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KSE13009
Power Bipolar Transistor, NPN, Silicon, TO-220AB, Plastic/Epoxy, 12A I(C), 400V V(BR)CEO
KSE13009
Power Bipolar Transistor, NPN, Silicon, TO-220AB, Plastic/Epoxy, 12A I(C), 400V V(BR)CEO
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Service & Packaging
Service & Packaging
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KSE13009 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The KSE13009 is a NPN Silicon Power Transistor designed for high power applications. It has a maximum collector-to-emitter voltage of 700V and a continuous collector current of 12A.The transistor is housed in a TO-220 package which provides easy mounting and heat dissipation. It also has a low internal resistance which minimizes power loss and ensures high efficiency in power amplifier circuits.The KSE13009 is commonly used in audio amplifiers, power supplies, motor control applications, and other high power switching circuits. It is known for its high reliability and long-term stability, making it a popular choice for industrial and automotive applications.In terms of specifications, the KSE13009 has a typical gain of 10-80, a maximum transition frequency of 3 MHz, and a minimum hFE of 10 at a collector current of 1A. It has a low saturation voltage of 3V at a collector current of 6A, which helps in reducing power dissipation and improving efficiency.
Key Features
- High breakdown voltage
- Low saturation voltage
- High current capability
- Fast switching speed
- Low equivalent on-resistance
- High frequency capability
Application
- Power supplies
- Motor control
- Lighting systems
- Amplifiers
- Switching circuits
- Audio equipment
- Radio frequency applications
- Power management systems
- Power inverters
- Industrial control systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | Bipolar Transistors - BJT | RoHS | N |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | NPN | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 400 V | Collector- Base Voltage VCBO | 700 V |
| Emitter- Base Voltage VEBO | 9 V | Maximum DC Collector Current | 12 A |
| Pd - Power Dissipation | 100 W | Gain Bandwidth Product fT | 4 MHz |
| Minimum Operating Temperature | - 65 C | Maximum Operating Temperature ! | + 150 C |
| Brand | onsemi / Fairchild | DC Collector/Base Gain hfe Min | 8 |
| Height | 9.2 mm | Length | 9.9 mm |
| Product Type ! | BJTs - Bipolar Transistors | Subcategory | Transistors |
| Technology | Si | Width | 4.5 mm |
| Unit Weight | 0.080072 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is KSE13009?
The KSE13009 is a high-voltage NPN transistor designed for general-purpose amplifier and switching applications. It is commonly used in power supply circuits, audio amplifiers, and motor control circuits due to its high voltage and current capabilities.
How Does KSE13009 Work?
The KSE13009 works as a high-voltage NPN transistor, allowing it to amplify or switch high-power signals in various electronic circuits. It can handle high collector current and voltage, making it suitable for power applications. When biased properly, it can control the flow of current between its collector and emitter terminals.
How Many Pins does KSE13009 have and What are the Functions of the Pinout Configuration?
The KSE13009 is housed in a TO-220 package which typically has three pins: the collector, base, and emitter. The pinout configuration includes:
- Collector (C): This is the pin through which the output current flows from the transistor.
- Base (B): The base pin is used to control the flow of current from the collector to the emitter.
- Emitter (E): This is the pin through which the output current exits the transistor.
What are the Pros and Cons of KSE13009?
Pros:
- High Voltage Capability: Can withstand high collector-emitter voltage, making it suitable for high-power applications.
- High Current Capability: Capable of handling high collector current, allowing for power amplification and switching.
- Robust and Durable: TO-220 package provides mechanical ruggedness and ease of mounting.
Cons:
- Heat Dissipation: May require a heat sink for optimal thermal management, especially in high-power applications.
- Driver Circuitry: Requires proper base current control for efficient and safe operation in switching applications.
Are There Any Equivalents/Alternatives to KSE13009 for Recommendation?
Some equivalents to the KSE13009 include the MJE13009 from ON Semiconductor and the MJF13009 from Fairchild Semiconductor.
