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Specification Comparison: K4S281632O-LC75 vs K4S281632K-UC60 vs K4S281632K-UI75
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| Manufacturer | SAMSUNG | SAMSUNG | Samsung Semiconductor |
| Package | TSSOP | TSSOP54 | TSOP54 |
| Description | The K4S281632O-LC75 chip is a high-speed, low-power Synchronous Dynamic Random Access Memory (SDRAM) component used in various electronic devices | The K4S281632K-UC60 is a 128Mb Synchronous DRAM chip manufactured by Samsung | SDRAM module with fast 5.4ns speed |
| Stock | 5813 | 3286 | 6142 |
| Rohs Code | Yes | Yes | Yes |
| Part Life Cycle Code | Obsolete | Obsolete | Obsolete |
| Reach Compliance Code | compliant | ||
| ECCN Code | EAR99 | EAR99 | EAR99 |
| HTS Code | 8542.32.00.02 | 8542.32.00.02 | 8542.32.00.02 |
| Access Time-Max | 5.4 ns | 5 ns | 5.4 ns |
| Clock Frequency-Max (fCLK) | 133 MHz | 200 MHz | 133 MHz |
| I/O Type | COMMON | COMMON | COMMON |
| Interleaved Burst Length | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 Code | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 |
| Memory Density | 134217728 bit | 134217728 bit | 134217728 bit |
| Memory IC Type | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| Memory Width | 16 | 16 | 16 |
| Moisture Sensitivity Level | 3 | 3 | 3 |
| Number of Terminals | 54 | 54 | 54 |
| Number of Words | 8388608 words | 8388608 words | 8388608 words |
| Number of Words Code | 8000000 | 8000000 | 8000000 |
| Operating Temperature-Max | 85 °C | 70 °C | 85 °C |
| Operating Temperature-Min | -40 °C | ||
| Organization | 8MX16 | 8MX16 | 8MX16 |
| Output Characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Code | TSOP | TSOP2 | TSOP2 |
| Package Equivalence Code | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 |
| Power Supplies | 3.3 V | 3.3 V | 3.3 V |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified |
| Refresh Cycles | 4096 | 4096 | 4096 |
| Sequential Burst Length | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| Standby Current-Max | 0.002 A | 0.002 A | 0.002 A |
| Supply Current-Max | 0.06 mA | 0.22 mA | 0.2 mA |
| Supply Voltage-Nom (Vsup) | 3.3 V | 3.3 V | 3.3 V |
| Surface Mount | YES | YES | YES |
| Technology | CMOS | CMOS | CMOS |
| Temperature Grade | OTHER | COMMERCIAL | INDUSTRIAL |
| Terminal Form | GULL WING | GULL WING | GULL WING |
| Terminal Pitch | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal Position | DUAL | DUAL | DUAL |
| Pbfree Code | Yes | Yes | |
| Access Mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | |
| Additional Feature | AUTO/SELF REFRESH | AUTO/SELF REFRESH | |
| Length | 22.22 mm | 22.22 mm | |
| Number of Functions | 1 | 1 | |
| Number of Ports | 1 | 1 | |
| Operating Mode | SYNCHRONOUS | SYNCHRONOUS | |
| Seated Height-Max | 1.2 mm | 1.2 mm | |
| Self Refresh | YES | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | 3 V | |
| Width | 10.16 mm | 10.16 mm | |
| JESD-609 Code | e6 | ||
| Terminal Finish | TIN BISMUTH | ||
| Part Package Code | TSOP2 | ||
| Pin Count | 54 |
Part Number
Start with: K4S28
Part Number "K4S28" returned 20 results; all results matched and started with "K4S28".
| Part Number | Description | Brand | Package/Case | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|---|
| K4S281632K-UC75 |
Plastic TSOP Memory Module, 8M x 16 Configuration, 54 Pin SDRAM |
Samsung Semiconductor | TSSOP-54 | 3~7 Days | 3,967.00 | ||
| K4S280832K-UC75 |
The K4S280832K-UC75 is a memory chip, specifically a synchronous dynamic random-access memory (SDRAM) module |
SAMSUNG | TSOP54 | 3~7 Days | 3,145.00 | ||
| K4S281632F-TC75 |
Compact TSOP package with 0.80mm pitch and dimensions of 0.400 x 0.875 inch |
SAMSUNG | TSSOP-54 | 3~7 Days | 6,987.00 | ||
| K4S281633D-RN75 |
Package includes PBGA54 and CSP-54 |
SAMSUNG | BGA | 3~7 Days | 5,404.00 | ||
| K4S281632O-LC60 |
A high-capacity SDRAM integrated circuit designed with a 4x2MX16 memory array |
SAMSUNG | TSOP54 | 3~7 Days | 3,528.00 | ||
| K4S281632I-UC75 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 |
Samsung | 3~7 Days | 3,846.00 | |||
| K4S281632E-TC75 |
High-speed DRAM for memory-intensive applications with low power consumption |
Samsung Semiconductor | 3~7 Days | 3,550.00 | |||
| K4S281632O-LI75000 |
Reliable and fast SDRAM module for data-intensive projects |
Samsung Electronics | TSOP-II | 3~7 Days | 7,480.00 | ||
| K4S281632K-UC75000 |
The K4S28... part number references a specific type of SDRAM chip that offers excellent power consumption and data transfer rates |
Samsung Electronics | TSOP-II | 3~7 Days | 7,158.00 | ||
| K4S281632E-TC75000 |
Efficient and scalable SDRAM for next-generation computing |
Samsung Electronics | TSOP-II | 3~7 Days | 4,884.00 | ||
| K4S281632D-TC75000 |
Advanced SDRAM solution for high-performance systems, boasting 8M x 16-bit configuration and TSOP-II package |
Samsung Electronics | TSOP-II | 3~7 Days | 3,581.00 | ||
| K4S280432A-TC/L10 |
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SAMSUNG | TSSOP | 3~7 Days | 9,600.00 | ||
| K4S280432A-TC/L1H |
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SAMSUNG | TSSOP | 3~7 Days | 9,600.00 | ||
| K4S280432A-TC/L1L |
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SAMSUNG | TSSOP | 3~7 Days | 9,600.00 | ||
| K4S280432A-TC/L75 |
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SAMSUNG | TSSOP | 3~7 Days | 9,600.00 | ||
| K4S280432A-TC/L80 |
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SAMSUNG | TSSOP | 3~7 Days | 9,600.00 | ||
| K4S280432A-TC10 |
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SAMSUNG | TSOP | 3~7 Days | 9,516.00 | ||
| K4S280432A-TC1H |
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SAMSUNG | TSOP | 3~7 Days | 3,898.00 | ||
| K4S280432A-TC1L |
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SAMSUNG | TSOP | 3~7 Days | 8,000.00 | ||
| K4S280432A-TC80 |
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SAMSUNG | TSOP | 3~7 Days | 1,700.00 |