details | ||
| Technology | Si | ||
| Package / Case | TO-247-3 | ||
| Mounting Style | Through Hole | ||
| Collector- Emitter Voltage VCEO Max | 600 V | ||
| Collector-Emitter Saturation Voltage | 2 V | ||
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | ||
| Continuous Collector Current at 25 C | 55 A | ||
| Pd - Power Dissipation | 200 W | ||
| Minimum Operating Temperature | - 55 C | ||
| Brand | Infineon Technologies | ||
| Height | 20.7 mm | ||
| Length | 15.87 mm | ||
| Product Type | IGBT Transistors | ||
| Factory Pack Quantity | 400 | ||
| Subcategory | IGBTs | ||
| Width | 5.31 mm | ||
| Unit Weight | 1.340411 oz |
Part Number
Start with: IRG4P
Part Number "IRG4P" returned 20 results; all results matched and started with "IRG4P".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| IRG4PH50KD |
45A Insulated Gate Bipolar Transistor, 1200V N-Channel, TO-247AC |
Infineon Technologies Ag | TO-247AC | 3~7 Days | 6,580.00 | ||
| IRG4PH50S |
The IRG4PH50S is a high-performance IGBT chip with a N-channel design, capable of handling high voltages up to 1200V and currents up to 57A |
Infineon Technologies Ag | TO-247AC | 3~7 Days | 7,278.00 | ||
| IRG4PC50F |
Channel Insulated Gate Bipolar Transistor, 70A Collector Current, 600V Breakdown Voltage, TO-247AC, TO-3P Package, 3 Pin |
Infineon Technologies Ag | TO-247AC-3 | 3~7 Days | 7,146.00 | ||
| IRG4PC50WPBF |
TO247 IRG4PC50W IGBT 55A |
Infineon Technologies | TO247-3 | 3~7 Days | 4,300.00 | ||
| IRG4PC40KD |
IGBT IRG4PC40KD 42A TO247 |
Infineon Technologies Ag | TO-247AC | 3~7 Days | 3,986.00 | ||
| IRG4PSC71UD |
High Current N-Channel IGBT with 600V Voltage Rating |
Infineon Technologies | TO-274AA-3 | 3~7 Days | 5,444.00 | ||
| IRG4PH40KD |
This IGBT chip is designed for high voltage and current applications, providing reliable performance |
IR | TO-247 | 3~7 Days | 6,715.00 | ||
| IRG4PH40U |
N-channel insulated gate bipolar transistor (IGBT) chip with a voltage rating of 1200V |
IR | TO-3P | 3~7 Days | 4,022.00 | ||
| IRG4PH50SPBF |
1200V 57A 200W 3-Pin(3+Tab) |
Infineon Technologies | TO247-3 | 3~7 Days | 6,075.00 | ||
| IRG4PH40UPBF |
High Power IGBT Transistors with UltraFast Response Time up to 40kHz |
Infineon | TO247 | Obsolete | 3~7 Days | 6,988.00 | |
| IRG4PC50UPBF |
IRG4PC50UPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high power applications, featuring a 55A current rating in a TO-247 package |
Infineon Technologies | TO247-3 | 3~7 Days | 4,057.00 | ||
| IRG4PC40WPBF |
Warp Technology IGBT Transistors for Frequencies of 60-150kHz |
Infineon | TO247 | Active | 3~7 Days | 4,961.00 | |
| IRG4PC40UDPBF |
IGBT Transistors for high-frequency applications |
Infineon Technologies | TO247-3 | Obsolete | 3~7 Days | 5,684.00 | |
| IRG4PF50WPBF |
Infineon IRG4PF50WPBF IGBT Transistor |
Infineon | TO-247-3 | 3~7 Days | 4,017.00 | ||
| IRG4PC40S |
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN |
Infineon Technologies Ag | TO-247AC | 3~7 Days | 6,224.00 | ||
| IRG4PC30UD |
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN |
IR | TO-247 | 3~7 Days | 6,182.00 | ||
| IRG4PSH71KD |
Three-Pin TO-274AA Package |
Infineon Technologies | TO-274AA | OBSOLETE | 3~7 Days | 7,575.00 | |
| IRG4PSC71K |
N-Channel IGBT Chip with TO-274AA Packaging |
Infineon Technologies | TO-274AA | OBSOLETE | 3~7 Days | 6,253.00 | |
| IRG4PH40K |
TO-247AC Tube Trans IGBT Chip, N-CH 1200V 30A 160W 3-Pin(3+Tab) |
Infineon Technologies | TO-247-3 | OBSOLETE | 3~7 Days | 6,094.00 | |
| IRG4PH30KD |
IRG4PH30KD - IGBT |
Infineon Technologies | TO-247-3 | OBSOLETE | 3~7 Days | 8,313.00 |