H5TQ1G63DFR-H9C

Name: H5TQ1G63DFR-H9C
Rating: 4.5 (10 reviews)

DDR DRAM, 64MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

6,551 Effective Inventory

H5TQ1G63DFR-H9C

Effective Inventory6,551

DDR DRAM, 64MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

Manufacturer Part # : H5TQ1G63DFR-H9C
Package/Case: BGA-96
Brand: SKHYNIX
Product Categories : Controllers

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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H5TQ1G63DFR-H9C DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for H5TQ1G63DFR-H9C or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

The H5TQ2G43CFR-xxC, H5TQ2G83CFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.FEATURES• VDD=VDDQ=1.5V +/- 0.075V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CK  transition• DM masks write data-in at the both rising and falling  edges of the data strobe• All addresses and control inputs except data,  data strobes and data masks latched on the  rising edges of the clock• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported• Programmable additive latency 0, CL-1, and CL-2  supported• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10• Programmable burst length 4/8 with both nibble  sequential and interleave mode• BL switch on the fly• 8banks• Average Refresh Cycle (Tcase of0 oC~ 95oC) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC• JEDEC standard 78ball FBGA(x4/x8)• Driver strength selected by EMRS• Dynamic On Die Termination supported• Asynchronous RESET pin supported• ZQ calibration supported• TDQS (Termination Data Strobe) supported (x8 only)• Write Levelization supported• 8 bit pre-fetch• This product in compliance with the RoHS directive.

Key Features

VDD=VDDQ=1.5V +/- 0.075V
Fully differential clock inputs (CK, CK) operation
Differential Data Strobe (DQS, DQS)
On chip DLL align DQ, DQS and DQS transition with CK 
transition
DM masks write data-in at the both rising and falling 
edges of the data strobe
All addresses and control inputs except data, 
data strobes and data masks latched on the 
rising edges of the clock
Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
and 14 supported
Programmable additive latency 0, CL-1, and CL-2 
supported
Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10
Programmable burst length 4/8 with both nibble 
sequential and interleave mode
BL switch on the fly
8banks
Average Refresh Cycle (Tcase of0 oC~ 95oC)
- 7.8 µs at 0oC ~ 85 oC
- 3.9 µs at 85oC ~ 95 oC
JEDEC standard 78ball FBGA(x4/x8)
Driver strength selected by EMRS
Dynamic On Die Termination supported
Asynchronous RESET pin supported
ZQ calibration supported
TDQS (Termination Data Strobe) supported (x8 only)
Write Levelization supported
8 bit pre-fetch
This product in compliance with the RoHS directive.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	Yes	Part Life Cycle Code	Obsolete
Part Package Code	BGA	Pin Count !	96
Reach Compliance Code		ECCN Code	EAR99
HTS Code !	8542.32.00.32	Access Mode !	MULTI BANK PAGE BURST
Additional Feature !	AUTO/SELF REFRESH	Clock Frequency-Max (fCLK)	667 MHz
I/O Type	COMMON	Interleaved Burst Length	4,8
JESD-30 Code	R-PBGA-B96	JESD-609 Code	e1
Length	13 mm	Memory Density	1073741824 bit
Memory IC Type	DDR3 DRAM	Memory Width	16
Number of Functions	1	Number of Ports !	1
Number of Terminals	96	Number of Words	67108864 words
Number of Words Code	64000000	Operating Mode !	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min
Organization	64MX16	Output Characteristics	3-STATE
Package Body Material	PLASTIC/EPOXY	Package Code	TFBGA
Package Equivalence Code	BGA96,9X16,32	Package Shape	RECTANGULAR
Package Style	GRID ARRAY, THIN PROFILE, FINE PITCH	Peak Reflow Temperature (Cel)	260
Power Supplies !	1.5 V	Qualification Status !	Not Qualified
Refresh Cycles	8192	Seated Height-Max	1.2 mm
Self Refresh	YES	Sequential Burst Length	4,8
Standby Current-Max	0.01 A	Supply Current-Max	0.2 mA
Supply Voltage-Max (Vsup)	1.575 V	Supply Voltage-Min (Vsup)	1.425 V
Supply Voltage-Nom (Vsup)	1.5 V	Surface Mount !	YES
Technology	CMOS	Temperature Grade !	OTHER
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)	Terminal Form !	BALL
Terminal Pitch !	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	20	Width	7.5 mm

Specification Comparison

H5TQ1G63EFR vs H5TQ1G63DFR-H9C vs H5TQ1G63BFR-12C H5TQ1G63EFR-PBC vs H5TQ1G63DFR-H9C vs H5TQ1G63BFR-12C

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification H5TQ1G63DFR-H9C PDF Download