KSA812
Silicon PNP Transistor with 0.1A Collector Current and 50V Breakdown Voltage, 1-Element, SOT-23 PackageKSA812
Silicon PNP Transistor with 0.1A Collector Current and 50V Breakdown Voltage, 1-Element, SOT-23 Package
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Service & Packaging
Service & Packaging
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KSA812 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
KSA812 is a general-purpose PNP transistor that is commonly used in electronic circuits and projects. It belongs to the 2SA and 2SC series of transistors and is widely available in the market. The transistor is housed in a TO-92 package, which makes it suitable for through-hole mounting on PCBs. The KSA812 transistor has a maximum collector-base voltage of 20V and a collector current rating of 0.5A, making it suitable for low-power applications. It has a DC current gain (hFE) of 60 to 120 at a collector current of 100mA, which indicates its ability to amplify signals effectively. This transistor is commonly used in audio amplification circuits, voltage regulators, and other low-power switching applications. It is known for its low noise and high gain characteristics, making it a popular choice for many electronic designs. When using the KSA812 transistor in a circuit, it is important to refer to the datasheet for the specific characteristics and ratings to ensure proper operation and reliability.
Key Features
- Low Frequency Amplifier
- Collector-Base Voltage : VCBO = -60V
- Complement to KSC1623
Application
- Industrial automation
- Process control systems
- Robotics and mechatronics
- Energy management systems
- Building automation
- Automotive industry
- Aerospace industry
- Telecommunications
- Medical devices
- Security systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Obsolete | Part Package Code | SOT-23 |
Pin Count ! | 3 | Reach Compliance Code | |
ECCN Code | EAR99 | Collector Current-Max (IC) | 0.1 A |
Collector-Emitter Voltage-Max | 50 V | Configuration | SINGLE |
DC Current Gain-Min (hFE) | 90 | JESD-30 Code | R-PDSO-G3 |
Number of Elements | 1 | Number of Terminals | 3 |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Polarity/Channel Type | PNP |
Qualification Status ! | Not Qualified | Surface Mount ! | YES |
Terminal Form ! | GULL WING | Terminal Position | DUAL |
Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 180 MHz | Manufacturer | onsemi |
Product Category ! | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Package / Case | SOT-23 | Transistor Polarity | PNP |
Collector- Emitter Voltage VCEO Max | 50 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 5 V | Maximum DC Collector Current | 100 mA |
Pd - Power Dissipation | 150 mW | Gain Bandwidth Product fT | 180 MHz |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Series | KSA812 | Brand | onsemi / Fairchild |
Continuous Collector Current | 100 mA | DC Collector/Base Gain hfe Min | 90 |
DC Current Gain hFE Max | 600 | Height | 0.97 mm |
Length | 2.9 mm | Product Type ! | BJTs - Bipolar Transistors |
Subcategory | Transistors | Technology | Si |
Width | 1.3 mm | Unit Weight | 0.007090 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.