Specification Comparison: H5TQ1G63EFR vs H5TQ1G63DFR-H9C vs H5TQ1G63BFR-12C

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Part Number
Manufacturer SKHYNIX SKHYNIX SKHYNIX
Package BGA BGA-96 BGA-96
Description H5TQ1G63EFR is a 3Gb LPDDR3 SDRAM chip with a speed of 1866 Mbps. DDR DRAM, 64MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Lead-free, environmentally friendly construction
Stock 3972 6551 5941
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Part Package Code BGA BGA
Pin Count 96 96
Reach Compliance Code compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 667 MHz 800 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B96 R-PBGA-B96
Length 13 mm 13 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR3 DRAM DDR3 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 96 96
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Organization 64MX16 64MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA96,9X16,32 BGA96,9X16,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Power Supplies 1.5 V 1.5 V
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 4,8 4,8
Standby Current-Max 0.01 A 0.025 A
Supply Current-Max 0.2 mA 0.42 mA
Supply Voltage-Max (Vsup) 1.575 V 1.575 V
Supply Voltage-Min (Vsup) 1.425 V 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V 1.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 7.5 mm 7.5 mm
JESD-609 Code e1
Peak Reflow Temperature (Cel) 260
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) 20
Access Time-Max 0.255 ns
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Part Number

Start with: H5TQ1

Part Number "H5TQ1" returned 20 results; all results matched and started with "H5TQ1".

Part Number Description Brand Package/Case Lifecycle Status Cargo cycle In Stock Operation
H5TQ1G83BFR-H9C

High-density DDR SDRAM module with 128 megabytes organized in an 18-bit configuration in a Fine-pitch Ball Grid Array package with 78 pins

SKHYNIX FBGA-78 3~7 Days 3,725.00
H5TQ1G83TFR-H9C

DDR dynamic random-access memory

SKHYNIX FBGA78 3~7 Days 5,798.00
H5TQ1G63EFR-PBC

Cutting-edge CMOS design for improved performance

SKHYNIX FBGA96 3~7 Days 4,531.00
H5TQ1G63BFR-H9C

FPBGA-96 technology

SKHYNIX FBGA-96 3~7 Days 6,060.00
H5TQ1G83TFR

H5TQ1G83TFR is a low-power, high-speed mobile memory chip for various electronic devices.

SKHYNIX BGA 3~7 Days 6,129.00
H5TQ1G83BFR

H5TQ1G83BFR is a high-speed, low-power mobile DRAM chip by SK Hynix, commonly used in smartphones.

SKHYNIX BGA 3~7 Days 4,614.00
H5TQ1G630FR

SKHYNIX BGA 3~7 Days 5,430.00
H5TQ1G63DFR-11C

High-density DDR DRAM module for industrial application

Sk Hynix Inc 3~7 Days 4,985.00
H5TQ163DFR-H9C

SKHYNIX 3~7 Days 4,912.00
H5TQ1G163BFR

SKHYNIX BGA 3~7 Days 1,993.00
H5TQ1G163BFR H9C

SKHYNIX BGA 3~7 Days 1,993.00
H5TQ1G163BFR-12C

SKHYNIX BGA 3~7 Days 252.00
H5TQ1G163DFR-12C

SKHYNIX BGA 3~7 Days 211.00
H5TQ1G43AFP-G7C

SKHYNIX BGA 3~7 Days 56.00
H5TQ1G43AFR-G7C

SKHYNIX FBGA 3~7 Days 2,500.00
H5TQ1G43AFR-H9C

SKHYNIX FBGA 3~7 Days 2,500.00
H5TQ1G43BFR-G7CC

SKHYNIX DDR3 256Mx4 PC1066 3~7 Days 960.00
H5TQ1G43BFR-H9C-C

SKHYNIX FBGA 3~7 Days 19,200.00
H5TQ1G43BFR-PAC

SKHYNIX FBGA 3~7 Days 571.00
H5TQ1G43BFR-PBC

SKHYNIX FBGA 3~7 Days 568.00